• Title/Summary/Keyword: single source precursor

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Influence of Carbonization Conditions in Hydrogen Poor Ambient Conditions on the Growth of 3C-SiC Thin Films by Chemical Vapor Deposition with a Single-Source Precursor of Hexamethyldisilane

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.22 no.3
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    • pp.175-180
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    • 2013
  • This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

Preparation of SnS Thin Films by MOCVD Method Using Single Source Precursor, Bis(3-mercapto-1-propanethiolato) Sn(II)

  • Park, Jong-Pil;Song, Mi-Yeon;Jung, Won-Mok;Lee, Won-Young;Lee, Jin-Ho;Kim, Hang-Geun;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3383-3386
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    • 2012
  • SnS thin films were deposited on glasses through metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions, using bis(3-mercapto-1-propanethiolato) tin(II) precursor without toxic $H_2S$ gas. The MOCVD process was carried out in the temperature range of $300-400^{\circ}C$ and the average grain size in fabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is in optimal range for harvesting solar radiation energy. The precursor and SnS films were characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

TDEAT single source를 사용한 TiN막의 특성평가

  • 김재호;이재갑;박상준;신현국;황찬용
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.28-33
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    • 1995
  • TiN 박막은 저온(<$500^{\circ}C$), 저압(1Torr)에서 Tetrakis(diethylamido)titanium[TDEAT, Ti(NEt2)4]single precursor를 사용하여 증착하였다. 증차고딘 박막은 SEM(Scanning Electron Microscopy)으로 surface morphology와 step coverage를 측정하였고, TEM(Transmission Electron Microscopy)분석결과 microcrystalline의 TiN을 확인하였다. XPS(X-ray Photoelectron Spectroscopy)분석결과에 따르면 $200-500^{\circ}C$구간에서는 $\beta$-hydogen elimination에 의한 반응이 일어나고 $600-700^{\circ}C$구간에서는 thermal decomposition에 의한 반응이 일어나고 있음을 알 수 있다. Carbon과 oxygen의 농도는 AES(Auger Electron Spectroscopy)를 사용하여 측정하였으며 온도가 감소할수록 carbon의 농도가 감소하는 경향을 보여주고 있다.

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Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

  • Lee, Sun-Sook;Lee, Eun-Seok;Kim, Seok-Hwan;Lee, Byung-Kook;Jeong, Seok-Jong;Hwang, Jin-Ha;Kim, Chang-Gyoun;Chung, Taek-Mo;An, Ki-Seok
    • Bulletin of the Korean Chemical Society
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    • v.33 no.7
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    • pp.2207-2212
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    • 2012
  • Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

Single Source Chemical Vapor Deposition of Epitaxial Cubic SiC Films on Si (입방형 탄화규소 박막의 적층 성장)

  • 이경원;유규상;구수진;김창균;고원용;조용국;김윤수
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.133-138
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    • 1996
  • Epitaxial cubic silicon carbide films have been deposited on carbonized Si(001) substrates using the single precursor 1, 3-disilabutane in the temperature range 900-$1000^{\circ}C$ under high vacuum conditions. The films grown were characterized by in situ RHEED, XPS, XRD, x-ray pole figure, SEM, and TEM. The results show that epitaxial cubic SiC films with smooth morphology and good crystallinity were formed in this temperature range. The single precursor 1, 3-disilabutane has been found suitable for the epitaxial growth of cubic SiC on Si(001) substrates.

