• Korean Journal of Materials Research
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• v.11 no.3
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• pp.178-184
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• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.723-731
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• 1995

P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ samples were prepared with x=0.4~0.6 and small $\delta$. To minimize the extent of oxidative decomposition reaction which occurs during the preparation of this phase, two annealing steps were adopted : First, sintered samples of P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ are oxygenated under 100% $O_2$, which leads to a large $\delta$(e.g., $\delta$=1.8). Second, the resulting samples are deoxygenated under 0.1~1.0% $O_2$in $N_2$, lowering $\delta$ to desired values. This two-step annealing procedure minimized the extent of oxidative decomposition. However, even with the two-step annealing procedure, the oxidative decomposition of P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ cannot be completely suppressed if $\delta$ is to be reduced to maximize $T_{c}$. Electrical resistivity data show that $T_{c}$(onset) is a function of hole concentration in the Cu $O_2$layer, and the optimum hole concentration for the maximum $T_{c}$ is achieved when $Ca^{2+}$is substituted for $Y^{3+}$between 0.5 and 0.6 A $T_{c}$(onset)=80K has been observed for one such sample, and this is the highest $T_{c}$(onset) yet reported for this compound.ed for this compound.nd.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.543-549
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• 2003

In order to investigate the thermoelectric properties of $Zn_{k}$ $In_2$$O_{ 3＋k}$ homologous compounds, the samples of $Zn_{k}$ /$In_2$$O_{3＋k}$ / (k = integer between 1 and 9) were prepared by calcining the mixed powders of ZnO and $In_2$$O_3$fellowed by sintering at 1823 K for 2 hours in air, and their electrical conductivities and Seebeck coefficients were measured as a function of temperature in the range of 500 K to 1150 K. X-ray diffraction analysis of the sintered samples clarified that single-phase specimens were obtained for $Zn_{k} /$In_2$$O_{3＋k}$ with k = 3, 4, 5, 7, 8, 9. Electrical conductivity of the $Zn_{k}$ $In_2$$O_{3＋k}$ / decreased with increasing temperature, and decreased with increasing k for k $\geq$ 3. The Seebeck coefficient was negative at all the temperatures for all compositions, confirming that $Zn_{k}$ $In_2$$O_{3＋k}$ / is an n-type semiconductor. Absolute values of the Seebeck coefficient increased linearly with increasing temperature and increased with increasing k for k $\geq$ 3. The temperature dependence of the Seebeck coefficient indicated that Z $n_{k}$I $n_2$ $O_{3＋k}$ could be treated as an extrinsic degenerate semiconductor. Figure-of-merits of Z $n_{k}$I $n_2$ $O_{3＋k}$ were evaluated from the measured electrical conductivity and Seebeck coefficient, and the reported thermal conductivity. Z $n_{7}$ I $n_2$ $O_{10}$ has the largest figure-of-merit over all the temperatures, and its highest value was $1.5{\times}$10$^{-4}$ $K^{-1}$ at 1145 K.5 K.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1067-1072
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• 2003

The electrical stability of the varistor ceramics composed of Zn-Pr-Co-Cr-Dy oxides-based varistors was investigated at 0.0∼2.0 mol% Dy$_2$O$_3$ content under DC accelerated aging stress. The ceramic density was increased up to 0.5 mol% Dy$_2$O$_3$ whereas further addition of Dy$_2$O$_3$ decreased sintered ceramic density. The density sailently affected the stability due to the variation of conduction path. The nonlinearity of varistor ceramics was greatly improved above 45 in the nonlinear exponent and below nearly 1.0 ${\mu}$A by incorporating Dy$_2$O$_3$. Under 0.95 V$\_$1mA/150$^{\circ}C$/24 h stress state, the varistor ceramics doped with 0.5 mol% Dy$_2$O$_3$ exhibited the highest electrical stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current were -0.9%, -14.4%, and +483.3%, respectively. The variation rates of relative permittivity and dissipation factor were +7.1% and +315.4%, respectively. The varistors with further addition of Dy$_2$O$_3$ exhibited very unstable state resulting in the thermal runaway due to low density.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.874-880
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• 2003

The effect of h-BN content on microstructure, mechanical properties, and machinability of AlN-BN based machinable ceramics were investigated. The relative density of sintered compact decreased with increasing h-BN content. The four-point flexural strength also decreased from 238 MPa of monolith up to 182 MPa by the addition of 30 vol％ h-BN. Both low Young's modulus and residual tensile stress, formed by the thermal expansion coefficient difference between AIN and h-BN, might cause the strength drop in AlN-BN composite. The crack deflection, and pull-out phenomena increased by the plate-like h-BN. However, the fracture toughness decreased with h-BN content. The second phases, consisted of YAG and ${\gamma}$-Al$_2$O$_3$, were formed by the reaction between Al$_2$O$_3$ and Y$_2$O$_3$. During end-milling process, feed and thrust forces measured for AlN-(10～30) vol％ BN composites decreased with increasing h-BN particles, showing excellent machinability. Also, irrespective of h-BN content, relatively good surfaces with roughness less than 0.5 m (Ra) could be achieved within short lapping time.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.359-366
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• 2002

