• Title/Summary/Keyword: silicon sensor

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A Touch-sensitive Display with Embedded Hydrogenated Amorphous-silicon Photodetector Arrays (비정질 실리콘 광센서를 이용한 터치 감응 디스플레이 설계 및 제작)

  • Lee, Soo-Yeon;Park, Hyun-Sang;Han, Min-Koo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.11
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    • pp.2219-2222
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    • 2009
  • A new touch-sensitive hydrogenated amorphous silicon(a-Si:H) display with embedded optical sensor arrays is presented. The touch-sensitive panel operation was successfully demonstrated on a prototype of 16-in. active-matrix liquid crystal display (AMLCD). The proposed system provides the finger touched point without the real-time image processing of information of the captured images. Due to the simple architecture of the system, we expect the introduction of large-area touch-sensitive display panels.

SOI Image Sensor Removed Sources of Dark Current with Pinned Photodiode on Handle Wafer (ICEIC'04)

  • Cho Y. S.;Lee C. W.;Choi S. Y.
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.482-485
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    • 2004
  • We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

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Fabrication and Characterization of Silicon Devices for Flow Measurement (II) (흐름측정용 실리콘 소자의 제작 및 특성 평가 (II))

  • Ju, B.K.;Ko, C.G.;Kim, C.J.;Tchah, K.H.;Oh, M.H.
    • Journal of Sensor Science and Technology
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    • v.3 no.1
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    • pp.12-18
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    • 1994
  • In this study, we fabricated and characterized a calorimetric-type flow sensing element using a micromachined silicon substrate. The cooling and heating effects resulted from the gas flow were measured by two temperature sensors located at both sides of the heating resistor, and the insulator diaphragm was employed as a substrate in order to improve thermal isolation. The sensor generated $0{\sim}378.4mV$ output signal under 10V bridge-applied voltage when the nitrogen gas was passed on the sensor surface having a mass flow rate of $0{\sim}0.25grs/min$, and reached to the stable operating condition within 10 seconds.

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Application Utility Analysis of Series-cascaded Ring Resonators Based on SOI Slot Optical Waveguides in Integrated Optical Biochemical Sensor (SOI 슬롯 광도파로 기반 캐스케이드 링 공진기 바이오·케미컬 집적광학 센서의 효용성 해석)

  • Jang, Jaesik;Jung, Hongsik
    • Journal of Sensor Science and Technology
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    • v.31 no.5
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    • pp.353-359
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    • 2022
  • This study investigated via computational analysis the application utility of series-cascaded ring resonators based on silicon-on-insulator (SOI) slot optical waveguides in integrated optical biochemical sensors. The radii of the two rings in the series-cascaded ring resonators were 59.4 ㎛ and 77.6 ㎛ respectively, and the coupling distance was 0.5 ㎛. The series-cascaded ring resonators were computationally analyzed using FIMMProp and PICWave numerical software. The free spectral range (FSR), full width at half maximum (FWHM), sensitivity, and quality-factor (Q-factor) of the series-cascaded ring resonators were 12.2 nm, 0.134 nm, 4100 nm/RIU, and 11580, respectively, and the measurement range was calculated to be slightly smaller than 3×10-3 RIU. Although the measurement range was smaller than that of the single ring resonator, upon considering other characteristic parameters, the series-cascaded ring resonators are found to be more effective as integrated sensors than single ring resonators.

Design and fabrication of micro force sensor using MEMS fabrication technology (MEMS 제작기술을 이용한 미세 힘센서 설계 및 제작)

  • 김종호;조운기;박연규;강대임
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.05a
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    • pp.497-502
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    • 2002
  • This paper describes a design methodology of a tri-axial silicon-based farce sensor with square membrane by using micromachining technology (MEMS). The sensor has a maximum farce range of 5 N and a minimum force range of 0.1N in the three-axis directions. A simple beam theory was adopted to design the shape of the micro-force sensor. Also the optimal positions of piezoresistors were determined by the strain distribution obtained from the commercial finite element analysis program, ANSYS. The Wheatstone bridge circuits were designed to consider the sensitivity of the force sensor and its temperature compensation. Finally the process for microfabrication was designed using micromachining technology.

