• 제목/요약/키워드: sintering at low temperature sintered properties

검색결과 234건 처리시간 0.021초

$ZnWO_4$ 소결특성 및 고주파 유전특성 (Sintering and Microwave Dielectric Properties of $ZnWO_4$)

  • 이경호;김용철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.386-389
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    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

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$ZnWO_4$ 소결특성 및 고주파 유전특성 (Sintering and Microwave Dielectric Properties of $ZnWO_4$)

  • 이경호;김용철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.386-389
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    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

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적층형 유전체 필터를 위한 저온 소결용 마이크로파 유전체 유전특성 (The Microwave Dielectric properties of Low Temperature Firing Temperature Ceramics for Multilayer Dielectric Filter)

  • 윤중락;이헌용;이석원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.993-996
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    • 2001
  • In the composition of 0.16BaO-0.15(Nd$\_$0.87/,Bi$\_$0.13/)$_2$O$_3$-0.69TiO$_2$$.$Glass [EG-2782] 3wt% addition sintered at 1080$^{\circ}C$, we could obtained microwave properties of dielectric constant $\varepsilon$$\_$r/= 80.1, quality factor Q ${\times}$ f = 810 (at 3.5 GHz]) and temperature coefficient of resonant frequency $\tau$$\_$f/ = -1.3 [ppm/$^{\circ}C$]

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CuO가 PSN-PZT세라믹스의 저온소결특성에 미치는 영향 (Effect of CuO on low temperature sintering characteristics)

  • 우원희;류성림;류주현;박창엽;윤현상;홍재일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.232-235
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    • 2003
  • In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT ceramics were investigated as a function of CuO addition, At the 0.6wt% CuO added specimen sintered at $920^{\circ}C$, the most excellent mechanical quality factor and electromechanical coupling factor were obtained.

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종결정법을 이용한 저전압 ZnO 배리스터의 제조 및 전기적 특성 (Preparation of Low Voltage ZnO Varistor Using Seed Grain Method and Its Electrical Properties)

  • 강승구;오재희
    • 한국세라믹학회지
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    • 제25권5호
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    • pp.552-560
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    • 1988
  • ZnO low voltage varistor was obtained by varying a) the amount of seed grains, b) the size of seed grains, and c) sintering temperature. Also, the optimum condition for fabricating the ZnO seed grains was studied. Large ZnO seed grains were obtained by washing a ZnO sintered body containing 1m/of BaCO3 in boiling water. When the seed grains were added, abnormal grain growth occurred, and the varistor voltage sharply decreased. However, when more than 5w/o of seed grain content was added, the varistor voltage gradually increased. When 10w/o seed grains of 75~106${\mu}{\textrm}{m}$ were added and sintered for 2 hours at 1200 to 125$0^{\circ}C$, low voltage varistor properties with V1mA/mm of 19V/mm and nonlinear exponent ($\alpha$) of 12 occurred.

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층수 변화에 따른 적층형 압전액츄에이터의 압전특성 (Piezoelectric properties of multilayer actuator as a function of the number of multilayer)

  • 이갑수;이일하;류주현;정영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.270-271
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    • 2007
  • In this study, piezoelectric properties of PZW-PMN-PZT multilayer actuator sintered at $900^{\circ}C$ low temperature have been investigated. The multilayer actuator was fabricated by tape casting methods. The density above $8[g/cm^3]$ was obtained at all the specimens. Also, according to increasing the number of multilayer, effective electromechanical coupling factor$(k_{eff})$ showed increasing trend. The $k_{eff}$ of multilayer actuator showed the maximum value of 0.283 at 11 layer. However, according to increasing the number of multilayer, mechanical quality factor(Qm') showed decreasing tend. The Qm' of multilayer actuator showed the maximum value of 920 at 5 layer.

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Low-Temperature Sintering of Barium Calcium Zirconium Titanate Lead-Free Piezoelectric Ceramics

  • Fisher, John G.;Lee, Dae-Gi;Oh, Jeong-Hyeon;Kim, Ha-Nul;Nguyen, Dieu;Kim, Jee-Hoon;Lee, Jong-Sook;Lee, Ho-Yong
    • 한국세라믹학회지
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    • 제50권2호
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    • pp.157-162
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    • 2013
  • The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

소결온도와 B2O3첨가량에 따른 Mn첨가 PMN-PZT의 유전 및 압전특성의 변화 (Dielectric/piezoelectric Properties of Mn-Doped PMN-PZT with Variations of the Sintering Temperature and Addition of B2O3)