The purpose of this study is to investigate the properties of LSGM electrolyte and LSM cathode. The unit cell based on the optimum conditions and processing for high performance was fabricated and measured. The single phase of $LaGaO_3$ was obtained on sintering at $1500^{\circ}$ for 6h with composition of $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}와 (La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$. The grain size of the sintered body was about $10∼30{\mu}m$ and electrical conductivity was 0.13 S/cm measured at $800^{\circ}$. The single phase of $LaMnO_3$ structure in $(La1-xSrx)MnO_3$ system was obtained at x=0∼0.2 and the particle size of the synthesized powder was about 40 nm. The unit cell was prepared by firing at $1200^{\circ}$ for 1h with $(La_{0.9}Sr_{0.1})MnO_3$ cathode and 0.9NiO-0.1YSZ anode screen-printed on surfaces of $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ electrolyte. The grain size of the electrode was close to $1{\mu}m$ and the electrode had porous structure. The maximum power density of unit cell showed $0.3W/cm^2$ at $800^{\circ}$.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.846-850
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• 2002

A PMN-PT-BT/Ag composite was prepared by surface modification with MgO sol with hoping to suppress silver's migration during sintering. The mixture of PbO, $N_2O_5,\;TiO_2\;with\;Mg(NO_3)_2$ instead of MgO was ball milled, the solvent was removed and then the dried powders were calcined at 950$^{\circ}C$/1h. The calcined powder were treated with 3.0 mol% $Ag_2O$ and 1.0 wt% MgO sol and calcined at 550$^{\circ}C$/1h. The dielectrics sintered at 1000$^{\circ}C$/4h under a flowing oxygen showed the density of 7.84g/$cm^3$, the room temperature dielectric constant of 18400, the dielectric loss of 2.4%, the specific resistivity of $0.24{\times}10^{12}{\Omega}{\cdot}cm$. It also showed the bending strength of $120.7{\pm}11.26$ MPa and the fracture toughness of $0.87{\pm}0.002\;MPam^{1/2}$ which were comparable to commercial PZT. The microstructure sonsisted of grains of ∼4${\mu}m$. SEM and SIMS analysis showed that Ag grew as ∼1${\mu}m$ and excess MgO as ∼0.5${\mu}m$.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.890-895
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• 2002

Effect of the sintering time on the microwave dielectric properties of the layered Functionally Graded Materials(FGMs) of the Mg0.93Ca0.07TiO3(MCT) with (Ca0.3Li0.14Sm0.42)TiO3(CLST) ceramics was investigated. The dielectric constant of layered FGMs specimens showed a nearly constant value and did not change significantly with sintering time. The quality factor, however, was affected by the relative density and thermal stress developed in each dielectric layer. With an increase of the relative density and the decrease of the induced thermal stresses, quality factor of the layered FGMs specimens increased and the quality factor was incluenced sensitively by the change of compressive stress developed in MCT layers which had a lower thermal expansion coefficient than that of CLST. For the layered FGMs specimen sintered at 1300$^{\circ}C$ for 9h, the compressive stress developed in MCT layer showed the maximum value, which, in turn, the quality factor of the specimen was the minimum value.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.352-358
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• 2002

The variations of the properties of Sr and Mg added $LaGaO_3$ system electrolyte with the amount of the additive and the sintering condition were studied. Main phase was (La$_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$ phase for each compositions and the single phases $(La_{0.85}Sr_{0.15})(Ga_{0.85}Mg_{0.15})O_{3-\delta},(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O{3-\delta}$ were obtained with the decrease in the sintering temperature and Mg addition. Thermal expansion coefficient of the $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ decreased with the increase in the sintering temperature. Electric conductivity of electrolyte sintered at $1500^{circ}C$ for 1h was 0.14 S/cm at $800^{circ}C$ with 1 mA.

• Journal of the Korean Ceramic Society
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• v.39 no.9
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• pp.896-901
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• 2002

Since many process parameters of FHD(Flame Hydrolysis Deposition) are involved in forming multi-component amorphous silica film ($SiO_2-B_2O_3-P_2O_5-GeO_2$), it has not been easy to predict the optical, mechanical and thermal properties of deposited film from the simple process parameters, such as source flow rate. Furthermore, the prediction of final composition of film becomes even more difficult after sintering at high temperature due to the evaporation of volatile dopants. The motivation of the study was to clarify the quantitative relationship between simple process parameters such as the flow rate of source gases and resulting chemical composition of sintered film. Hence, the compositional analysis of silica soot by FTIR(Fourier Transformation Infrared Spectroscopy) and ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) under the control of the amount of dopant was carried out to obtain the quantitative composition. By measuring spectrum of absorbance from FTIR, the compositional change of B-O, Si-O, OH($H_2O$) in silica film was measured. The concentrations of these dopants were also measured by ICP-AES, which were compared with the FTIR result. The final quantitative relationship between simple process parameters and composition was deduced from the comparison between two results.