• Journal of Magnetics
• /
• v.11 no.4
• /
• pp.170-181
• /
• 2006

Spin dependent tunneling has enormously activated the field of magnetism in general, and in particular spin transport studies, in the past ten years. Thousands of articles related to the subject have appeared with many fundamental results. Importantly, there is great interest in their potential for application. There was another surge of activity in this field since the past five years - created by the theoretical prediction of a large tunnel magnetoresistance that arises due to band symmetry matched coherent tunneling in epitaxial magnetic tunnel junctions with (001) MgO barrier and experimentally well demonstrated. This further development in the field has boosted the excitement in both fundamental science as well as the possibility of application in such as magnetic random access memory, ultra sensitive read heads, biosensors and spin torque diodes. This review is a brief coverage of the field highlighting the literature that deals with magnetic tunnel junctions having epitaxial MgO tunnel barriers.

• Journal of Magnetics
• /
• v.15 no.4
• /
• pp.185-189
• /
• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

• Applied Science and Convergence Technology
• /
• v.23 no.3
• /
• pp.128-133
• /
• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.60-60
• /
• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Journal of the Korean Magnetics Society
• /
• v.14 no.3
• /
• pp.99-104
• /
• 2004

We have studied to understand the barrier and interface qualities and structural changes through measuring temperature dependent spin-polarization as functions of plasma oxidation time and annealing time. Magnetic tunnel junctions consisting of SiO2$_2$/Ta 5/CoFe 17/IrMn 7.5/CoFe 5/Al 1.6-Ox/CoFe 5/Ta 5 (numbers in nm) were deposited and annealed when necessary. A 30 s,40 s oxidized sample showed the lowest spin-polarization values. It is presumed that tunneling electrons were depolarized and scattered by residual paramagnetic Al due to under-oxidation. On the contrary, a 60s, 70 s oxidized sample might have experienced over-oxidation, where partially oxidized magnetic dead layer was formed on top of the bottom CoFe electrode. The magnetic dead layer is known to increase the probability of spin-flip scattering. Therefore it showed a higher temperature dependence than that of the optimum sample (50 s oxidation). temperature dependence of 450 K annealed samples was improved when the as-deposited one compared. But the sample underwent 475 K and 500 K annealing exhibits inferior temperature dependence of spin-polarization, indicating that the over-annealed sample became microstucturally degraded.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.143.3-143
• /
• 1998

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1205-1211
• /
• 2018

The frustrated magnet has been regarded as a system that could be a promising host material for the quantum spin liquid (QSL). However, it is difficult to determine the spin configuration and the corresponding mechanism in this system, because of its geometrical frustration (i.e., crystal structure and symmetry). Herein, we systematically investigate one of the geometrically frustrated magnets, the $TbB_4$ compound. Using resonant soft x-ray scattering (RSXS), we explored its spin configuration, as well as Tb's quadrupole. Comprehensive evaluations of the temperature and photon energy/polarization dependences of the RSXS signals reveal the mechanism of spin reorientation upon cooling down, which is the sophisticated interplay between the Tb spin and the crystal symmetry rather than its orbit (quadrupole). Our results and their implications would further shed a light on the search for possible realization of QSL.

• Proceeding of EDISON Challenge
• /
• 2016.03a
• /
• pp.336-338
• /
• 2016

Recent multifunctional two-dimensional material research has triggered huge interests in various modifications for substitution of atoms. Instead of novel metals used as the most popular catalysts, nonprecious transition metals are promising candidates for efficient oxidation-reduction transfers. The recent discovery of $Co@C_2N$ has an alternate possiblity as catalysts for the ORR(Oxygen Reduction Reaction) in DSSc(Dye Sensitized Solar Cell) and OER(Oxygen evolution cobalt oxides). Here we report spin-polarized DFT calculations of the structure doped Iron that is one of ferromagnetism atoms like Co to provide a basic desciption of the ferromagnetism of the elemental metals. The spin-density-funtional results present the most stable state energetically is when having pairwise up/down spin.

• Journal of Magnetics
• /
• v.12 no.1
• /
• pp.1-6
• /
• 2007

The spin transfer torque generated by a spin-polarized current can induce the shift of the magnetic domain-wall position. In this work, we study theoretically the current-induced domain-wall motion by using the collective coordinate approach [Gen Tatara and Hiroshi Kohno, Phys. Rev. Lett. 92, 86601 (2004)]. The approach is extended to include not only the domain-wall position and the polarization angle changes but also the domain-wall width variation. It is demonstrated that the width variation affects the critical current.

• Journal of the Korean Magnetic Resonance Society
• /
• v.21 no.1
• /
• pp.1-6
• /
• 2017

Enhancements in NMR sensitivity have been the main driving force to extend the boundaries of NMR applications. Recently, techniques to shift the thermally populated nuclear spin states are employed to gain high NMR signals. Here, we introduce a technique called photochemically induced dynamic nuclear polarization (photo-CIDNP) and discuss its progresses in enhancing the solution-state NMR sensitivity.