• Progress in Superconductivity
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• v.6 no.1
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• pp.7-12
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• 2004

Due to the very fast switching speed of Josephson junctions, superconductive digital circuit has been a very good candidate fur future electronic devices. High-speed and Low-power microprocessor can be developed with Josephson junctions. As a part of an effort to develop superconductive microprocessor, we have designed an RSFQ 4-bit ALU (Arithmetic Logic Unit) in a pipelined structure. To make the circuit work faster, we used a forward clocking scheme. This required a careful design of timing between clock and data pulses in ALU. The RSFQ 1-bit block of ALU used in this work consisted of three DC current driven SFQ switches and a half-adder. We successfully tested the half adder cell at clock frequency up to 20 GHz. The switches were commutating output ports of the half adder to produce AND, OR, XOR, or ADD functions. For a high-speed test, we attached switches at the input ports to control the high-speed input data by low-frequency pattern generators. The output in this measurement was an eye-diagram. Using this setup, 1-bit block of ALU was successfully tested up to 40 GHz. An RSFQ 4-bit ALU was fabricated and tested. The circuit worked at 5 GHz. The circuit size of the 4-bit ALU was 3 mm ${\times}$ 1.5 mm, fitting in a 5 mm ${\times}$ 5 mm chip.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.44-47
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• 2003

There are several simulation programs in studying superconductor RSFQ (Rapid Single flux Quantum) electronic devices, which include WRspice, WinS, PSCAN, and JSIM. Even though different research groups use different simulation programs, it is not well known about which program gives the simulation results closer to the measurement values. In this work, we used both WRspice and WinS to simulate RSFQ OR gate and to compare the results from the different simulations. This comparison would help in deciding which program is better in the RSFQ circuit design. In the confluence buffer, which is the one of the main components of the DR gate, the measured bias margins were ${\times}23.2%$, while the margins from the simulations were ${\pm}35.56%$ from WRspice and it 53.1% from WinS. However, with the actual fabricated circuit parameters WRspice gave ${\pm}27%$. In WinS the circuit did not operate. We concluded that WRspice is more reliable.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.237-241
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• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.17-20
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• 2005

We has designed, fabricated, and measured a Single flux quantum (SFQ) toggle flip-flop (TFF). The TFF is widely used in superconductive digital electronics circuits. Many digital devices, such as frequency counter, counting ADC and program counter be used TFF Specially, a program counter may be constructed based on TFF We have designed the newly TFF and obtained high bias margins on test. In this work, we used two circuit simulation tools, WRspice and Julia, as circuit optimization tools. We used XIC for a layout tool. Newly designed TFF had minimum bias margins of +/- $37\%$ and maximum bias margins of +/-$37\%$(enhanced from +/- $37\%$). The designed circuits were fabricated by using Nb technology The test results showed that the re-optimized TFF operated correctly on 100kHz and had a very wide bias margins of +/- $53\%$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.663-666
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• 2007

High-efficiency red phosphorescent OLEDs employing a novel red emitter and a multifunctional oligofluorene host are reported. With qazIr(acac) as the red phosphorescent dopant, a maximum external quantum efficiency of 19% and maximum power efficiency of 11 lm/W are achieved. In addition, single layer devices using such host and dopant materials have efficiencies up to 13%.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.123-126
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• 2003

RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32％.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.1-6
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• 2007

As very sensitive magnetic field sensors, superconducting quantum interference devices (SQUIDs) are used to measure magnetic field signals from the human heart. By analyzing these cardiomagnetic signals, functional diagnoses of heart can be done. In order to measure weak biomagnetic signals, we need a multichannel SQUID array with sensor coverage large enough to cover the whole heart to enable the measurement in a single position setting. In this paper, we review the recent development of SQUID systems for measuring cardiomagnetic fields, with special emphasis on SQUID types.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.182-182
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• 2014

Multiferroic materials have attracted much attention due to their own fascinating fundamental physical properties and potential technological applications to magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because the enhanced ferromagnetism was found by the Fe-site ion substitution with magnetic ions. The structural, the magnetic and the ferroelectric properties of polycrystalline $BiFe_{1-x}Ni_xO_3$ (x=0, 0.01, 0.02, 0.03 and 0.05), which were prepared by the solid-state reaction and the rapid-sintering method, have been investigated. The x-ray diffraction patterns reveal that all the samples are in single phase and show rhombohedral structure with R3c space group. The magnetic properties are enhanced according to the doping content. The Ni-doped $BiFeO_3$ samples exhibit lossy P-E loop due to the oxygen vacancy. The leakage current density of Ni-doped samples (x=0.01 and 0.02) is increased by four orders of magnitude. On the other hand, the x=0.03 and 0.05 samples show the relative reduction of the leakage current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• Korean Journal of Optics and Photonics
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• v.32 no.2
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• pp.55-61
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• 2021

The lateral-mode characteristics of 850-nm GaAs/(Al,Ga)As multiple-quantum-well laser diodes and their influence on the kinks in output optical power are investigated. For the investigation, self-consistent electro-thermal-optical simulation and measurement of fabricated devices are used. From this investigation, the optimal P-cladding thickness that provides single-lateral-mode operation is determined, so that high beam quality can be achieved even at high output powers.