• 한국진공학회지
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• 제19권3호
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• pp.217-223
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• 2010

유기금속화학기상증착법으로 적층 InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) 구조를 성장하여 n-i-n 구조의 적외선 수광소자를 제작하였으며, PL (photoluminescence) 발광 특성 및 암전류 특성을 분석하였다. 동일한 조건으로 양자점을 적층하였을 때 크기 및 밀도의 변화에 의한 이중 PL peak을 관찰하였으며, TMIn의 유량을 조절함으로써 단일 peak을 갖는 균일한 크기의 양자점 적층 구조를 성장할 수 있었다. 적외선 수광소자 구조를 성장함에 있어서, 상부의 n-형 GaAs의 성장 온도가 600도 이상인 경우 PL 발광 세기가 급격히 감소하였고 이에 따른 암전류의 증가를 관찰하였다. 0.5 V 인가 전압에서 암전류의 온도 의존성에 대한 활성화 에너지의 크기는 성장온도가 580도인 경우 106 meV이고, 650도의 경우는 48 meV로 급격이 낮아졌다. 이는 고온의 성장 온도에 의한 InAs 양자점과 $In_{0.1}Ga_{0.9}As$ 양자우물구조 계면에서의 열적 상호 확산에 의하여 비발광 천이가 증가되었기 때문이다.

• Advances in nano research
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• 제15권1호
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• pp.59-65
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• 2023

In this present article, the mechanical behavior of single-walled black phosphorene nanotubes (SW-αPNTs) is simulated using molecular dynamics (MD). The proposed model is subjected to the axial loading and the effects of morphological parameters, such as the mono-vacancy defect and strain rate on the tensile behavior of the zigzag and armchair SW-αPNTs are studied as a pioneering work. In order to assess the accuracy of the MD simulations, the stress-strain response of the current MD model is successfully verified with the efficient quantum mechanical approach of the density functional theory (DFT). Along with reproducing the DFT results, the accurate MD simulations successfully anticipate a significant variation in the stress-strain curve of the zigzag SW-αPNTs, namely the knick point. Predicting such mechanical behavior of SW-αPNTs may be an important design factor for lithium-ion batteries, supercapacitors, and energy storage devices. The simulations show that the ultimate stress is increased by increasing the diameter of the pristine SW-αPNTs. The trend is identical for the ultimate strain and stress-strain slope as the diameter of the pristine zigzag SW-αPNTs enlarges. The obtained results denote that by increasing the strain rate, the ultimate stress/ultimate strain are respectively increased/declined. The stress-strain slope keeps increasing as the strain rate grows. It is worth noting that the existence of mono-atomic vacancy defects in the (12,0) zigzag and (0,10) armchair SW-αPNT structures leads to a drop in the tensile strength by amounts of 11.1% and 12.5%, respectively. Also, the ultimate strain is considerably altered by mono-atomic vacancy defects.

• 대한전자공학회논문지SD
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• 제38권12호
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• pp.1-7
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• 2001

낮은 동작전압에서 안정하게 동작하고 고효율을 갖는 단층 폴리머 녹색광소자를 갖는 새로운 물질을 합성하였으며 이는 폴리머물질인 PC(B79)에 유기단분자인 전자수송성이 ?어난 NIDI와 정공수송성이 뛰어난 TTA를 분자분산하여 첨가색소인 C6의 도핑농도에 변화를 주어 스핀코팅으로 녹색발광소자를 제작하였다. 소자 구조는 glass/ITO/PC:TTA:NIDI:C6/cathode이고 음극전극으로 일함수가 낮은 Ca과 Mg 그리고 Ca/Al을 진공증착하여 전기적${\cdot}$광학적 특성을 비교조사하였다. C6의 도핑농도가 0.08mole%에서 양자효율이 최대인 0.52%를 얻었고 이것은 도핑하지 않을때보다 약 50배 높았고, 동작개시전압도 2.4V의 낮은 동작 개시전압에서 안정하게 동작하였다. 한편 PL과 EL측정결과 C6의 도핑농도를 변화하여도 발광파장의 최대값은 거의 일정하였다. PL강도의 최대발광파장은 495nm였고 EL강도의 최대발광파장은 520nm이고 FWHM은 약 70nm를 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• 대한임상검사과학회지
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• 제37권2호
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• pp.123-128
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• 2005

Magnetoencephalography (MEG) is the measurement of the magnetic fields produced by electrical activity in the brain, usually conducted externally, using extremely sensitive devices such as Superconducting Quantum Interference Device (SQUID). MEG needs complex and expensive measurement settings. Because the magnetic signals emitted by the brain are on the order of a few femtoteslas (1 fT = 10-15T), shielding from external magnetic signals, including the Earth's magnetic field, is necessary. An appropriate magnetically shielded room is very expensive, and constitutes the bulk of the expense of an MEG system. MEG is a relatively new technique that promises good spatial resolution and extremely high temporal resolution, thus complementing other brain activity measurement techniques such as electroencephalography (EEG), positron emission tomography (PET), single-photon emission computed tomography (SPECT) and functional magnetic resonance imaging (fMRI). MEG combines functional information from magnetic field recordings with structural information from MRI. The clinical uses of MEG are in detecting and localizing epileptic form spiking activity in patients with epilepsy, and in localizing eloquent cortex for surgical planning in patients with brain tumors. Magnetoencephalography may be used alone or together with electroencephalography, for the measurement of spontaneous or evoked activity, and for research or clinical purposes.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.641-646
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• 2005