  • 신효순
    • 한국세라믹학회지
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    • 제41권9호
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    • pp.709-714
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    • 2004
  • 우수한 압전 특성을 나타내는 것으로 알려진 Mn 첨가 PMN-PZT의 저온소결 첨가제가 실험되었다. 저온소결 첨가제로는 B$_2$O$_3$가 사용되었고 소결온도와 B$_2$O$_3$ 첨가량의 변화가 소결성과 유전 및 압전특성의 변화에 미치는 영향을 조사하였다. B$_2$O$_3$ 첨가량과 소결온도를 변화시킨 결과 B$_2$O$_3$ 첨가량 2wt% 이하 100$0^{\circ}C$이하 조건에서 소결밀도가 증가하여 B$_2$O$_3$가 저온소결재로 작용하였다. 그러나 10$50^{\circ}C$ 이상에서는 주조성인 PMN-PZT보다 낮은 소결밀도를 나타내었다. B$_2$O$_3$ 첨가에 따른 유전상수($\varepsilon$$_{33}$ $^{T}$ )의 변화를 확인할 결과 B$_2$O$_3$ 2wt% 100$0^{\circ}C$ 조건에서 1000의 유전율을 나타내었다. B$_2$O$_3$ 첨가량이 전기-기계 결합계수(k$_{p}$ )와 압전상수(d$_{33}$ )에 큰 저하를 가져오지 않는 B$_2$O$_3$ 첨가 한계는 2wt% 이하로 나타났다. 이때, k$_{p}$ 는 약 50%, d$_{33}$ 는 약 300(${\times}$$10^{-12}$ C/N) 정도의 값을 얻을 수 있었다. B$_2$O$_3$ 첨가는 기계적 품질계수(Q$_{m}$ )의 증가를 가져왔으며 0.5wt% B$_2$O$_3$ 첨가 110$0^{\circ}C$ 소결 조건에서 1700의 품질계수를 나타내었다. 유전손실은 B$_2$O$_3$ 첨가에 따라 큰 변화 없이 0.5% 이하의 값으로 나타났다.

결정화유리의 첨가에 의한 BNT계 세라믹스의 저온소결 및 마이크로파 유전특성 (Sintering and Dielectric Properties of BaO-Nd2O3-TiO2 Microwave Ceramics with Glass-Ceramics)

  • 허동수;이우석;정순종;송재성;;류봉기
    • 한국세라믹학회지
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    • 제41권6호
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    • pp.444-449
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    • 2004
  • BaO-Nd$_2$O$_3$-TiO$_2$계 마이크로파 유전체 세라믹스에 결정화유리를 첨가하여 세라믹-결정화유리 복합체 유전재료를 제작하여, 적층 일체형 RF수동소자 모듈 구현을 위한 저온소결 유전재료로서의 응용가능성에 대해 검토하였다. BaO-Nd$_2$O$_3$-TiO$_2$계 유전체 세라믹스에 PbO-TiO$_2$-Al$_2$O$_3$-SiO$_2$ 조성의 결정화 유리를 5∼30 wt% 범위로 첨가하여 소결온도를 130$0^{\circ}C$에서 105$0^{\circ}C$까지 낮출 수 있었으며, 첨가량의 증가에 따라 유리의 연화로 인한 소결밀도의 증가 및 입성장이 뚜렷하게 관찰되었다. 특히, 결정화 유리를 20 wt% 이상 첨가하였을 경우, 105$0^{\circ}C$의 소결온도에서 95% 이상의 상대밀도를 갖는 양호한 소결체를 얻을 수 있었고, 이 때 유전을($\varepsilon$$_{r}$)은 72, 품질계수(Q-f)는 1500이었고, 공진주파수 온도계수($ au$$_{f}$)는 22ppm/$^{\circ}C$을 나타내었다. 이러한 높은 유전율은 유리속의 결정상 PbTiO$_3$의 존재에 기인한 것이다.

Zn-B-O 글라스 첨가에 의한 Ca[(Li1/3Nb2/3)0.2Ti0.8]O3-δ 세라믹스의 마이크로파 유전특성 (Microwave Dielectric Properties of Ca[(Li1/3Nb2/3)0.2Ti0.8]O3-δ Ceramics with Addition of Zn-B-O Glass Systems)

  • 인치승;김시연;여동훈;신효순;남산
    • 한국전기전자재료학회논문지
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    • 제29권12호
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    • pp.781-785
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    • 2016
  • With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.