• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1258_1259
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• 2009

염료감응형 태양전지 (dye-sensitized solar cell; DSC)는 경제성 한계에 달한 Si 태양전지를 대체할 수 있는 유력한 후보로서, 지금까지 많은 연구개발로 큰 효율향상을 기록했다. 다양한 연구 분야 중에서도, 투명전도성 막과 전해질 층간의 접촉으로 발생하는 전자의 재결합을 막기 위해 삽입하는 compact layer는 ZnO dip-coating, $TiCl_4$ dip-coating, Ti sputtering 등 다양한 제조방법이 제시되었다. 본 연구에서는 $TiCl_4$ 용액을 이용해 spin-coating 방법으로 $TiO_2$ compact layer를 제조하는 시도를 했다. 기존 dip-coating 방법과의 비교를 통해서 본 연구의 spin-coating 방법에 의한 효과를 확인한 결과, standard DSC 대비 33.4%, dip-coating 방법으로 compact layer를 삽입한 DSC 대비 6%의 효율 향상을 기록했다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.103-106
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• 2002

The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.123-126
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• 2010

$Cu_2O$ nanoparticles-based films are fabricated by spin-coating on glass substrates and their optoelectronic characteristics are investigated in this study. The $Cu_2O$ films are nearly all-transparent as high as 98% in a wavelength range from 400 nm to 900 nm and three exciton peaks associated with the sublevels in the conduction band are observed at the wavelengths shorter than 400 nm in the absorption spectrum. Under the illumination of the 325 nm wavelength light, the photocurrent efficiency of the $Cu_2O$ film is $1.8\times10^5 {\mu}A/W$ at a voltage of 2.5 V in air.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.1-4
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• 2003

Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.167-167
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• 2012

Aluminium-zinc-tin oxide (AZTO) 박막 트랜지스터는 Spin-coating 방법으로 제작되었다. AZTO용액의 용매는 2-Methoxyethanol, 용질은 각각 Aluminium nitride, Zinc acetate dihydrate, Tin chloride가 사용되어 제작되었다. 용액의 안정성을 위해서 미량의 Mono ethyl amine이 첨가되었다. 용액의 Zn:Sn의 몰 비율은 1 : 1로 고정 되었으며 Al의 mole비를 다양하게 늘리면서 실험을 진행하였다. 이렇게 만들어진 AZTO용액은 3,000 rpm으로 30초간 Spin-coating하였으며 이후 Furnace system을 통하여 $500^{\circ}C$의 온도로 1시간 동안 후열처리 공정을 진행하였다. AZTO박막을 활성층으로 제작된 박막 트랜지스터는 Al의 비율이 늘어남에 따라 처음엔 이동도가 증가하였으나 이후 이동도가 낮아지며 소자특성이 나빠지는 것을 보였다. 이러한 현상의 원인을 알아보고자 물리적, 전기적, 광학적 분석을 통해서 Al양의 변화가 박막트랜지스터 구동에 미치는 영향을 해석하였다. 먼저 AZTO용액은 열중량측정/시차열분석법(Thermo Gravimetry/Differential Thermal Analysis)을 이용하여 spin-coating 이후 후 열처리 온도 결정 및 박막의 변화를 관찰하였으며, X-선 분광(X-ray photoelectron spectroscopy)을 이용하여 박막의 조성 및 전자구조의 변화를, 타원분광해석법(Spectroscopic Ellipsometry)분석을 통하여 밴드 갭과 전도대 이하 밴드 갭 내에 존재하는 결함상태변화를 관찰하였다. AZTO 박막 내의 Al양을 조절하는 것은 박막내의 에너지 준위의 변화를 야기하고 그로인해 박막트랜지스터의 특성을 변화킨다는 결과를 도출하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.987-991
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• 2009

We report growth of vertically well-aligned zinc oxide (ZnO) nanorods on indium-tin oxide (ITO)/glass substrates using a simple aqueous solution method at low temperature via control of the ZnO seed layer morphology. ZnO nanoparticles acting as seeds are pre-coated on ITO-coated glass substrates. by spin coating to control distribution and density of the ZnO seed nanoparticles. ZnO nanorods were synthesized on the seed-coated substrates in a dipping process into a main growth solution. It was found that the alignment of ZnO nanorods can be effectively manipulated by the spin-coating speed of the seed layer. A grazing incidence X-ray diffraction pattern shows that the ZnO seed layer prepared using the higher spin-coating speed is of uniform seed distribution and a flat surface, resulting in the vertical growth of ZnO nanorods aligned toward the [0001] direction in the main growth process.

• Journal of Korean Ophthalmic Optics Society
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• v.12 no.1
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• pp.17-22
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• 2007

Metal-doped $TiO_2$ thin films were prepared on soda-lime-silica glass substrates by using a spin coating-pyrolysis process. As-deposited films were prefired at $500^{\circ}C$ or 10 min in air. Five-coated films were finally annealed at $600^{\circ}C$ for 30 min in air. High resolution X-ray diffraction, field emission scanning electron microscope and UV spectrophotometer were used to analyze film's property. The largest red shift in optical energy gap is obtained in the Fe-doped $TiO_2$ film.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Bulletin of the Korean Chemical Society
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• v.29 no.3
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• pp.623-626
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• 2008

Spin-coating electrostatic self-assembly (SCESA) is utilized to fabricate a single layer of carboxylic-acid-coated Pd nanoparticles (NPs) (D??5 nm) on an oppositely charged surface. The packing density of a NP monolayer formed on a rotating solid substrate (3000 rpm) was examined with regards to various parameters, including the particle concentration, the pH, and the ionic strength of the solution. Initially, the packing density grew exponentially with increases in the particle concentration, up to a maximum value (of 8.4 ´ 1011/cm2) at 1.2 wt%. The packing density was also found to increase drastically as the pH decreased and the ionic strength of the solution increased; these trends can be attributed to a reduction in the interparticle repulsions among the NPs in the solution and on the substrate. The best result of this study was achieved in a 1.2 wt% solution at pH 8; under these conditions, an NP monolayer with the highest density (namely, 1.6 ´ 1012/cm2) was obtained.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1924-1926
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• 2005

Poly(methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observes by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for repeated annealing cycles at $100^{\circ}C$. 1-V measured at various delay times $(0{\sim}20sec)$ showed little change and the absence of hysteresis in the I-V characteristics with delay times, which eliminate the possibility of deep traps in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.