• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Journal of Magnetics
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• v.14 no.2
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• pp.53-61
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• 2009

Herein, different concepts for domain wall propagation based on currents and fields that could potentially be used in magnetic data storage devices based on domains and domain walls are reviewed. By direct imaging, we show that vortex and transverse walls can be displaced using currents due to the spin transfer torque effect. For the case of field-induced wall motion, particular attention is paid to the influence of localized fields and local heating on the depinning and propagation of domain walls. Using an Au nanowire adjacent to a permalloy structure with a domain wall, the depinning field of the wall, when current pulses are injected into the Au nanowire, was studied. The current pulse drastically modified the depinning field, which depended on the interplay between the externally applied field direction and polarity of the current, leading subsequently to an Oersted field and heating of the permalloy at the interface with the Au wire. Placing the domain wall at various distances from the Au wire and studying different wall propagation directions, the range of Joule heating and Oersted field was determined; both effects could be separated. Approaches beyond conventional field- and current-induced wall displacement are briefly discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.61.2-61.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.62-62
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.78-79
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• 2015

We investigate the switching current for various cell diameters and DM interaction. We find that the current density for switching can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover the switching current density is also strongly influenced by DM interaction. In the presentation, we will discuss the effect of domain wall formation and more various DMI constant on the switching current desity in detail.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.23-24
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• 2015

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.179-184
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• 2016

For an industrial spin-transfer torque (STT) MRAM, low switching current and high thermal stability are required, simultaneously. For this point of view, it is essential to find magnetic materials which satisfy high spin polarization and strong perpendicular magnetocrystalline anisotropy (MCA). In this paper, we investigate electronic structures and MCA energies of perovskite $CoFeX_3$ (X = O, F, S, Cl). For X = F and Cl, spin polarization at the Fermi level are 97 % and 96 %, respectively, which are close to a half metal. Furthermore, Co-terminated 5-monolayer (ML) $CoFeX_3$ (X = O, F, S, Cl) films show perpendicular MCA. In particular, the MCA energy of the Co-terminated $CoFeCl_3$ is about 1.0 meV/cell which is three times larger than that of a 5-ML CoFe film. Therefore, we expect to realize a magnetic material with high spin polarization and strong perpendicular MCA energy by utilizing group 6 and 7 elements in the periodic table, and to contribute to commercializing of the STT-MRAM.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.35-42
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• 2009

Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.

• Proceedings of the KIEE Conference
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• 1998.07b
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• pp.490-492
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• 1998

An intention of this paper is design of a gyro actuator for the attitude control of an unstructured object. It is well known that the attitude control of an object hanging with wire is not easy using usual actuators. Even though an actuator such as a pan can be used for control of the object, it is difficult to meet a desired control objectives. We, for this reason, propose a gyro actuator for the attitude control of an unstructured object. The proposed gyro actuator consists of two motors. The first motor is responsible to spin the wheel and the second motor is used to turn the outer gimbal. Appling the torque to the second motor, which results in the turn of the outer gimbal, torque about the vertical axis will be obtained while a wheel of the gyro is spinning constantly. This torque is used to control the attitude of the object attached. The aim of this paper is of deriving the transfer function of the actuator and presenting the guideline of the design parameters such as the weight and the dimension of the wheel, motors, and the load capacity. Simulations to the mathematical model which has a state feedback control are conducted to show the validity of the proposed gyro actuator.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.62.2-62.2
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• 2007