• 제목/요약/키워드: spin-polarized tunneling

검색결과 15건 처리시간 0.012초

Effect of spin-polarized current injection on pair tunneling properties of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ intrinsic Josephson junctions

  • Shin, Ho-Seop;Lee, Hu-Jong;Do Bang;Nguyen Khac Mac
    • Progress in Superconductivity
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    • 제5권1호
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    • pp.5-8
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    • 2003
  • We studied the effect of spin injection on tunneling conduction properties of intrinsic Josephson junctions formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals. properties of an identical stack (10${\times}$5.0${\times}$0.030 $\mu\textrm{m}^3$) of intrinsic Josephson junctions were compared for the bias current injected through Au and Co electrodes. The suppression of the superconducting gap in the $_2$ double layers and the interlayer Josephson critical current was manifested in the tunneling current-voltage characteristics of the stacks. This effect appears to be caused by the pair breaking associated with spin-polarized carriers injected from the Co electrode into the $Bi_2$$Sr_2$$_2$O$CaCu_{ 8+x}$ single crystal. This study may provide valuable information on clarifying the mechanism of high- $T_{c}$ superconductivity.y.y.

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Electromagnetic Resonant Tunneling System: Double-Magnetic Barriers

  • Kim, Nammee
    • Applied Science and Convergence Technology
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    • 제23권3호
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    • pp.128-133
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    • 2014
  • We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

Giant interlayer tunneling magnetoresistance in layered manganite

  • Won, C.J.;Yang, J.J.;Cheong, S.W.;Hur, N.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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    • pp.156-157
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    • 2015
  • we have presented the enhanced interlayer tunneling magnetoresistance in doped $La_{1+2x}Sr_{2-2x}Mn_2O_7$ single crystal below $T_C$. The drastically out-of-plane magnetoresistance observed in magnetic fields perpendicular to the bilayers indicates that spin-polarized magnetic layers in single crystal show as a stack of ordered spin valve.

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Co1-xFex와 Co1-xMnx 강자성 전이 합금 박막의 자기 모멘트와 터널 접합에 의한 스핀 편극치의 상관관계 연구 (The correlation between Spin Polarized Tunneling and Magnetic Moment in Co-Mn and Co-Fe Alloy Films)

  • 최등장;장은영;이년종;김태희
    • 한국자기학회지
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    • 제17권5호
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    • pp.194-197
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    • 2007
  • 극초진공 하에서 제작한 다양한 전이자성합금 박막에 대해 (Co-Fe, Co-Mn) 그 자기적 특성과 함께 Meservey-Tedrow 방식으로 측정한 스핀 편극치를 비교 분석 하였다. 약 20 nm 두께의 제작된 시료들은 표면 효과가 우세하리라는 기대와는 반대로 거의 벌크와 유사한 자기적 특성을 보였다. CoFe 또는 NiFe의 경우와는 달리 CoMn 경우 즉 강자성과 반자성 금속의 합금의 경우, 그 스핀 편극치가 그 자기모멘트에 의존하는 경향을 관찰 하였다. 이는 페르미 에너지 준위에서 터널링 현상에 대해 중요한 역할을 하는 sp-편력전자들과 고립되어 있는 d-전자 간의 교환상호작용(exchange interaction)에 의한 영향으로 이해할 수 있다.

Low Temperature Properties of Exchange-biased Magnetic Tunnel Junction

  • Lee, K. I.;J. G. Ha;S. Y. Bae;K. H. Shin
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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    • pp.325-326
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    • 2000
  • Low temperature diagnosis was performed as a probe for the integrity of MTJ(Magnetic tunnel junction) process which is optimised for the given plasma oxidation condition. TMR ratio increased slowly with decreasing temperature than that expected from spin wave exitation theory〔1〕. Junction resistance (RJ) does not follow T$\^$-$\frac{1}{2}$/ law below 200 K, indicating another conduction path besides spin polarized tunneling is involved at low temperature. Temperature dependence of conductance dip and bias dependence of TMR with temperature are discussed, from which the quality of tunnel barrier and its formation process can be inferred.

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Interface Engineering in Quasi-Magnetic Tunnel Junctions with an Organic Barrier

  • Choi, Deung-Jang;Lee, Nyun-Jong;Kim, Tae-Hee
    • Journal of Magnetics
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    • 제15권4호
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    • pp.185-189
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    • 2010
  • Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

Ga 극초박막의 계면특성과 초전도 물성제어에 대한 연구 (Interface Engineering in Superconducting Ultra-thin Film of Ga)

  • 이년종;김태희
    • 한국자기학회지
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    • 제20권6호
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    • pp.212-215
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    • 2010
  • 비정질 Ga 박막은 벌크에 비해 높은 초전도 임계온도와 임계자기장 값을 보이나 그 특성은 불안정하여 상온에 한번 노출되면 그 초전도 특성을 잃어버리게 된다. 이 논문에서는 Ga/Al 두층 박막을 제작하여 이러한 비정질 Ga 박막의 불안정한 초전도 특성을 개선할 뿐만 아니라 기존의 스핀검출에 응용되고 있는 Al 박막을 대체할 수 있는 가능성을 연구하였다. 극초진공 분자빔박막 증착장비(UHV-MBE)를 사용하여 Ga/Al 두층 박막을 제작하고, 표면의 적절한 플라즈마 산화 처리에 의한 Ga/Al/$Al_2O_3$/Fe의 터널 접합구조를 제작하여 Ga/Al 박막의 초전도 특성을 측정하였다. 한편, Ga/Al 박막의 표면 특성은 Auger 전자 분광기를 이용하여 분석하였다.

Andreev Reflection in Metal- and Ferromagnet-d-wave Superconductor Tunnel Junctions

  • Kim, Sun-Mi;Lee, Kie-Jin;Hwang, Yun-Seok;Cha, Deok-Joon;Ishibashid, Takayuki
    • Progress in Superconductivity
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    • 제2권1호
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    • pp.43-46
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    • 2000
  • We report on the tunneling spectroscopy of tunnel junctions using d-wave superconductor in relation to Andreev reflection. The zero bias conductance peak (ZBCP) which has maximum on [110] direction of ab-plane is observed on metal $Au/YBa_2Cu_3O_y$ tunnel junctions while it is suppressed on the ferromagnetic $Co/Au/YBa_2Cu_3O_y$ tunnel junctions. The effects of Andreev reflection on the differential conductance of each junction are dependent on the tunnel direction. For the $Co/Au/YBa_2Cu_3O_y$ junction, the suppression of Andreev reflection takes place by spin-polarized quasiparticles tunneling from a ferromagnetic material to a d-wave superconductor. By comparing these experimental results with recent theoretical works on Andreev reflection, the existence of Andreev bound state due to the d-wave symmetry of the pair potential is verified in high-$T_c$ superconductor.

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