• Solar Energy
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• v.12 no.2
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• pp.18-27
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• 1992

Multilayer coatings of $WO_3$ were deposited by the sol-gel technique on microscope slide glass and ITO coated glass. These films were characterized optically, chemically, and structurally by XRD, spectro-photometry, DTA/TGA, SEM/EDAX and RBS. Uniform $WO_3$ sol-gel films were dip coated on slide glass at dipping speed of 5mm/s. This sample indicated a low near IR transmittance in optical properties as a result of coloration using a dilute HCI electrolyte as the $H^+$ion sources. Differential thermal analysis results have allowed the accurate determination of the formation temperature of the $WO_3$ crystalline phase from the gel data in the range of $380^{\circ}C{\sim}500^{\circ}C$, consistent with crystallization temperature of sol-gel film. RBS spectrometry was performed on the uncolored $WO_3$ sol-gel film, yielding a chemical composition of $WO_3$.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.357-366
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• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1433-1435
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• 2003

Ti-Sn sol is fabricated using sol-gel method. Initial viscosity of sol decreases with increasing HCl additive. Gelation of sol is retarded with increasing HCl additive. From the results of TG-DTA, the peaks of particular organics combustion do not occur because Sn sol is hydrolyzed sufficiently.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.484-485
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• 2003

We report on the optimization of the fabrication process of hybrid sol-gel thin film deposition to produce low cost $1 {\times} 16$ splitters for optical communications. We learn that sol-gel film thickness is dependent upon the spinning speeds and viscosity of the sol-gel solutions and refractive index upon the dopant concentrations of Al and Zr in the sol solutions. We could find the optimized physical conditions to achieve the desired thickness of core and cladding layers. We will further carry out the fabrication and measurements of insertion loss, polarization dependent loss (PDL), etc. for the performance of fabricated splitter devices.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.325-330
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• 1994

In this paper, $TiO_2$ thin films were fabricated by Sol-Gel method and their electrical conductivity and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis condition. The uniform surface of thin films was confirmed by SEM. The electrical conductivity of thin films decreased with increasing heat treatment temperature. The humidity sensing properties of thin films were good in high humidity and low frequency regions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.230-231
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• 2006

We synthesized sol according to kinds(particle size/stabilized ion) of colloidal silica(CS), content ratio of alkoxysilane versus CS and reaction degree in sol solution and studied the surface property of coated gel materials. The contact angle of the thin films prepared from LHSA/N1030 CS/tetramethoxysilane(TMOS)/methyltrimethoxysilane(MTMS) sol-gel reaction system showed a little good relationship with content ratio of TMOS/MTMS silanes. The surface roughness of LHSA CS/TMOS/MTMS reaction system showed flatter than that of LHSA/N1030 CS. The thermal degradation of LHSA CS/TMOS/MTMS coating flim occurred at $550^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.511-516
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• 2002

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\cric}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.557-560
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• 2003

The submicron $YBa_2Cu_3O_x$ powder was prepared by the sol-gel method. The particle size is distributed from 0.2 to $1.0\;{\mu}m$, which benefits to eliminate the micro-cracks formed in the $YBa_2Cu_3O_x$ films deposited by electrophoresis. The powder was single phase of $YBa_2Cu_3O_x$ examined by X-ray diffraction. In the sol-gel process the citrate gel was formed from citric acid and nitrate solution of $Y_2O_3$, $Ba(NO_3)O_2$ and CuO. When pH values were adjusted to $6.4{\sim}6.7,\;Ba(NO_3)O_2$ could be dissolved in the citrate solution completely. Appropriate evaporative temperature of the sol-gel formation is discussed. After the heat treatment the transition temperature($T_c$) and critical current density($J_c$) of the $YBa_2Cu_3O_x$ samples made of the submicron powder were measured.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.1-5
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• 2001

Inorganic-organic hybrid Li$^+$ ion conductors were prepared by the sol-gel process. Tetramethyl orthosilicate (TMOS), polyethylene glycol 200 (PEG$_200$) and lithium bis (trifluoro-methylsulfony) imide were used as raw materials and $H_2O$ was used as a solvent. Hybrid Li$^+$ ion conductor prepared by the sol-gel process showed very high ion conductivities of log${\sigma}_R.T$(S/cm)=-3.73, log${\sigma}_60$(S/cm)=-3.00 at room temperature and $60^{\circ}C$, respectivery. Decomposition voltage was 3.1 V.