• Bulletin of the Korean Chemical Society
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• 제15권11호
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• pp.949-953
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• 1994

In oxides characterized by the $K_2NiF_4-type$ structure, the low-spin${\to}$high-spin transition of trivalent cobalt ion was studied in function of the nature of competing bonds in the perovskite-plane and along the c-axis. Using Slichter and Drickamer's model the calculated values of parameters characterizing such a transition are correlated with the covalency of competing bonds along the c-axis of the $K_2NiF_4$-structure and the local structural distortion of the $(CoO_6)$ octahedron.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• 한국자기학회지
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• 제10권3호
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• pp.139-142
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• 2000

이중 perovskite구조를 가진 전이금속 산화물 L $a_2$MnFe $O_{6}$ 기본 전자구조를 범밀도 함수법을 기초로 한 국소밀도 근사를 이용한 FLAPW방법으로 계산하였다. 여러 자성 구조의 전에너지 계산은 이 물질이 강자성 구조가 반강자성 구조보다 안정됨을 보여 주었다. 각 전이금속의 이온 상태는 자성 구조에 따라 달라짐을 보였다(강자성 $_Mn^{4+}$ , F $e^{2+}$ 준강자성 $_Mn^{3+}$ , F $e^{3+}$ ). 이것은 전이금속 사이의 초교환작용 이론으로 잘 설명되었고 계산 결과는 최근의 실험과 일치 하였다.

• Food Science and Biotechnology
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• 제16권4호
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• pp.646-649
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• 2007

The effect of the addition of 2 kinds of chemically modified starches (the anti-caking agents; tapioca starch and com starch) on caking of ramen soup was observed using a low-resolution proton-pulsed nuclear magnetic resonance (NMR) technique. After storing ramen soup samples with diverse compositions of modified starch at 20-40% relative humidity for 4 weeks, changes in the spin-spin relaxation time constant ($T_2$) were measured as a function of temperature. $T_2-Temperature$ curves for ramen soup containing modified starches showed that the caking initiation temperature (glass transition temperature) was increased by $5^{\circ}C$ following the addition of only 0.5% modified cornstarch. The results indicate that the modified com starch used in this study would be an effective anti-caking agent for ramen soup, thus prolonging the shelf life of the product.

• 한국자기학회지
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• 제14권5호
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• pp.169-173
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• 2004

$\alpha$-F $e_2$ $O_3$, 나노 입자를 균일한 크기로 제조하여 Morin 전이 온도( $T_{M}$)를 전 후로 스핀의 변화에 관하여 연구하였다. X-선 회절 분석과 입도분포 측정을 통하여 입자는 80nm정도의 매우 군일한 크기 분포를 하고 있음을 확인하였다. Mossbauer 분광기를 통하여 4.2K에서부터 실내온도까지 여러 온도 범위에 걸쳐 측정한 결과 입자의 크기에 따라 $T_{M}$온도가 변화되었고 스핀의 상태 역시 달라졌다. $T_{M}$은 $b_{ulk}$상태에서 265 K의 값을 가지고 있으나 입자의 크기가 작아질수록 낮아지고, 임계 크기 이하에서는 전이가 전혀 일어나지 않는다. 80nm크기의 입자에서, 스핀의 방향은 $T_{M}$ 이상의 온도에서는 정상적으로 hexagonal구조의 c축에 90$^{\circ}$ 이루고 있으나 $T_{M}$ 이하의 온도에서는 c 축에 나란하지 않고 일정한 각(28$^{\circ}$～29$^{\circ}$)을 유지하는데, 이 방향은 rhombohedral구조의 [110]에 해당하는 것으로 지금까지 알려진 0$^{\circ}$와 90$^{\circ}$사이의 스핀 전이와는 다른 모습을 보여주고 있다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.39-43
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• 1998

Single crystals of{{{{ { Zn}_{ 1-x} {Mn }_{x }{Te} }}}} with x=0.3-0.6 were prepared by the standard Bridgeman method. Diffuse neutron diffraction intensities due to the short range magnetic ordering is found in the vicinities of 1 1/2 0 reciprocal point and its equivalent point, indicating that the magnetic correlation of the clusters is the type III antiferromangetic one do the F-type Bravais class crystals, being identical with that of {{{{{ Cd}_{ 1-x} {Mn }_{x }Te }}}}. Neutron inelastic scattering measure-ment has been performed for {{{{{ Zn}_{ 0.6} { Mn}_{ 0.4}Te }}}} sample using the cold neutron spectrometer. AGNES. High resolution measurement with the energy resolution of {{{{ TRIANGLE E= +- .01meV}}}} was carried out in the temperature range from 10K to the ambient. Critical scattering, closely related with the spin glass transition, has been observed for the first time in this semimagnetic semi-conductor. The critical scattering is observed at temperatures in the vicinity of the spin glass transition temperature, 17K. The scattering is observed as a kind of quasielastic scattering in the reciprocal range where the elastic magnetic diffuse scattering has been observed, e.g., 11/20 reciprocal point, indicating the spin fluctuation has dynamic components in this material. Photoconductivity has been discovered below 150K in {{{{{ Zn}_{ 0.4} {Mn }_{0.6 } Te}}}}. The electric AC conductivity has been increased dramatically under the laser light with the wave lengths of {{{{ lambda =6328,5145 and4880 }}}}$\AA$ ,respectively. After the light was darkened, the conductivity was reduced to the original level after about 2000 seconds at 50K, being above the spin glass transition temperature. This phenomenon is the typical persistent photoconductivity; PPC which was similarly found in {{{{ { Zn}_{ 1-x} { Mn}_{x} Te}}}}.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.30-33
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• 2015

We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.4-4
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.262-262
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• 2003

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

• 한국진공학회지
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• 제6권S1호
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• pp.53-58
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• 1997

It is well known that the equiatomic FeAl alloy crystallizes in a paramagnetic CsCl structure and is very stable in a wide temperature range owing to a significant charge transfer from Al to Fe. A presence of structural defects normally enhances the magnetic and magneto-optical properties of this alloy. In this study spin-resolved photoemission and magnetic circular dichroism (MCD) were carried out on both ordered and disordered $Fe_{0.52}Al_{0.48}$ alloy films. The disordered state in the alloy films was obtained by a vapor quenching deposition on cooled substrates. It is shown that the order-disorder transition in the Fe0.52Al0.48 alloy films leads to a significant change in the spin polarization. Form the MCD results the orbital and spin magnetic moments of the constituent atoms are obtained. According to the sum rule the spin and orbital magnetic moments of Fe in the disordered FeAl film are $\mu\frac{SR}{spin}=0.8\mu_B$ and $\mu\frac{SR}{orb}=0.14\mu_B$ respectively. The spin magnetic moment is also evaluated to be $\mu\frac{BR}{spin}=0.77\mu_B$ by the branching ration method employing a photon polarization of 90%.