• 한국결정성장학회지
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• 제12권3호
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Korea-Australia Rheology Journal
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• 제13권4호
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• pp.197-203
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• 2001

We reported on the eletrorheological (ER) properties of several semiconducting polymers including poly (p-phenylene) (PPP), poly (acene quinone) radicals (PAQRs), microencapsulated polyaniline (MPANI) and polyaniline (PANI) those we synthesized. The yield stress dependence on electric field strength for the ER fluids using these semiconducting polymers was mainly examined. The yield stress, which is an important design parameter for ER fluids, was observed to satisfy a universal scaling function, allowing that yield stress data for all the ER fluids examined in this study collapse onto a single curve for a broad range of electric field strengths. The proposed scaling function incorporates both the polarization and conductivity models.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.234-235
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• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS (Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 1~10 slm Ar as the main flow gas. According to the increase of main carrier gas, surface fringes and flatness are improved. It shows the distribution of thickness is formed uniformly.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 펄프종이기술
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• 제37권5호통권113호
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• pp.63-69
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• 2005

This study was performed to introduce recently developed polyvinylamine as a wet-end process and paper strength improving aids. As a retention and drainage aids, high cationic charged polyvinylamine was more effective at the BCTMP and ONP stock condition than LBKP stock condition. As a dry tensile strength aid, dual system of polyvinylamine with anionic polyacrylamide was the best at the LBKP or ONP stock conditions. On the other hand, polyvinyl amine alone was better than dual system of polyvinylamine with anionic polyacrylamide at the BCTMP condition. As a wet tensile strength aid, polyvinylamine single system and dual system of polyvinylamine with anionic polyacrylamide were good at LBKP, BCTMP and ONP stock conditions. However, poly(aminoamide)-epichlorohydrin resin was good at LBKP and ONP stock conditions but efficiency of poly(aminoamide)-epichlorohydrin resin was remarkably decreased at BCTMP stock condition.

• Journal of Ginseng Research
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• 제23권2호
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• pp.74-80
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• 1999

인삼 접합자배의 자엽을 식물호르몬이 전혀 첨가되지 않은 MS기본배지에 배양한 결과 자엽의 기부에서 높은 빈도의 체세포배가 유기되었다. 체세포배의 형성 빈도는 접합자배 자엽의 성숙도에 따라서 차이가 있었는데 미숙배에서 성숙배로 진행됨에 따라 감소되는 경향을 보였다. 미숙자엽의 경우에는 표피세포의 윗 아래층들이 모두 성숙자엽의 세포보다 더 적거나 더 촘촘하였으며, 많은 세포들이 체세포배의 형성에 관여하였으나 뿌리의 형성이 어려운 다배상태로 유기되었다. 그러나 발아직적의 성숙자엽은 표피세포의 윗층만이 촘촘한 세포로 이루워 졌으며 뿌리의 형성이 가능한 체세포 단일배로 유기되었다. 이런 결과는 체세포배의 기원과 발육이 배발생시 사용한 자엽의 성숙도에 따라서 배발생에 관여한 세포들이 단일 혹은 다량상태인지에 따라서 결정된다는 것을 의미한다.

• 한국통신학회논문지
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• 제25권1B호
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• pp.183-192
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• 2000

본 논문에서는 전류펌핑 알고리즘을 이용한 클락 동기용 3.3V 단일 공급 전압하에서 3-250MHz 입력 록킹 범위를 갖는 2중 루프 구조의 CMOS PLL 회로를 설계하였다. 본 논문은 전압 제어 발진기 회로의 전압대 주파수의 선형성을 향상시키기 위한 전류펌핑 알고리즘을 이용한 PLL 구조를 제안한다. 설계된 전압 제어 발진기 회로는 75.8MHz-1GHz 의 넓은 주파수 범위에서 높은 성형성을 가지고 동작한다. 또한, 록킹 되었을 때 루프 필터 회로를 포함한 저하 펌프 회로의 전압 변동 현상을 막는 위상 주파수 검출기 회로를 설계하였다. 0.6$\mu\textrm{m}$ N-well single-poly triple metal CMOS 공정을 사용하여 모이 실험 한 결과, 125MHz의 입력 주파수를 갖고 1GHz의 동작 주파수에서 3.5$\mu\textrm{s}$의 록킹 시간과 92mW의 전력 소모를 나타내었다. 측정 결과 V-I 컨버터 회로를 포함한 VCO 회로의 위상 잡음은 100kHz의 옵셋 주파수에서 -100.3dBc/Hz를 나타내었다.

• 동의생리병리학회지
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• 제19권4호
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• pp.1039-1045
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• 2005

In order to evaluate the in vivo synergic effect of Eunkyo-san which was a traditional poly-herbal formula has been used in the treatment of respiratory diseases in Korea, with quinolone antibiotics, ciprofloxacin (CPFX), the viable bacterial number and histopathological changes were monitored after experimental respiratory infection with S. pneumoniae ATCC 6303. The obtained results were as follows: In CPFX groups, the viable bacterial numbers were significantly decreased compared to that of control group and these were more dramatically decreased compared to that of single treatment with CPFX, respectively in concomitant treated groups with Eunkyo-san. In control group, severe infiltration of inflammatory cells, hemorrhage and hypertrophy of alveolar linings were demonstrated at microscopical levels. However, these abnormal histopathological changes were significantly decreased compared to that of control group in CPFX groups, and these were more dramatically decreased compared to that of single treatment with CPFX, respectively in concomitant treated groups with Eunkyo-san. In CPFX groups, the LSA (luminal surface of alveoli $\%$) were significantly increased compared to that of control group and these were more dramatically decreased compared to that of single treatment with CPFX, respectively in concomitant treated groups with Eunkyo-san. According to these results, it is considered as the in vivo antibacterial activity of CPFX was dramatically increased by concomitant use of Eunkyo-san against S. pneumoniae ATCC 6303 infection of respiratory tract.

• 한국재료학회지
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• 제17권4호
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.