• Title/Summary/Keyword: spin transition

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The LS$\rightarrow$HS Transition of Cobalt(III) in an Oxygen Lattice with the $K_2NiF_4$-Type Structure: Correlations with the Chemical Bonding Environment of the $(CoO_6)$ Octahedron Along the c-axis

  • Byeon, Song-Ho;Demazeau, Gerard
    • Bulletin of the Korean Chemical Society
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    • v.15 no.11
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    • pp.949-953
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    • 1994
  • In oxides characterized by the $K_2NiF_4-type$ structure, the low-spin${\to}$high-spin transition of trivalent cobalt ion was studied in function of the nature of competing bonds in the perovskite-plane and along the c-axis. Using Slichter and Drickamer's model the calculated values of parameters characterizing such a transition are correlated with the covalency of competing bonds along the c-axis of the $K_2NiF_4$-structure and the local structural distortion of the $(CoO_6)$ octahedron.

Strain induced/enhanced ferromagnetism in $Mn_3Ge_2$thinfilms

  • Dung, Dang Duc;Feng, Wuwei;Thiet, Duong Van;Sin, Yu-Ri-Mi;Jo, Seong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.135-135
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    • 2010
  • In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

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Electronic and magnetic structure calculations of $La_2MnFeO_6$ with double perovskite oxide (이중 페로브스카이트 구조 $La_2MnFeO_6$의 전자구조와 자기구조 계산)

  • 박기택
    • Journal of the Korean Magnetics Society
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    • v.10 no.3
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    • pp.139-142
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    • 2000
  • We present results based on FLAPW local spin density(LSD) calculations of double perovskite structure oxide L $a_2$MnFe $O_{6}$ . The total energy calculations with various spin structures show that this material has a stable ferromagnetic spin configuration. The ionic state of transition metals depend on the spin configuration $_Mn^{4+}$ and F $e^{2+}$ for ferromagnetic structure, M $n^{3+}$ and F $e^{3+}$ for ferrimagnetic structure). It is explained by super exchange interaction between transition metals. The calculated magnetic structure is well matched with recent experimental result.ult.t.

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Effect of Modified Starches on Caking Inhibition in Ramen Soup

  • Wee, Hye-Won;Choi, Young-Jin;Chung, Myong-Soo
    • Food Science and Biotechnology
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    • v.16 no.4
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    • pp.646-649
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    • 2007
  • The effect of the addition of 2 kinds of chemically modified starches (the anti-caking agents; tapioca starch and com starch) on caking of ramen soup was observed using a low-resolution proton-pulsed nuclear magnetic resonance (NMR) technique. After storing ramen soup samples with diverse compositions of modified starch at 20-40% relative humidity for 4 weeks, changes in the spin-spin relaxation time constant ($T_2$) were measured as a function of temperature. $T_2-Temperature$ curves for ramen soup containing modified starches showed that the caking initiation temperature (glass transition temperature) was increased by $5^{\circ}C$ following the addition of only 0.5% modified cornstarch. The results indicate that the modified com starch used in this study would be an effective anti-caking agent for ramen soup, thus prolonging the shelf life of the product.

Spin-Flop of α-Fe2O3 Nano Particles (α-Fe2O3 나노 입자에서 Spin-Flop에 관한 연구)

  • Sur, Jung-Chul;Park, Chul-Jin;Choi, Jung-Wan;Gee, S.H.;Hong, Y.K.
    • Journal of the Korean Magnetics Society
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    • v.14 no.5
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    • pp.169-173
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    • 2004
  • We have synthesized monodispersed $\alpha$-F $e_2$ $O_3$ nano particles to investigate the spin change during the Morin transition temperature( $T_{M}$). The particle size was founded to have a very uniform distribution of 80 nm by x-ray diffraction and size dispersion analyzer. The Mossbauer spectra between the 4.2 K and the room temperature show that $T_{M}$ was shifted and the spin states of Fe ion were changed with the particle size. The Morin transition temperature of bulk usually quoted in literature is 265 K but, it decreases with the size and no transition was found at the critical size down to 4.2K. The spin direction of 80 nm sized particles are normal to the hexagonal c-axis above the $T_{M}$ and are tilted about 28~29$^{\circ}$ below $T_{M}$, which is the [110] direction of rombohedral structure.

Ordering of manganese spins in photoconducting $Zn_{1-x}Mn_xTe$

  • Kajitani, T.;Kamiya, T.;Sato, K.;Shamoto, S.;Ono, Y.;Sato, T.;Oka, Y.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.39-43
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    • 1998
  • Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

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Synthesis of the Ni-doped ternary compound Ba(Fe1-xNix)2Se3

  • Park, Hyeon Beom;Shin, Soohyeon;Jung, Soon-Gil;Hwang, Doyeon;Lee, Hyoyoung;Park, Tuson
    • Progress in Superconductivity and Cryogenics
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    • v.17 no.4
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    • pp.30-33
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    • 2015
  • We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

Ferromagnetic Heterostructures based on Semiconductors

  • Tanaka, M.;Sugahara, S.;Nazmul, A.M.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.262-262
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    • 2003
  • Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

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SPIN POLARIZED PHOTOEMISSION AND MAGNETIC CIRCULAY DICHROISM STUDY OF FeAl THIN FILMS

  • Kim, K.W.;Kudryavtsev, Y.V.;Chang, G.S.;Whang, C.N.;Lee, Y.P.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.53-58
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    • 1997
  • It is well known that the equiatomic FeAl alloy crystallizes in a paramagnetic CsCl structure and is very stable in a wide temperature range owing to a significant charge transfer from Al to Fe. A presence of structural defects normally enhances the magnetic and magneto-optical properties of this alloy. In this study spin-resolved photoemission and magnetic circular dichroism (MCD) were carried out on both ordered and disordered $Fe_{0.52}Al_{0.48}$ alloy films. The disordered state in the alloy films was obtained by a vapor quenching deposition on cooled substrates. It is shown that the order-disorder transition in the Fe0.52Al0.48 alloy films leads to a significant change in the spin polarization. Form the MCD results the orbital and spin magnetic moments of the constituent atoms are obtained. According to the sum rule the spin and orbital magnetic moments of Fe in the disordered FeAl film are $\mu\frac{SR}{spin}=0.8\mu_B$ and $\mu\frac{SR}{orb}=0.14\mu_B$ respectively. The spin magnetic moment is also evaluated to be $\mu\frac{BR}{spin}=0.77\mu_B$ by the branching ration method employing a photon polarization of 90%.

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