• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.325-328
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• 2020

This paper demonstrated a voltage-controlled oscillator (VCO) using cost-effective (1-poly 6-metal) mixed signal standard CMOS process. To have the high-quality factor inductor in LC resonator with thin metal thickness, patterned-ground shields (PGS) was adopted under the spiral to effectively reduce the ac current of low resistive Si substrate. And, because of thin top-metal compared with that of RF option (2 ㎛), we make electrically connect between the top metal (M6) and the next metal (M5) by great number of via array along the metal traces. The circuit operated from 2.48 GHz to 2.62 GHz tuned by accumulation-mode varactor device. And the measured phase noise of LC VCO has -123.7 dBc/Hz at 1MHz offset at 2.62 GHz and the dc-power consumption shows 2.07 mW with 1.8V supply voltage, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.81-88
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• 2021

In this paper, by applying LTCC substrate, the library of the passive elements is implemented. And it can be used in 24 GHz circuits. Depending on how to use it to the circuit, it is required large value by designing the basic structures such as electrode capacitor and spiral inductor. However they are not available in high-frequency domain, because their SRF(Self-Resonant Frequency) is lower than the frequency of 24-GHz. By solving the limit, this paper devised passive elements classified for the DC and the high-frequency domain. The basic structure is suitable for low frequency under 1~2 GHz like DC. The microstrip λ/8 length stub structure is proposed to use for high-frequency like 24-GHz. The open and short stub structure operate as a capacitor and inductor respectively, also they have their impedances. Through their impedances, we can extract the value with the impedance-related equation. In this paper, the proposed passive elements are produced with the permittivity 7.5 LTCC substrate, the basic structure which are available in the DC constituted a library of capacitance of 2.35 to 30.44 pF and inductance of 0.75 to 5.45 nH, measured respectively. The stub structure available in the high-frequency domain were built libraries of capacitance of 0.44 to 2.89 pF and inductance of 0.71 to 1.56 nH, calculated respectively. The measurements have proven how to diversify value, so libraries can be built more variously. It will be an alternative to the passive elements that it is possible to integrate with the operation circuit of radar module for the frequency 24-GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.55-60
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• 2014

For an high speed communication, a 40GHz VCO was implemented using a 0.11um standard CMOS technology. The mm-wave VCO was designed by a LC type using a spiral inductor, and a simplified architecture with buffers and a smart biasing technique were used to get a high performance. The frequency range of the proposed VCO is 34~40GHz which is suitable for mm-Wave communication system. It has an output power of -16dBm and 16% tuning range. And the phase noise is -100.33dBc/Hz at 1MHz offset at 38GHz fundamental frequency. The total power consumption of VCO including PADs is 16.8mW with 1.2V supply voltage. The VCO achieves the FOMT of -183.8dBc/Hz which is better than previous VOCs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.114-124
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• 2011

In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.