• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.357-357
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• 2008

Spin injection experiment is conducted in epitaxially grown Fe/GaAs hybrid structure. For the formation of Schottky tunnel barrier between Fe and GaAs layers, highly n-doped GaAs layers are grown after n-doped channel layer. A non-local measurement, a voltage measurement probes do not contain a charge current path, is used for detecting only the chemical potential differences by the spin transport. As a result, the dips that are nicely matched with antiparallel region are obtained.

• Journal of Magnetics
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• v.18 no.1
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• pp.5-8
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• 2013

The perpendicular magnetic anisotropy of sputtered CoFeB thin films covered by MgO was investigated by vibrating sample magnetometry. Three different $Co_xFe_{80-x}B_{20}$ alloys were studied. Under out-of plane magnetic field, the saturation field was found to increase with increasing the Co content. The magnetization and interface anisotropy energy were obtained for all samples. Both showed a marked dependence on the MgO overlayer thickness. In addition, their variations were found to be non-monotonous as a function of the Co concentration.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.18.2-18.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.204.2-204.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.12a
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• pp.110-111
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.66.2-66.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.199.2-199.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.91-91
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• 2009

• Journal of Magnetics
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• v.12 no.4
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• pp.152-155
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• 2007

Spin dependent transport was investigated in lateral $Py(Ni_{81}Fe_{19})/Au/Py$ spin valve devices. Clear spin valve effect was observed in conventional four-terminal measurement geometry. Higher resistance was found in antiparallel magnetization field of two Py electrodes which is determined by anisotropy magnetoresistance (AMR) measurements. The rectangular shape of spin signal together with good agreement of switching field convinces observed spin valve signal is resulted from effective spin injection and detection. The magnetoresistance ratio decays exponentially with channel length by which spin diffusion length of Au channel was estimated to be 76 nm.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.67-76
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• 2011

Semiconductor spintronics is an emerging interdisciplinary technology based on the electron spin degree of freedom, combining the magnetic materials and semiconductors. The spin transistor represents a novel semiconductor device, in which the electron spin is injected, manipulated, and detected, and thereby a memory function and data processing function are enabled in one device. Particularly, the spin transistor based on Silicon, the mainstream semiconductor, might have a significant impact on information technology. This review introduces the major progresses of Silicon spintronics in recent years, and describes the technical issues for the future.