• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1999년도 제2회 총회 및 춘계학술발표회
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• pp.9-9
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• 1999

• 한국광학회:학술대회논문집
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• 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.13-13
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• 1997

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.194-195
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• 2002

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.37-39
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• 2006

We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.

• 한국진공학회지
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• 제16권1호
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• pp.40-45
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• 2007

본 연구에서는 광전자 소자에 폭넓게 사용되는 ZnCdSe 화합물 반도체의 end-point인 CdSe의 유전함수 spectrum을 Vacuum Ultra Violet spectroscopic ellipsometry(타원편광분석법) 측정하여 분석하였다. 측정 결과는 변수화 모델을 이용하여 분석하였으며 그 결과 6 eV 이상에 존재하는 전자전이점들을 확인할 수 있었고 CdSe의 Critical Point(CP) 구조를 수치화 함으로써 온도나 화합물 함량에 따른 광특성 의존성 연구 등에 활용될 수 있는 database를 확보하였다.

• 한국진공학회지
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• 제8권3B호
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• pp.327-332
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• 1999

High speed real-time spectroscopic ellipsometry was employed in order to characterize the growth of chromium thin film. This instrument can collect 512 points of {$\Delta$(hv), $\Psi$(hv)} spectra from 1.3 to 4.5 eV with acquisition and repetition rates of 20 msec or less. When this instrument was integrated into the chromium thin film growth, we could obtain not only the information on film properties but also the details of the processes. We deduced the growth rates and the evolution of the optical properties of chromium thin films under several preparation conditions. We also demonstrated the contamination process of chromium thin films caused by air exposure.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.49-54
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• 1998

The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200 ${\AA}$ of the Si substrate under diamond growth conditions, real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystallind thin films prepared by PECVD. RTSE shows that a significant volume fraction of nondiamond(or{{{{ {sp }^{2 } -bonded}}}}) carbon forms during thin film coalescence and is trapped near the substrate interface between ∼300 ${\AA}$ diamond nuclei.

• 한국세라믹학회지
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• 제47권4호
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

• Journal of Korean Vacuum Science & Technology
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• 제5권2호
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• pp.52-55
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• 2001

We report best dielectric function of ZnS by spectroscopic ellipsometry in the 3.7 - 6.0 eV photon energy range at room temperature. Using proper wet chemical etching procedure, natural overlayer was removed to obtain the pure dielectric function of ZnS, which had a higher <$\xi$$_2$> value at the El band gap peak than that previously reported. We also determined the dielectric property of the natural overlayer on ZnS by following the evolution of <$\xi$$_2$> with chemical etching. We found that the optical property of the overlayer was well described by amorphous semiconductor model.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.34-35
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• 2003

광통신 분야에서 광신호의 장거리 전송에 따른 세기 감소를 보강하기 위해 쓰이는 광섬유증폭기는 현재 1.3 $\mu\textrm{m}$ 대역, 1.45 $\mu\textrm{m}$ 대역 및 1.5 $\mu\textrm{m}$ 대역에서 작동하는 희토류 이온 첨가 광섬유 광증폭기가 개발되어 쓰이고 있다. 한편 ETRI에서는 기존 광통신에 쓰이는 광 증폭기에 추가해 더 넓은 파장대를 광통신에 쓸 수 있도록 하는 새로운 파장대역의 광 증폭기 구현을 가능케하고 나아가 광통신 용량을 기존보다 휠씬 더 큰 10 Tbps급 이상으로 늘이기 위해 1.6 $\mu\textrm{m}$ 파장대인 U 밴드대 광증폭기용 광섬유인 Pr 첨가 셀레나이드 유리 조성의 신소재를 개발하였는데, 본 연구에서는 Ge-Sb-Ga-Se 계열의 Pr 첨가 셀레나이드 유리의 굴절률을 분광타원 법 (spectroscopic ellipsometry)을 사용하여 결정하였다. (중략)