• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• Applied Science and Convergence Technology
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• 제27권2호
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• pp.42-45
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• 2018

Photovoltaic and optoelectronic devices based on hybrid metal halide perovskites ($MAPbX_3$; $MA=CH_3NH_3{^+}$, $X=Cl^-$, $Br^-$, or $I^-$) are rapidly improving in power conversion efficiency. Also, during recent years, perovskite single crystals have emerged as promising materials for high-efficiency photovoltaic and optoelectronic devices because of their low defect density. Here we show that the light soaking effect of mixed halide perovskite ($MAPbBr_{3-x}I_x$) single crystals can be explained using photoluminescence, time-resolved photoluminescence, and Raman scattering measurements. Unlike Br-based single crystal, Br/I mixed single crystal show a strong light soaking effect under laser irradiation condition that was related to the existence of multiple phases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1271-1274
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• 1995

In this paper, design feature and operation characteristics of compact Ruby laser for plasma diagonostics are described. A linear Xe flashlamp and a single elliptical cavity are adopted as optical pumping system. With charging energy of 484J, the maximum output energy of 170mJ, laser pulse width $110{\mu}s$, and slope efficiency 0.09% were obtained. If Q-switch system is added to this laser, we suppose this laser will be quite enough for diagonizing plasma.

• 한국정보통신학회논문지
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• 제8권4호
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• pp.946-949
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• 2004

분포궤환 색소레이저(DFDL： Distributed feedback Dye Laser)로부터 80 uJ의 단일 극초단 펄스를 얻고, 이를 2단의 증폭기와 betune cell에 의한 다단 증폭으로 높은 출력을 얻은 후 BBO를 사용, 자외선 영역의 제 2고조파를 얻었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 춘계종합학술대회
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• pp.339-341
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• 2004

Self Q-switching에 의한 분포궤환 색소레이저(DFDL: Distributed Feedback Dye Laser)로부터 80uJ의 단일 극초단 펄스를 얻고, 이를 2단의 증폭기와 betune cell에 의한 3단 증폭으로 높은 출력을 얻은 후 BBO를 사용, 자외선 영역의 제 2고조파를 얻었다.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.150-155
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• 2003

Femtosecond laser ablation mechanism was systematically investigated on sodalime glass in ambient conditions. The ablation crater diameter was measured for varying numbers of laser pulses as for varying well as the laser fluence. The analysis of the results with a one dimensional spatial Gaussian fluence distribution reveals that the inherent ablation mechanism has been altered from a multi-photon process to a single photon excitation due to defect sites that have been accumulated by successive laser pulses. Furthermore, the transition between the two regimes was found to be a function of both the laser fluence and the number of laser shots.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.905-906
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• 2013

• 한국세라믹학회지
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• 제32권2호
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• pp.270-278
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• 1995

Nd : YAl3(BO3)4 (NYAB) single crystal has been developed for green laser. In this experiment, we found K2O/3MoO3/0.5B2O3 to be a suitable flux for NYAB crystal growth, and grew NYAB crystal by TSSG method using this flux. By varying the cooling rate of solution, seed orientation, and rotation speed, the effects of these growth conditions on the crystal quality and its morphology were examined. Suitable growth conditiions were a cooling rate slower than 2.4$^{\circ}C$/day, the rotation speed of 25~30 rpm, and the <001> seed orienttion. The phases of grown crystal, coexisting and volatile materials were investigated by X-ray diffraction. In addition, the possiblity of laser action was examined by UV analysis.

• Journal of information and communication convergence engineering
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• 제14권3호
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• pp.147-152
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• 2016

In radio-over-fiber (RoF) systems, nonlinear compensation is essential to improve performance. Among the several existing nonlinear compensation techniques, we investigate a predistortion technique for a directly modulated laser in an RoF system. First, we obtain the input-to-output response of a directly modulated laser at 160, 820, and 1,540 MHz. The results show that the laser response is dependent on the frequency band. Second, we design an optimal predistortion circuit to compensate for the nonlinear responses of three frequency bands. We design the predistortion circuit with two options: each predistortion circuit for each frequency band and one single predistortion circuit for all the three frequency bands. Finally, we present the simulation results of the predistortion system obtained using a commercial simulator. These results show that the third intermodulation distortion (IMD3) is improved by 0.6-9 dB for the three frequency bands with only a single predistortion circuit.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.1001-1003
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• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.