• Journal of the Society of Disaster Information
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• v.17 no.1
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• pp.25-38
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• 2021

Purpose: To reduce the damage caused by continuously occurring typhoons, we proposed a standardized grid so that it could be actively utilized in the prevention and preparation stage of typhoon response. We established grid-based convergence information on the typhoon risk area so that we showed the effectiveness of information used in disaster response. Method: To generate convergent information on typhoon hazard areas that can be useful in responding to typhoon situation, we used various types of data such as vector and raster to establish typhoon hazard area small grid-based information. A standardized grid model was applied for compatibility with already produced information and for compatibility of grid information generated by each local government. Result: By applying the grid system of National branch license plates, a grid of typhoon risk areas in Seoul was constructed that can be usefully used when responding to typhoon situations. The grid system of National branch license plates defines the grid size of a multi-dimensional hierarchical structure. And a grid of typhoon risk areas in Seoul was constructed using grids of 100m and 1,000m. Conclusion: Using real-time 5km resolution grid based weather information provided by Korea Meteorological Administration, in the future, it is possible to derive near-future typhoon hazard areas according to typhoon travel route prediction. In addition, the national branch number grid system can be expanded to global grid systems for global response to various disasters.

• Geophysics and Geophysical Exploration
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• v.1 no.1
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• pp.25-30
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• 1998

Time-lapse crosswell seismic data, recorded before and after the cavity filling, showed that the filling increased the velocity at a known cavity zone in an old mine site in Inchon area. The seismic response depicted on the tomogram and in conjunction with the geologic data from drillings imply that the size of the cavity may be either small or filled by debris. In this study, I attempted to evaluate the filling effect by analyzing velocity measured from the time-lapse tomograms. The data acquired by a downhole airgun and 24-channel hydrophone system revealed that there exists measurable amounts of source statics. I presented a methodology to estimate the source statics. The procedure for this method is: 1) examine the source firing-time for each source, and remove the effect of irregular firing time, and 2) estimate the residual statics caused by inaccurate source positioning. This proposed multi-step inversion may reduce high frequency numerical noise and enhance the resolution at the zone of interest. The multi-step inversion with different starting models successfully shows the subtle velocity changes at the small cavity zone. The inversion procedure is: 1) conduct an inversion using regular sized cells, and generate an image of gross velocity structure by applying a 2-D median filter on the resulting tomogram, and 2) construct the starting velocity model by modifying the final velocity model from the first phase. The model was modified so that the zone of interest consists of small-sized grids. The final velocity model developed from the baseline survey was as a starting velocity model on the monitor inversion. Since we expected a velocity change only in the cavity zone, in the monitor inversion, we can significantly reduce the number of model parameters by fixing the model out-side the cavity zone equal to the baseline model.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.179-200
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• 1996

The intrinsic instabilities of fluid flow occurred in the melt of the Czochralski crystal growth system Czochralski method, asymmetric flow patterns and temperature profiles in the melt have been studied by many researchers. The idea that the non-symmetric structure of the growing equipment is responsible for the asymmetric profiles is usually accepted at the first time. However further researches revealed that some intrinsic instabilities not related to the non-symmetric equipment structure in the melt could also appear. Ristorcelli had pointed out that there are many possible causes of instabilities in the melt. The instabilities appears because of the coupling effects of fluid flow and temperature profiles in the melt. Among the instabilities, the B nard type instabilities with no or low crucible rotation rates are analyzed by the visualizing experiments using X-ray radiography and the 3-D numerical simulation in this study. The velocity profiles in the Silicon melt at different crucible rotation rates were measured using X-ray radiography method using tungsten tracers in the melt. The results showed that there exits two types of fluid flow mode. One is axisymmetric flow, the other is asymmetric flow. In the axisymmetric flow, the trajectory of the tracers show torus pattern. However, more exact measurement of the axisymmetrc case shows that this flow field has small non-axisymmetric components of the velocity. When fluid flow is asymmetric, the tracers show random motion from the fixed view point. On the other hand, when the observer rotates to the same velocity of the crucible, the trajectory of the tracer show a rotating motion, the center of the motion is not same the center of the melt. The temperature of a point in the melt were measured using thermocouples with different rotating rates. Measured temperatures oscillated. Such kind of oscillations are also measured by the other researchers. The behavior of temperature oscillations were quite different between at low rotations and at high rotations. Above experimental results means that the fluid flow and temperature profiles in the melt is not symmetric, and then the mode of the asymmetric is changed when rotation rates are changed. To compare with these experimental results, the fluid flow and temperature profiles at no rotation and 8 rpm of crucible rotation rates on the same size of crucible is calculated using a 3-dimensional numerical simulation. A finite different method is adopted for this simulation. 50×30×30 grids are used. The numerical simulation also showed that the velocity and flow profiles are changed when rotation rates change. Futhermore, the flow patterns and temperature profiles of both cases are not axisymmetric even though axisymmetric boundary conditions are used. Several cells appear at no rotation. The cells are formed by the unstable vertical temperature profiles (upper region is colder than lower part) beneath the free surface of the melt. When the temperature profile is combined with density difference (Rayleigh-B nard instability) or surface tension difference (Marangoni-B nard instability) on temperature, cell structures are naturally formed. Both sources of instabilities are coupled to the cell structures in the melt of the Czochralski process. With high rotation rates, the shape of the fluid field is changed to another type of asymmetric profile. Because of the velocity profile, isothermal lines on the plane vertical to the centerline change to elliptic. When the velocity profiles are plotted at the rotating view point, two vortices appear at the both sides of centerline. These vortices seem to be the main reason of the tracer behavior shown in the asymmetric velocity experiment. This profile is quite similar to the profiles created by the baroclinic instability on the rotating annulus. The temperature profiles obtained from the numerical calculations and Fourier transforms of it are quite similar to the results of the experiment. bove esults intend that at least two types of intrinsic instabilities can occur in the melt of Czochralski growing systems. Because the instabilities cause temperature fluctuations in the melt and near the crystal-melt interface, some defects may be generated by them. When the crucible size becomes large, the intensity of the instabilities should increase. Therefore, to produce large single crystals with good quality, the behavior of the intrinsic instabilities in the melt as well as the effects of the instabilities on the defects in the ingot should be studied. As one of the cause of the defects in the large diameter Silicon single crystal grown by the