• 제목/요약/키워드: spectrum hole

검색결과 147건 처리시간 0.03초

유기 전계발광소자의 제작과 특성 연구 (Preparation and Properties of Organic Electroluminescent Devices)

  • 노준서;장호정
    • 마이크로전자및패키징학회지
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    • 제9권1호
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    • pp.9-13
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    • 2002
  • 최근, 효율적인 다층박막 구조로된 풀칼라 유기 전계발광소자 (organic electroluminescient device, OELD)의 시제품이 개발된바 있다. 본 연구에서는 ITO (indium tin oxide)/glass 투명기판위에 다층구조의 OELD 소자를 진공 열증착법으로 제작하였다. 사용된 저분자 유기화합물은 전자수송 및 주입층으로 $Alq_3$(trim-(8-hydroxyquinoline)aluminum)와 CTM (carrier transfer material) 물질을 사용하였고, 정공수송 덴 주입층으로는 TPD (triphenyl-diamine)와 CuPc (copper phthalocyanine)를 각각 증착하였다. 발광휘도는 임계전압 10 V 이상에서 급격히 증가하였으며, $A1/CTM/Alq_3$/TPD/1TO 구조로된 OELDs 소자의 경우- l7 V전압에서 430 cd/$m^2$의 휘도특성과 파장 512 nm의 녹색 발광을 나타내었다. 한편 $Li-A1/Alq_3$/TPD/CuPC/1TO 다층구조로된 소자의 발광파장은 508 nm 이며, 발광휘도는 17 V에서 650 cd/$m^2$의 값을 얻을 수 있었다. Li-Al 전극을 갖는 다층구조에서 발광휘도의 증가는 정공주입층인 CuPc의 적층으로 발광층에서 재결합 효율이 개선되었기 때문이며, 또한 Li-Al 전극의 경우 Al전극에 비해 낮은 일함수(work function)를 갖기 때문으로 판단된다.

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Identifying Young AGNs using the Korean VLBI Network

  • Jeong, Yongjin;Sohn, Bong Won;Chung, Aeree
    • 천문학회보
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    • 제40권1호
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    • pp.42.2-42.2
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    • 2015
  • High frequency peakers (HFPs) are promising candidates for young active galactic nuclei (AGNs). Their small physical scale (< 1 kpc) and radio spectrum peaked at high frequency (> 5 GHz) are suggestive that it has been only about $10^2-10^3$ years since a central massive black hole in their host galaxies was launched. Until recently however, long-term monitoring radio observations at frequencies which are high enough to cover the true peak of HFP candidates were rare. Therefore, previous HFP samples are often contaminated by blazars, which are highly variable, hence may show a similar radio spectrum as HFPs depending on the observational epoch. In this work, we challenge to identify genuine young AGNs by monitoring HFP candidates at high radio frequencies. We performed single-dish monitoring of 19 candidates in 18 epochs over 2.5 years at 22 and 43 GHz using the Korean VLBI Network (KVN). Also, using KaVA, a combined array of the KVN and the VERA in Japan, we carried out 22 GHz VLBI observations of two HFPs and one blazar selected from our sample in order to compare their parsec scale (milli-arcsecond scale) morphology. HFPs are expected to have double/triple features, so called compact symmetric objects, which are scaled-down versions of extended radio galaxies, while blazars typically show core-jet morphology. We discuss the properties of AGNs at their very early evolutionary stage based on the results of the KVN and KaVA observations.

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The Optical and Electrical Properties of Vacuum-Deposited Thin Films using Europium Complex [Eu(TTA)$_3$(phen)]

  • 이명호;김영관;이한성;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.53-56
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    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

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Yellow Light-Emitting Poly(p-phenylenevinylene) Derivative with Balanced Charge Injection Property

  • Kim, Joo-Hyun;Lee, Hoo-Sung
    • Bulletin of the Korean Chemical Society
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    • 제25권5호
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    • pp.652-656
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    • 2004
  • A new luminescent polymer, poly{1,4-phenylene-1,2-ethenediyl-2'-[2"-(4'"-octyloxyphenyl)-(5"-yl)-1",3",4"-oxadiazole]-1,4-phenylene-1,2-ethenediyl-2,5-bis-dodecyloxy-1,4-phenylene-1,2-ethenediyl} (Oxd-PPV), was synthesized by the Heck coupling reaction. Electron withdrawing pendant, conjugated 1,3,4-oxadiazole (Oxd), is on the vinylene unit. The band gap of the polymer figured out from the UV-visible spectrum was 2.23 eV and the polymer film shows bright yellow emission maximum at 552 nm. The electroluminescence (EL) maximum of double layer structured device (ITO/PEDOT:PSS/Oxd-PPV/Al) appeared at 553 nm. Relative PL quantum yield of Oxd-PPV film is 3.6 times higher than that of MEH-PPV film. The HOMO and LUMO energy levels of Oxd-PPV figured out from the cyclic voltammogram and the UV-visible spectrum are -5.32 and -3.09 eV, respectively, so that more balanced hole and electron injection efficiency can be expected compared to MEH-PPV. A double layer EL of Oxd-PPV has an maximum efficiency of 0.15 cd/A and maximum brightness of 464 cd/$m^2$.

