• 한국응용과학기술학회지
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• 제31권4호
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• pp.595-601
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• 2014

NATM의 미세 구조는 SEM, FT-IR, 인장특성, 그리고 [NCO]/[OH]의 mole %, 입도분석에 의해 측정하였다. 친환경적인 NATM에 관한 관심이 고조됨에 따라 스테인레스 등의 금속코팅에 더욱더 중요한 무용제 도료의 발전을 이끈다. 우리는 스테인레스 스틸의 부식을 방지할 수 있는 NATM(New Austria Tunnel Method)의 수지를 합성하였다. 폴리우레탄과 에폭시로 합성한 혼성 수지는 일반적 NATM 수지와 도료와 비교하여 강도와 내구력이 매우 양호하다. 혼성수지는 폴리올, 에폭시, MDI, 실리콘 계면활성제, 촉매, 가교제, 충전제로 구성된다. 충전제인 fume silica는 경화속도를 가속시킬 뿐만 아니라 열적 장벽으로 물성이 우수함을 나타냈다. NATM 수지의 기계적 특성은 [NCO]/[OH]의 mole%와 fume silica가 증가함에 따라 강도가 증가하였다. 결론적으로 가교제와 fume silica가 함유된 혼성수지의 미세구조는 스테인레스 스틸같은 금속물질의 열경화코팅을 위한 좋은 물질이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.