• Journal of the Korean Ceramic Society
• /
• v.41 no.1
• /
• pp.13-18
• /
• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.4
• /
• pp.312-317
• /
• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• Polymer(Korea)
• /
• v.35 no.5
• /
• pp.375-377
• /
• 2011

$PbTiO_3$/P(VDF/TrFE) 0~3 composites thin films with 0.10 and 0.13 of ceramic volume fraction factor have been fabricated by two-step spin coating technique and analyzed. 0~3 connectivity of $PbTiO_3$/P(VDF/TrFE) composites film was observed successfully by SEM micrography. The SEM picture confirmed 0~3 connectivity. And, in all the properties, 0~3 $PbTiO_3$/P(VDF/TrFE) composites film was superior to P(VDF/TrFE) copolymer. Therefore, with a good low-dielectric constant and a high pyroelectric coefficient, the composite thin films can be used for a new pyroelectric infrared sensor of higher performance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.341-341
• /
• 2011

최근 AMOLED 구동이 가능한 소자에 대한 연구가 활발히 진행중이다. AMOLED구동 가능소자는 LTPS TFT, a-Si TFT, OTFT, Oxide TFT가 있으며 그 중에서 현재 대부분 LTPS TFT를 사용하고 있다. LTPS TFT는 높은 전자 이동도와 안정성을 가지고 있기 때문에 현재 각광 받는 AMOLED에 잘 맞는다. 하지만 LTPS TFT는 고비용, 250$^{\circ}C$ 이상의 공정온도, Substrate가 Glass, Metal로 제한 된다는 문제점이 있으며, 균일성이 낮고 현재 대면적 기술이 부족한 상태이다. 해결방안으로 AMOLED를 타겟으로 하는 Oxide TFT 기술이 떠오르고 있다. Oxide TFT는 이동도가 높고 저온공정이 가능하며 Substrate로 Plastic 기판을 사용할 수가 있어 차후에 Flexible 소자로서의 적용이 가능하다. 또한 기존의 진공장비 사용대신 용액공정이 가능하여 장비사용시간 및 절차를 단축시킬 수 있어 비용적인 유리함을 가지고 있다. Oxide TFT는 단결정 산화물과 다결정 복합 산화물 두 가지 범주를 가지고 있다. Oxide TFT의 재료물질은 ZnO, ZTO, IZO, SnO2, Ga2O3, IGO, In2O3, ITO, InGaO3(ZnO)5, a-IGZO이 있다. 본 연구에서는 산화물질 중 하나인 ZTO를 이용하여 TFT 소자를 제작하였다. 산화물 특성상 열처리 온도에 따라 형성되는 결정의 정도가 다르기 때문에 온도 및 시간 변수에 따른 ZTO의 특성변화에 초점을 맞추어 연구함으로서 최적화된 조건을 찾고자 실험을 진행하였다. 실험을 위한 기판으로 n-type wafer을 사용하였다. PE-CVD 장비를 이용하여 SiNx를 120 nm 증착하고, ZTO 용액을 spin-coating을 이용하여 channel layer을 형성하였다. 균일하게 형성된 ZTO의 결정을 위하여 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$에서 1시간, 3시간, 6시간, 10시간의 온도 및 시간 변수를 두어 공기 중에서 열처리 하였다. ZTO는 약 30 nm 두께로 형성되었다. Thermal evaporator를 이용하여 Source, Drain의 알루미늄 전극을 형성하고, wafer 뒷면에는 Silver paste를 이용하여 Gate전극을 만들었다. 제작된 소자를 dark room temperature에서 측정하였다.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.401-407
• /
• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.1
• /
• pp.40-44
• /
• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.173.1-173.1
• /
• 2016