Fabry-Perot 레이저 다이오드의 Missing Mode (Missing Modes in Fabry-Perot Laser Diodes)

  • 이동수
    • 조명전기설비학회논문지
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    • 제19권1호
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    • pp.9-14
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    • 2005
  • Fabry-Perot 레이저 다이오드의 missing mode의 원인으로 의심되는 활성층 내의 구조적 결함과 리플의 영향을 TDLM(time domain laser model)방식을 사용하여 모델링하였다. 보다 정확한 모델링의 결과를 얻기 위하여 여러가지 비선형 효과를 추가 고려하였다. 이를 이용하여 레이저 다이오드를 시뮬레이션하였고, 모드 스펙트럼(mode spectrum)을 구하였다. 실제 레이저 다이오드의 missing mode를 측정하기 위한 실험 장비를 구성하여 측정 결과를 추출하였고, 시뮬레이션과 측정 실험 결과로부터 결론을 내렸다.

DETECTION AND CLASSIFICATION OF DEFECTS ON APPLE USING MACHINE VISION

  • Suh, Sang-Ryong;Sung, Je-Hoon
    • 한국농업기계학회:학술대회논문집
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    • 한국농업기계학회 1996년도 International Conference on Agricultural Machinery Engineering Proceedings
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    • pp.852-862
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    • 1996
  • This study was carried out to develop tools to detect defects of apple using machine vision. For the purpose, 6 kinds of frame for color images, R, G, B, h, S, and I frame, and a frame for near infra-red images (NIR frame) were tested first to select one which is useful to segment defect areas from apple images. After then, several methods to classify kind of defect for the segmented defect areas were developed and tested. Five kinds of apple defect -bruise , decay ,fleck worm hole and scar were investigated . The results are as follows: NIR frame was selected as the best one among the 7 kinds of image frame, and R, G and I frames showed favourable result to segment areas of apple defect. Various features of the segmented defect areas were measured to classify the defect areas. Eight kids of feature of the areas-size, roundness, axes length ratio, mean and variance of pixel values, variance of real part of spectrum, mean and variance of power spectrum resulted from spacial ourier transform were observed for the segmented defect areas in the selected 4 frames. then procedures to classify defects using the features were developed for the 4 frames and tested with 75-113 defects on apples. The test resulted that NIR and I frames showed high accuracies to classify the kind of defect as 77% and 76% , respectively.

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Europium compound박막의 전기적 광학적 특성에 관한 연구 (Studies on The Optical and Electrical Properties of Europium Complex)

  • 이명호;표상우;김영관;김정수;이한성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.317-320
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    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

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KVN Observation on Radio-selected AGNs hosted by Elliptical Galaxies

  • 박송연;이석영;손봉원
    • 천문학회보
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    • 제36권2호
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    • pp.61.1-61.1
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    • 2011
  • We have performed simultaneous observations at 22GHz and 43GHz on AGNs hosted by elliptical galaxies using KVN radio telescope. We have constructed the sample, based on two major surveys in radio and optical band, i.e. Faint Images of the Radio Sky at Twenty-Centimeters (FIRST) and Sloan Digital Sky Survey (SDSS) DR7, respectively. We restricted the redshift range 0.01 < z < 0.06 and the absolute magnitude Mr < -19.4 in order to satisfy volume limited sample. We also checked clear detection of four distinctive emission lines ([NII], [OIII], $H{\alpha}$, $H{\beta}$) so as to utilize on BPT diagram, distinguishing AGNs from star-forming galaxies. Elliptical galaxies have been selected by visual inspection making use of SDSS optical images. Then, we cross-matched the elliptical galaxies with FIRST detections. About 35% of the galaxies have been detected throughout KVN observations. We derive spectral index, applying the flux of different radio frequencies from FIRST (1.4GHz) and KVN (22GHz) and classify into steep, flat or inverted spectrum. We have found that most of the detected galaxies have flat spectrum while the rest of them have steep spectrum. This implies that a number of detected galaxies might have compact structure associated with the central region of the galaxies. The relation between black hole mass and radio luminosity has shown relatively tighter correlation in high frequency than in low frequency, which confirms that high frequency in radio band is appropriate to study the center of the galaxies.

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Buffer층을 가진 유기 전기 발광 소자의 특성 (Characteristics of organic electroluminescent devices having buffer layers)

  • 이호식;고삼일;정택균;이원재;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.399-402
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    • 1998
  • Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

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SENSITIVITY ANALYSIS TO EVALUATE THE TRANSPORT PROPERTIES OF CdZnTe DETECTORS USING ALPHA PARTICLES AND LOW-ENERGY GAMMA-RAYS

  • Kim, Kyung-O;Ahn, Woo-Sang;Kwon, Tae-Je;Kim, Soon-Young;Kim, Jong-Kyung;Ha, Jang-Ho
    • Nuclear Engineering and Technology
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    • 제43권6호
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    • pp.567-572
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    • 2011
  • A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.