• Textile Coloration and Finishing
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• v.20 no.1
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• pp.44-47
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• 2008

Organic semi-conductive materials have characteristics such as the advantages of easy formability, low-cost and diversity along with moderate semi-conductive properties. In this paper, we developed a flexible organic-inorganic hybrid solar cell fiber. First, we made a solar cell on the glass and attached the solar cell on the glass fiber similarly. In the latter case, thermal deposition method was employed in order to effectively apply ITO onto fiber surface. The amount of ITO was controlled by varying the temperature from 25, 150 to $300^{\circ}C$. Optimum result was obtained at $150^{\circ}C$ where maximize the deposition amount without significant decomposition of ITO. Despite of maximum open circuit voltage of 0.39V, the resulting current was quite unstable and weak, limiting realistic applications. It was, however, concluded that the flexible solar cell fiber developed showed a possibility of low-weight application from functional clothing for military to space suit mainly due to flexibility and thus wear ability.

• Journal of the Optical Society of Korea
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• v.19 no.2
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• pp.199-205
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• 2015

We investigated the effects of the thickness and doping concentration in p- and n-type poly-Si layers on the performance of a solar cell based on a carbon fiber in order to improve the energy conversion efficiency of the cell. The short-circuit current density and open-circuit voltage of the carbon fiber-based solar cell were significantly influenced by the thickness and doping concentration in the p- and n-type poly-Si layers. The solar cell efficiency was successfully enhanced to ~10.5%.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.299-301
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• 2007

An organic-inorganic hybrid solar cell fibers with characteristics such as formability, low-cost and tailorability was developed by deposition of C60 and CuPc on fiber surface. In spite of some variation according to the temperature of ITO deposition, the maximum open circuit voltage of 0.39V was attained at $150^{\circ}C$(1000end). The resulting solar cell showed the performances Isc=0.482, Voc=0.320, FF=0.285 ${\eta}_{e}=0.044$% which are comparable to one of other types of solar cells in literature.

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.356-357
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• 2003

Organic materials are suitable for use in photoelectric conversion devices. Thus, Organic semiconductors are promising materials for photovoltaic devices and other optoelectronic applications such as light emitting diodes(LED). The organic solar cell seems to be the usefulness in comparison with the inorganic solar cell in terms of workability, ease of processing, low cost, flexibility and area expansion. (omitted)

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2218-2224
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• 2010

Dye-sensitized solar cell (DSC) is a promising alternative solar cell to the conventional silicon solar cell due to several advantages. Development of large scale module is necessary to commercialize the DSC in the near future. A scribing technology of the transparent conductive oxide (TCO) is one of the important technologies on the fabrication of DSC module. A quality of the scribed line on the TCO has a decisive effect on the efficiency of DSC module. Among several scribing technologies, the fiber laser is a suitable for scribing the TCO more precisely and accurately because of their own characteristics. In this study, we try to improve the quality of the TCO scribed line by using the fiber laser. Consequently, the operating parameter of fiber laser is optimized to get the TCO scribed line with good quality. And the fiber laser scribing technology of the TCO is applied to the fabrication of the DSC with optimal operating parameter, operating current 3900mA. As a result, the current density and fill factor are improved and the total efficiency is increased because the internal resistances of DSC such as TCO sheet resistance and the resistance concerned to the electron movement in the $TiO_2$ are reduced. This is analyzed by the electrochemistry impedance spectroscopy (EIS) and the equivalent circuit model of the DSC.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.25 no.5
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• pp.362-367
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• 2016

Recently, wireless charging systems have expanded their applications from household electrical appliances to outdoor activity devices. In wireless charging systems, solar cells have versatile advantages, such as abundant raw materials within the earth, reasonable prices of products, and highest power conversion efficiency. In this study, the photovoltaic effect between a silicon solar cell and a photon of infrared wavelength was simulated using a Shockley diode equation. A solar cell power charging system was then set up to: 1) clarify mechanisms of the charging interaction based on the photovoltaic effect with a laser source, and 2) verify interdependency of the parameters: laser settings and geometrical position between a solar cell and the laser. As was observed, the solar cell generates more power when the photon was irradiated uniformly, intensively, and vertically on the surface of the solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.270-270
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• 2009

The surface texturing technology is one of the methods to improve the efficiency of crystalline silicon solar cell. This process reduced the reflectance at the surface by the so-called double bounce effect and increased the light trapping. Among these surface texturing technology, the laser texturing is effective for multi-crystalline silicon solar cells which have random crystallographic directions. We investigated the characteristics of laser processing on the surface of the multi-crystalline silicon solar cells using the fiber laser.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.12
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• pp.82-90
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• 2019

This analysis demonstrates the effective removal of heat generated from a solar panel's output degradation factor solar cells (the solar panel's output deterioration factor), and solves the problems of oxidation and corrosion in existing metal heat sinks. The heat-dissipating test specimen was prepared using carbon materials; then, its thermal conductivity and its effectiveness in reducing temperatures were studied using heat transfer numerical analysis. As a result, the test specimen of the 30g/㎡ basis weight containing 80% of carbon fiber impregnated with carbon ink showed the highest thermal conductivity 6.96 W/(m K). This is because the surface that directly contacted the solar panel had almost no pores, and the conduction of heat to the panels appeared to be active. In addition, a large surface area was exposed to the atmosphere, which is considered advantageous in heat dissipation. Finally, numerical analysis confirmed the temperature reduction effectiveness of 2.18℃ in a solar panel and 1.08℃ in a solar cell, depending on the application of heat dissipating materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.