• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 추계학술대회 논문집
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• pp.142-144
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• 2007

이 논문은 세탁기 모터 구동을 위한 단일 전류 센서 방식에서 3상 전류 복원 방법에 대한 기존 방법에 있어서의 문제점 개선 을 위하여 최소전압 주입 방식 과 Smooth 전압 주입 방식을 제시 하고 인버터에서의 전류 복원 향상을 통한 고조파 와 소음 개선 방법을 제시 하였다. 또한 제시된 방식의 타당성을 검증하기 위한 시뮬레이션 및 실험 결과를 고찰하는 것을 목적으로 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.81-84
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• 2003

Conductive polyaniline(PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3V, whereas that of ITO/P3HT/LiF/Al device shows 5V.

• Journal of Power Electronics
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• 제18권3호
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• pp.863-870
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• 2018

The traditional power control theories for the harmonic reduction methods in multilevel inverters are found to be unreliable under unbalanced load conditions. The unreliability in harmonic mitigation is caused by voltage fluctuations, non-linear loads, the use of power switches, etc. In general, the harmonics are reduced by filters. However, such devices are an expensive way to provide a smooth and fast response to secure power systems during dynamic conditions. Hence, the Decoupled Double Synchronous Reference Frame (DDSRF) theory combined with a State Delay Controller (SDC) is proposed to achieve a harmonic reduction in power systems. The DDSRF produces a sinusoidal harmonic that is the opposite of the load harmonic. Then, it injects this harmonic into power systems, which reduces the effect of harmonics. The SDC is used to reduce the delay between the compensation time for power injection and the generation of a reference signal. The proposed technique has been simulated using MATLAB and its reliability has been verified experimentally under unbalanced conditions.

• 한국전기전자재료학회논문지
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• 제19권11호
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• pp.1044-1049
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• 2006

We reported on characteristics of the fluorescent OLED fabricated on commercial ITO/glass and BCS grown IZO/glass substrate, respectively. The amorphous IZO anode film grown by box cathode sputtering(BCS) exhibited similar electrical and optical characteristics to commercial ITO anode even though it was deposited at room temperature. In addition, the amorphous IZO anode showed higher workfunction (5.2 eV) than that of the commercial ITO anode (5.0 eV) after ozone treatment for 10 min. Furthermore, fluorescent OLED fabricated on amorphous IZO anode film showed improved current-voltage-luminance characteristics, external quantum efficiency and power efficiency en contrast with fluorescent OLED fabricated on commercial ITO anode film. It was thought that smooth surface and high workfunction of amorphous IZO anode lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.