전이금속 디칼코게나이드는 서로 다른 전이 금속원소와 칼코겐 원소의 결합으로 이루어진 층상 구조의 물질로서, 그래핀과 비슷한 2D 결정성 구조를 지니면서도, 그래핀과는 달리 밴드갭을 가지는 반도체적 성질 때문에 최근 많은 연구가 진행되고 있다. 특히 $WS_2$는 촉매, 전자, 광전자, 센서와 같은 반도체등 다양한 소자에 적용된다. $WS_2$ 합성 방법에는 기계적 박리법, 화학기상증착법, 용액법 등이 있다. 기계적 박리법은 방법이 간단하나 수율이 낮고 균일하게 얻어지지 않으며, 화학기상증착법은 고가의 고온공정이라는 한계점을 가지고 있다. 반면에 용액법은 제조공정이 쉬우며, 저가 대량생산이 가능하다는 이점이 있다. 더욱이 본래 용액법에서는 $WS_2$를 합성하기 위해 $WO_3$를 추가적으로 합성 후 진행하였지만, 쉽게 제조 가능한 $WO_3$ colloidal 용액을 이용하면 sulfurization을 진행하여 $WS_2$를 합성할 수 있다. colloidal 용액을 이용한 합성법은 입자크기 조절이 가능하기 때문에 균일한 나노입자를 uniform 하게 형성할 수 있는 장점이 있다. 본 연구에서는 $WO_3$ colloidal 용액을 spin coating 과 sulfurzation 공정을 거쳐 2D triangle $WS_2$의 합성 및 특성을 분석하였다. 2D $WS_2$의 나노결정구조, 입자 형상 및 광학 특성을 주사전자현미경, 라만 분광기, x-ray 회절분석기 등을 통해 확인하였다. 또한, 합성된 $WS_2$를 이용하여 트랜지스터를 제작하여 전기적 특성을 확인하였다.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.11
• /
• pp.3645-3650
• /
• 2012

Two new blue emitting cationic iridium(III) complexes with two substituted 2-phenlypyridine ligands as main ligands and one 2,2'-biimidazole as an ancillary ligand, $[(L1)_2Ir(biim)]Cl$ (1) and $[(L2)_2Ir(biim)]Cl$ (2), where L1 = 2-(2',4'-difluorophenyl)-4-methylpyridine, L2 = 2-(2',4'-difluoro-3'-trifluoromethylphenyl)-4-methylpyridine and biim = 2,2'-biimidazole, were synthesized for applications in phosphorescent organic light-emitting diodes (PhOLEDs). Their photophysical, electrochemical and electroluminescent (EL) device performances were examined. The photoluminescent (PL) spectra revealed blue phosphorescence in the 450 to 485 nm range with a quantum yield of more than 10%. The iridium(III) compounds studied showed good solubility in organic solvents with no solvatochromism dependent on the solvent polarity. The solution-processed OLEDs were prepared with the configuration, ITO/PEDOT:PSS (40 nm)/mCP:Ir(III) (70 nm)/OXD-7 (20 nm)/LiF (1 nm)/Al (100 nm), by spin coating the emitting layer containing the mCP host doped with the iridium phosphors. The best performance of the fabricated OLEDs based on compound 1 showed an external quantum efficiency of 4.5%, luminance efficiency of 8.52 cd $A^{-1}$ and blue emission with the CIE coordinates (x,y) of (0.16, 0.33).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.781-783
• /
• 2009

We achieved high efficiency and long lifetime in small-molecule organic light-emitting diodes using a blend of polyaniline-based conducting polymer and a perfluorinated ionomer as a hole injection layer (HIL). The HIL formed by single spin coating greatly enhanced the surface work function and thus the hole injection from the anode, which resulted in great improvement in device luminous efficiency. We find that the solution processed HIL outperforms the conventional vacuum-deposited small molecule HIL in terms of the device performance.

• Journal of Convergence for Information Technology
• /
• v.7 no.5
• /
• pp.53-58
• /
• 2017

In the age of oil exhaustion, low cost, semi-transparent solar cell, the dye-sensitized solar cell (DSC) has attracted significant attention since 1991 of $Gr{\ddot{a}}tzel$ report. To enhance the light-harvest capability of the photoelectric electrode, and efficiency of photoelectric transformation of the DSC, scattering layer of various structure have been proposed to photoelectric electrode materials. The scattering center of scattering layer needs the large titanium dioxide nanoparticles of 250 - 300 nm in diameter. In this study, the large sized $TiO_2$ nanocyrstals of around 300 nm were synthesized using the modified sol-gel process. According to the analysis of XRD and TEM, the synthesized $TiO_2$ nanoparticles exhibit single crystals of anatase phase. The optical transmittance of the synthesized titanium dioxide film prepared by spin coating is around 50% at 550 nm. It is suitable for scattering layer as a scattering center, and expected to enhance the efficiency of photoelectric transformation of the DSC.