• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.32 no.5
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• pp.72-79
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• 2000

On the other hand, the fiber orientation at the surface and middle layer of the sheet controls the bending stiffness of paperboard. Therefore, a reliable measurement of paper surface fiber orientation gives us a magnificent tool to investigate and predict paper curling and cockling tendency, and provides the necessary information to fine-tune the manufacturing process for optimum quality. Many papers, especially heavily calendered and coated grades, do resist liquid and gas penetration very much, being beyond the measurement range of the traditional instruments or resulting inconveniently long measuring time per sample. The increased surface hardness and use of filler minerals and mechanical pulp make a reliable, non-leaking sample contact to the measurement head a challenge of its own. Paper surface coating causes, as expected, a layer which has completely different permeability characteristics compared to the other layers of the sheet. The latest developments in sensor technologies have made it possible to reliably measure gas flow n well controlled conditions, allowing us to investigate the gas penetration of open structures, such as cigarette paper, tissue or sack paper, and in the low permeability range analyze even fully greaseproof papers, silicon papers, heavily coated papers and boards or even detect defects in barrier coatings! Even nitrogen or helium may be used as the gas, giving us completely new possibilities to rank the products or to find correlation to critical process or converting parameters. All the modern paper machines include many on-line measuring instruments which are used to give the necessary information for automatic process control systems. Hence, the reliability of this information obtained from different sensors is vital for good optimizing and process stability. If any of these on-line sensors do not operate perfectly as planned (having even small measurement error or malfunction), the process control will set the machine to operate away from the optimum, resulting loss of profit or eventual problems in quality or runnability. To assure optimum operation of the paper machines, a novel quality assurance policy for the on-line measurements has been developed, including control procedures utilizing traceable, accredited standards for the best reliability and performance.

• Nuclear Engineering and Technology
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• v.53 no.11
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• pp.3790-3797
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• 2021

Although the individual channel readout method can improve the performance of PET detectors with pixelated photo-sensors, such as silicon photomultiplier (SiPM), this method leads to a significant increase in the number of readout channels. In this study, we proposed a novel multiplexing method that could effectively reduce the number of readout channels to reduce system complexity and development cost. The proposed multiplexing circuit was designed to generate bipolar pulses with different zero-crossing points by adjusting the time constant of the high-pass filter connected to each channel of a pixelated photo-sensor. The channel position of the detected gamma-ray was identified by estimating the width between the rising edge and the zero-crossing point of the bipolar pulse. In order to evaluate the performance of the proposed multiplexing circuit, four detector blocks, each consisting of a 4 × 4 array of 3 mm × 3 mm × 20 mm LYSO and a 4 × 4 SiPM array, were constructed. The average energy resolution was 13.2 ± 1.1% for all 64 crystal pixels and each pixel position was accurately identified. A coincidence timing resolution was 580 ± 12 ps. The experimental results indicated that the novel multiplexing method proposed in this study is able to effectively reduce the number of readout channels while maintaining accurate position identification with good energy and timing performance. In addition, it could be useful for the development of PET systems consisting of a large number of pixelated detectors.

• Journal of the Korean Society of Radiology
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• v.17 no.6
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• pp.897-902
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• 2023

The purpose of this paper is to analyze the characteristics of Silicon Photomultiplier (SiPM) for the realization of high-sensitivity radiation detection in portable detectors. Portable X-ray detectors offer the advantage of quickly accessing the patient's location and obtaining real-time images, allowing physicians to perform rapid diagnoses. However, this mobility comes with challenges in achieving accurate radiation detection. In existing detectors, SiPM is used for a simple purpose of detecting X-ray triggers. To verify the feasibility of high-sensitivity X-ray detection through SiPM, seven types of SiPM sensors were compared and selected, and their characteristics were analyzed. The SiPM used in the final test demonstrated the ability to distinguish signals at the ultra-low radiation level of 10 nGy, and it was observed that the slope of the signal rise curve varies with the X-ray tube voltage. Utilizing the characteristics of SiPM, which exhibits changes in signal level and duration with X-ray dose, it appears possible to achieve high-sensitivity measurements for X-ray detection.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.342-349
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• 2002

New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

• Journal of Astronomy and Space Sciences
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• v.25 no.4
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• pp.435-444
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• 2008

High energy charged particles are trapped by geomagnetic field in the region named Van Allen Belt. These particles can move to low altitude along magnetic field and threaten even low altitude spacecraft. Space Radiation can cause equipment failures and on occasions can even destroy operations of satellites in orbit. Sun sensors aboard Science and Technology Satellite (STSAT-l) was designed to detect sun light with silicon solar cells which performance was degraded during satellite operation. In this study, we try to identify which particle contribute to the solar cell degradation with ground based radiation facilities. We measured the short circuit current after bombarding electrons and protons on the solar cells same as STSAT-1 sun sensors. Also we estimated particle flux on the STSAT-l orbit with analyzing NOAA POES particle data. Our result clearly shows STSAT-l solar cell degradation was caused by energetic protons which energy is about 700keV to 1.5MeV. Our result can be applied to estimate solar cell conditions of other satellites.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.43-49
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• 2000

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.17-24
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• 1996

Planar multi-junction thermal converters were fabricated for precise measurements of the ac voltage and current by an ac-dc transfer method. A heater and a thermocouple array were fabricated onto a sandwiched membrane, $Si_{3}N_{4}$ (200 nm) / $SiO_{2}$ (400 nm) / $Si_{3}N_{4}$ (200 nm), a thickness of $0.8\;{\mu}m$ and a size of $2{\times}4\;mm^{2}$, which is supported by a surrounding frame. The NiCr heater is located at the center of the membrane vertically. Hot junctions of $48{\sim}156$ pairs of thermocouples (Cu-CuNi44) are located near or onto the heater, and cold junctions are located onto the silicon frame. Output of the thermal converters for 10 mA dc input was $76\;mV{\sim}382\;mV$ dependent on a model, and short term stability of the outputs was ${\pm}5{\sim}15\;ppm$/ 10 min with 5 mA dc input. Responsivity in air was in the range of $3.9{\sim}14.5V/W$. Responsivity of the model BF48 in air which has 48 thermocouples was 2 times or greater than that of 3 dimensional multi-junction thermal converter in vacuum which has 56 thermocouples. AC-DC transfer differences with an input of 10 mA or less were less than ${\pm}1\;ppm$ in the frequency range from 5 Hz to 2 kHz, and about $2{\sim}3\;ppm$ at 5 kHz and 10 kHz.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.