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Acid-Catalyzed Hydrolysis of Hexacyanoferrate (III) to Prussian Blue via Sequential Mechanism

  • Youngjin Jeon
    • Journal of the Korean Chemical Society
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    • v.68 no.3
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    • pp.139-145
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    • 2024
  • This study aims to elucidate the mechanism involved in the hydrolysis of the hexacyanoferrate(III) complex ion (Fe(CN)63-) and the mechanism leading to the formation of Prussian blue (FeIII4[FeII(CN)6]3·xH2O, PB) in acidic aqueous solutions at moderately elevated temperatures. Hydrolysis constitutes a crucial step in generating PB through the widely used single-source or precursor method. Recent PB syntheses predominantly rely on the single-source method, where hexacyanoferrate(II/III) is the exclusive reactant, as opposed to the co-precipitation method employing bare metal ions and hexacyanometalate ions. Despite the widespread adoption of the single-source method, mechanistic exploration remains largely unexplored and speculative. Utilizing UV-vis spectrophotometry, negative-ion mode liquid chromatography-electrospray ionization-mass spectrometry (LC-ESI-MS), and a devised reaction, this study identifies crucial intermediates, including aqueous Fe2+/3+ ions and hydrocyanic acid (HCN) in the solution. These two intermediates eventually combine to form thermodynamically stable PB. The findings presented in this research significantly contribute to understanding the fundamental mechanism underlying the acid-catalyzed hydrolysis of the hexacyanoferrate(III) complex ion and the subsequent formation of PB, as proposed in the sequential mechanism introduced herein. This finding might contribute to the cost-effective synthesis of PB by incorporating diverse metal ions and potassium cyanide.

Fabrication and NOx Gas Sensing Properties of LaMeO3 (Me = Cr, Co) by Polymeric Precursor Method (Polymeric Precursor법에 의한 LaMeO3 (Me = Cr, Co)의 제조 및 NOx 가스 검지 특성)

  • Lee, Young-Sung;Shimizu, Y.;Song, Jeong-Hwan
    • Korean Journal of Materials Research
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    • v.21 no.8
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    • pp.468-475
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    • 2011
  • [ $LaMeO_3$ ](Me = Cr, Co) powders were prepared using the polymeric precursor method. The effects of the chelating agent and the polymeric additive on the synthesis of the $LaMeO_3$ perovskite were studied. The samples were synthesized using ethylene glycol (EG) as the solvent, acetyl acetone (AcAc) as the chelating agent, and polyvinylpyrrolidone (PVP) as the polymer additive. The thermal decomposition behavior of the precursor powder was characterized using a thermal analysis (TG-DTA). The crystallization and particle sizes of the $LaMeO_3$ powders were investigated via powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and particle size analyzer, respectively. The as-prepared precursor primarily has $LaMeO_3$ at the optimum condition, i.e. for a molar ratio of both metal-source (a : a) : EG (80a : 80a) : AcAc (8a) inclusive of 1 wt% PVP. When the as-prepared precursor was calcined at $700^{\circ}C$, only a single phase was observed to correspond with the orthorhombic structure of $LaCrO_3$ and the rhombohedral structure of $LaCoO_3$. A solid-electrolyte impedance-metric sensor device composed of $Li_{1.5}Al_{0.5}Ti_{1.5}(PO_4)_3$ as a transducer and $LaMeO_3$ as a receptor has been systematically investigated for the detection of NOx in the range of 20 to 250 ppm at $400^{\circ}C$. The sensor responses were able to divide the component between resistance and capacitance. The impedance-metric sensor for the NO showed higher sensitivity compared with $NO_2$. The responses of the impedance-metric sensor device showed dependence on each value of the NOx concentration.

A Fabrication of YBCO Single Crystal using Infiltration and Growth Method (용융침투성장법을 이용한 YBCO 단결정 제조)

  • Han, Sang-Chul;Jeong, Neyon-Ho;Han, Young-Hee;Sung, Tae-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.550-554
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    • 2007
  • Large and single-grain Y-Ba-Cu-O(YBCO) bulk superconductors have been fabricated by using a seeded infiltration and growth method. $Y_2BaCuO_5$(Y211) precursor pellets and $YBa_2Cu_3O_x$(Y123) liquid source pellets were prepared using commercial powder and were processed by infiltration and growth method to achieve low pore and high trapped field property. The superconductor properties of the single crystal are measured and analyzed in relation with the density and size of the Y211 particle in the Y123 matrix. An optimum processing condition is suggested based on the analyzed results.