To fabricate a single layer white organic light emitting diode (OLED), a novel non-conjugated blue emitting material PPPMA-co-DTPM copolymer was synthesized containing a perylene moiety unit with hole transporting and blue emitting ability and a triazine moiety unit with electron transporting ability. The devices were fabricated using PPPMA-co-DTPM $(PPPMA[70\;wt\%]:DTPM[30\;wt\%])$ copolymer by varying the doping concentrations of each red, green and blue fluorescent dye, by molecular-dispersing into Toluene solvent with spin coating method. In case of ITO/PPPMA-co-DTPM:TPB$(3\;mol\%):C6(0.04\;mol\%):NR(0.015\;mol\%)/Al$ structure, as they were molecular-dispersing into 30 mg/ml Toluene solvent, nearly-pure white light was obtained both (0.325, 0.339) in the CIE coordinates at 18 V and (0.335, 0.345) at 15 V. The turn-on voltage was 3 V, the light-emitting turn-on voltage was 4 V, and the maximum external quantum efficiency was $0.667\%$ at 24.5 V. Also, in case of using 40 mg/ml Toluene solvent, the CIE coordinate was (0.345, 0.342) at 20 V.

• 제어로봇시스템학회논문지
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• 제22권8호
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• pp.671-677
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• 2016

A Controller Area Network (CAN) is a serial communication protocol that is highly reliable and efficient in many aspects, such as wiring cost and space, system flexibility, and network maintenance. Therefore, it is chosen for the communication protocol between a single chip controller based on Field Programmable Gate Array (FPGA) and peripheral devices. In this paper, the design and implementation of CAN IP, which is written in VHSIC Hardware Description Language (VHDL), is presented. The implemented CAN IP is based on the CAN 2.0A specification. The CAN IP consists of three processes: clock generator, bit timing, and bit streaming. The clock generator process generates a time quantum clock. The bit timing process does synchronization, receives bits from the Rx port, and transmits bits to the Tx port. The bit streaming process generates a bit stream, which is made from a message received from a micro controller subsystem, receives a bit stream from the bit timing process, and handles errors depending on the state of the CAN node and CAN message fields. The implemented CAN IP is synthesized and downloaded into SmartFusion FPGA. Simulations using ModelSim and chip test results show that the implemented CAN IP conforms to the CAN 2.0A specification.

• Journal of Semiconductor Engineering
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• 제1권1호
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• pp.57-63
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• 2020

Complementary metal-oxide-semiconductor (CMOS) technology is now facing a power scaling limit to increase integration density. Since 1970s, multi-valued logic (MVL) has been considered as promising alternative to resolve power scaling challenge for increasing information density up to peta-scale level by reducing the system complexity. Over the past several decades, however, a power-scalable and mass-producible MVL technology has been absent so that MVL circuit and system implementation have been delayed. Recently, compact MVL device researches incorporating multiple-switching characteristics in a single device such as 2D heterojunction-based negative-differential resistance (NDR)/transconductance (NDT) devices and quantum-dot/superlattices-based constant intermediate current have been actively performed. Meanwhile, wafer-scale, energy-efficient and variation-tolerant ternary-CMOS (T-CMOS) technology has been demonstrated through commercial foundry. In this review paper, an overview for MVL development history including recent studies will be presented. Then, the status and its future research direction of MVL technology will be discussed focusing on the T-CMOS technology for peta-scale information processing in semiconductor chip.

• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Bulletin of the Korean Chemical Society
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• 제34권9호
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• pp.2609-2615
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• 2013

A series of fluorene-carbazole copolymers containing the pendant phosphor chromophore $Ir(absn)_2(acac)$ (absn: 2-(1-naphthyl)benzothiazole; acac: acetylacetone) were designed and synthesized via Yamamoto coupling. In the film state, these copolymers exhibited absorption and emission peaks at approximately 389 and 426 nm, respectively, which originated from the fluorene backbone. However, in electroluminescent (EL) devices, a significantly red-shifted emission at approximately 611 nm was observed, which was attributed to the pendant iridium(III) complex. Using these copolymers as a single emission layer, polymer light-emitting devices with ITO/PEDOT:PSS/polymer:DNTPD/TmPyPb/LiF/Al configurations exhibited a saturated red emission at 611 nm. The attached iridium(III) complex had a significant effect on the EL performance. A maximum luminous efficiency of 0.85 cd/A, maximum external quantum efficiency of 0.77, maximum power efficiency of 0.48 lm/W, and maximum luminance of 883 $cd/m^2$ were achieved from a device fabricated with the copolymer containing the iridium(III) complex in a 2% molar ratio.