• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.329-329
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• 2011

We investigated the thin films of poly(3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) prepared by ultrahigh vacuum (UHV) electrospray depositioin (ESD) by using in-situ XPS, UPS and ambient-pressure AFM. The morphology, chemical structures, and interface properties of these materials, most widely used for bulk heterojunction organic solar cells, were studied depending on the ESD solution compositions and concentrations. We found that the solution conductivity and flow rate as well as applied voltage are the important parameters for stable electrospray and film formation. These results suggest that UHV ESD is a viable method for the deposition of multilayers of polymers under UHV condition. We also discuss the energy level alignment for the various deposition conditions at the interface, which is one of the most important operating parameters of the bulk heterojunction organic solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.570-574
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• 1999

In this paper, by using the electrophoresis, preparation of YBCO superconducting wire deposited on metal Ag base wire was studied with its Properties. YBCO Powder could be prepared by solid state reactions with calcining and sintering processes. Superconducting wire prepared on metal Ag wire used as cathode of deposition base could be also fabricated in the YBCO/acetone-dispersed solution to obtain several tens of re thick films. And then it could be used as superconducting wire for measurement after calcination, sintering and oxygen absorption processes. In the process of film deposition, a catalyst I$_2$added into the suspension solution was very useful for preparing thick film of YBCO, and BaF$_2$ of additive material was also necessary for preparing crack-free wire of YBCO superconductor. As a result, YBCO superconducting wire added 2~3wt.% of BaF$_2$\ulcorner with catalyst, 12 had better deposition condition for uniform and dense YBCO wires, and critical current density, Jc was calculated at the value of 1,458A/$\textrm{cm}^2$(more than 10$^{3}$A/$\textrm{cm}^2$ ,77K, o[T]) of 30${\mu}{\textrm}{m}$ thick sample by 4 point prove method.

• 대한기계학회논문집B
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• 제23권3호
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• pp.299-310
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• 1999

Effect of electrostatic and inertial forces on the pre-charged particle deposition was theoretically and experimentally studied by introducing the inertia impactor subjected to an electric field. To derive the analytic solution, we assumed that a flow was an ideal stagnation flow, a particle had saturation charges, and the electric field within the test section was uniform. On the other hand, $Al_2O_3$ particle groups were used as the test particles, which mean sizes were $1{\mu}m$, $3{\mu}m$, and $5{\mu}m$. To measure the deposition efficiency, the light scattering method was used. The results showed that the deposition efficiency was minimized at a certain nozzle velocity as increasing the nozzle velocity, only if the electric force was applied. As the electric field strength increased, $Stk_{50}{^{1/2}}$ was decreased, and its decreasing rate was reduced with increasing the flow velocity. Moreover the existence of electric field was against the cut-off performance of the inertia impactor.

• Korean Chemical Engineering Research
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• 제49권5호
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• pp.600-604
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• 2011

본 연구에서는 박막 트랜지스터(TFTs)에 사용 가능한 Indium Gallium 산화물(IGO) 박막을 스핀코팅을 이용한 화학적 용액공정을 사용하여 $SiO_2$/Si 기판 위에 증착시켰다. 또한 IGO 박막을 증착한 후에 이루어지는 열처리 온도가 박막의 결정화에 미치는 영향과 이들의 전기적 특성이 조사되었다. 스핀코팅법에 의한 IGO 박막을 증착하기 위해 사용된 In과 Ga의 비율은 2:1로 고정하였으며, 박막의 열처리 온도는 $300{\sim}600^{\circ}C$의 범위에서 변화시켰다. 공기 중에서 $300^{\circ}C$와 $600^{\circ}C$에서 1시간 동안 열처리한 IGO 박막을 사용하여 제조한 박막 트랜지스터의 전류 이동도(field effect mobility)는 각각 0.34와 3.83 $cm^2/V{\cdot}s$로서 양호한 전자소자의 성능을 보였다. 또한 on/off 전류비(current ratio)는 $10^5$ 이상이었으며, IGO 박막의 평균 투과율은 98%이었다.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.270-271
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• 2009

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.153-153
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• 2005

• 한국정밀공학회지
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• 제30권6호
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• pp.567-572
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• 2013

In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.97-100
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• 2004

In this paper, the preparation of BSCCO superconducting wire by electrophoretic deposition method and the effect of suspension medium used with various solvent solutions of ethanol and buthanol for electrophoretic deposition were studied. The preheating technique in vacuum system for the superconducting powders coated on Ag wire was also investigated. As a result, it was confirmed that the preheating technique was very useful to remove the influence of remains affected to the surface conditions of superconducting wire. And the adsorbed solvent solution which was existed between and on the deposited particle surfaces was almost disappeared at the treating conditions of about $10^{-3}$ Torr and around $200^{\circ}C$ in bell-jar system. By measurement of 4-point prove method, the critical current density($J_c$) of BSCCO superconducting wire was obtained at the value of more than $10^4\;A/cm^2$ in liquid $N_2$(77 K, 0 T).

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.8-13
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• 2007

In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.57-61
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• 1997

The effects of pH of solution on structural, electrical, and optical properties of CdS thin films prepared by solution growth method were investigated. With increasing pH of the solution, both crystallinity and transmittance of CdS thin film were deteriorated due to impurities and CdS particles, which were produced by homogeneous nucleation and adsorbed on the surface of CdS thin films. The films were strongly adherent to substrates and has low resistivity of 10~$10^2{\omega}cm$ regrardless of deposition conditions. After annealing at 30$0^{\circ}C$ in Ar atmosphere, the resistivity decreased due to desorption of impurity ions as well as the formation of S vacancies, but after annealing above 35$0^{\circ}C$ it increased by an agglomeration of S vacancies. After annealing in air atmosphere, the film resistivity increased because of the formation of oxide particle in grain boundaries.