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A Study on Characteristics of Angular Rate Sensor using Real Vehicle (실차 적용을 통한 각속도센서 특성 연구)

  • Kim, Byeong-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.7
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    • pp.1218-1223
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    • 2007
  • A surface micro machined angular rate sensor utilizing a vibrating MEMS structure on a silicon has been developed. These tuning fork angular rate sensors are extremely rugged, inherently balanced, and easy to fabricate. The device is fabricated using a temperature compensation method based on automatic gain control technique. A linearity of approximately 0.6%, limited by the on-chip electronics has been obtained with this new sensor. Tests of the sensor demonstrate that its performance is equivalent to that required for implementation of a yaw control system. Vehicle handling and safety are substantially improved using the sensor to implement yaw control.

Si PIN Radiation Sensor with CMOS Readout Circuit

  • Kwon, Yu-Mi;Kang, Hee-Sung;Lee, Jung-Hee;Lee, Yong Soo
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.73-81
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    • 2014
  • Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

A Compact Low-Power Shunt Proximity Touch Sensor and Readout for Haptic Function

  • Lee, Yong-Min;Lee, Kye-Shin;Jeong, Taikyeong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.3
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    • pp.380-386
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    • 2016
  • This paper presents a compact and low-power on-chip touch sensor and readout circuit using shunt proximity touch sensor and its design scheme. In the proposed touch sensor readout circuit, the touch panel condition depending on the proximity of the finger is directly converted into the corresponding voltage level without additional signal conditioning procedures. Furthermore, the additional circuitry including the comparator and the flip-flop does not consume any static current, which leads to a low-power design scheme. A new prototype touch sensor readout integrated circuit was fabricated using complementally metal oxide silicon (CMOS) $0.18{\mu}m$ technology with core area of $0.032mm^2$ and total current of $125{\mu}A$. Our measurement result shows that an actual 10.4 inches capacitive type touch screen panel (TSP) can detect the finger size from 0 to 1.52 mm, sharply.

Development of a Real-time Radiation Level Monitoring Sensor for Building an Underwater Radiation Monitoring System (수중 방사선 감시체계 구축을 위한 실시간 방사선 준위 모니터링 센서 개발)

  • Park, Hye Min;Joo, Koan Sik
    • Journal of Sensor Science and Technology
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    • v.24 no.2
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    • pp.96-100
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    • 2015
  • In the present study, we developed a real-time radiation-monitoring sensor for an underwater radiation-monitoring system and evaluated its effectiveness using reference radiation sources. The monitoring sensor was designed and miniaturized using a silicon photomultiplier (SiPM) and a cerium-doped-gadolinium-aluminum-gallium-garnet (Ce:GAGG) scintillator, and an underwater wireless monitoring system was implemented by employing a remote Bluetooth communication module. An acrylic water tank and reference radiation sources ($^{137}Cs$, $^{90}Sr$) were used to evaluate the effectiveness of the monitoring sensor. The underwater monitoring sensor's detection response and efficiency for gamma rays and beta particles as well as the linearity of the response according to the gammaray intensity were verified through an evaluation. This evaluation is expected to contribute to the development of base technology for an underwater radiation-monitoring system.

A Design and Manufacturing of Two Types of Micro-grippers using Piezoelectric Actuators for the Micromanipulation (미세 조작을 위한 압전 구동 집게의 설계 및 제작)

  • 박종규;문원규
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.246-250
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    • 2003
  • In this study, two new types of micro-grippers in which micro-fingers are actuated by piezoelectric multi-layer benders and stacks are introduced for the manipulation of micrometer-sized objects. First, we constructed a 3-chopstick-mechanism tungsten gripper, which is composed of three chopsticks: two are designed to grip micro-objects, and tile third is used to help grasp and release the objects through overcoming especially electrostatic force among some surface effects including electrostatic, van der Waals forces and surface tension. Second, a 2-chopstick-mechanism silicon micro-gripper that uses an integrated force sensor to control the gripping force was developed. The micro-gripper is composed of a piezoelectric multilayer bender for actuating the gripper fingers, silicon fingertips fabricated by use of silicon-based micromachining, and supplementary supports. The micro-gripper is referred to as a hybrid-type micro-gripper because it is composed of two main components; micro-fingertips fabricated using micromachining technology to integrate a very sensitive force sensor for measuring the gripping force, and piezoelectric gripper finger actuators that are capable of large gripping forces and moving strokes. The gripping force signal was found to have a sensitivity of 667 N/V. To the design of each of components of both of the grippers. a systematic design approach was applied, which made it possible to establish the functional requirements and design parameters of the micro-grippers. The micro-grippers were installed on a manual manipulator to assess its performance in tasks such as moving micro-objects from one position to a desired position. The experiment showed that the micro-grippers function effectively.

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