• Title/Summary/Keyword: silicon oxidation

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원자층증착법을 이용한 Y2O3 박막 형성 및 저항 스위칭 특성

  • Jeong, Yong-Chan;Seong, Se-Jong;Lee, Myeong-Wan;Park, In-Seong;An, Jin-Ho;Rao, Venkateswara P.;Dussarrat, Christian;Noh, Wontae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.229.2-229.2
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    • 2013
  • Yttrium oxide (Y2O3)는 band gap이 5.5 eV 정도로 상대적으로 넓고, 굴절상수가 1.8, 유전율이 10~15, Silicon 과의 격자 불일치가 작은 특성을 가지고 있다. 또한 녹는점이 높아 열적으로 안정하기 때문에 전자소자 및 광학소자에 다양하게 응용되는 물질이다. Y2O3 박막은 다양한 방법으로 증착할 수 있는데, 그 방법에는 e-beam evaporation, laser ablation, sputtering, thermal oxidation, metal-organic chemical vapor deposition, and atomic layer deposition (ALD) 등이 있다. ALD는 기판 표면에 흡착된 원자들의 자기 제한적 반응에 의하여 박막이 증착되기 때문에 박막 두께조절이 용이하고 step coverage와 uniformity 측면에서 큰 장점이 있다. 이전에는 Y(thd)3 and Y(CH3Cp)3 와 같은 금속 전구체를 이용하여 ALD를 진행하여, 증착 속도가 낮고 defect이 많아 non-stoichiometric한 조성의 박막이 증착되는 문제점이 있었다. 이번 연구에서는, (iPrCp)2Y(iPr-amd)와 탈이온수를 사용하여 Y2O3 박막을 증착하였다. Y2O3 박막 증착에 사용한 Y 전구체는 상온에서 액체이고 $192^{\circ}C$ 에서 1 Torr의 높은 증기압을 갖는다. Y2O3 박막 증착을 위하여 Y 전구체는 $150^{\circ}C$ 로 가열하여 N2 gas를 이용하여 bubbling 방식으로 공정 챔버 내로 공급하였다. Y2O3 박막의 ALD window는 $250{\sim}350^{\circ}C$ 였으며, Y 전구체의 공급시간이 5초에 다다르자 더 이상 증착 두께가 증가하지 않는 자기 제한적 반응을 확인할 수 있었다. 그리고 증착된 Y2O3 박막의 특성 분석을 위해 Atomic force microscopy (AFM)과 X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) 를 진행하였다. 박막의 Surface morphology 는 매끄럽고 uniform 하였으며, 특히 고체 금속 전구체를 사용했을 때와 비교하여 수산화물이 거의 없는 박막을 얻을 수 있었다. 그리고 조성 분석을 통해 증착된 Y2O3 박막이 stoichiometric하다는 것을 알수 있었다. 또한 metal-insulator-metal (MIM) 구조 (Ru/Y2O3/Ru) 의 resistor 소자를 형성하여 저항 스위칭 특성을 확인하였다.

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The effect and stability of plant extract ingredient as uv absorber (자외선 흡수제로서의 식물추출성분의 안정성과 효과)

  • 김경동;이용두;박성순;윤성화;이석현
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.26 no.1
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    • pp.41-58
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    • 2000
  • Recently the harmfulness of W radiation is in creasing due to encironmental pollution. Environmental population may also play a role in global decrease of ozone layer, A major consequence of ozone depletion is increase in solar ultra violet radiation received at the earth's surface excessive exposure to W radiation cause a lot of problems in our skin. Plant extract that possess antioxidative activities has been reported to retard the oxidation process in product to which they have been added. Plant are alived under solar light. So it is expect the plants have so many protection mechanisms and UV absorbent ingredients against ultra violet radiation such as UVB, UVA. Plant extract which were flavonoids, alkaloids and others could be transformed into UV absorber by chemical modification. Therefore with the aim of finding alternative natural absorber that can safely be used in cosmetic, we have screened various extract for their UV absorbent effect. Thus, the cosmetic safety against human skin, antimicrobial effects and others could be improved by using the silicon.

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Fabrication and resistance heating properties of flexible SiC fiber rope as heating elements (유연한 탄화규소 섬유 로프 발열체의 제조와 저항 발열 특성)

  • Joo, Young Jun;Cho, Kwang Youn
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.6
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    • pp.258-263
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    • 2020
  • Silicon carbide (SiC) fibers mainly fabricated from polycarbosilane, a ceramic precursor, are applied as reinforcing materials for ceramic matrix composites (CMCs) because of their high temperature oxidation resistance, tensile strength, and light weight. In this study, continuous SiC fibers used to fabricate rope-type flexible heating elements capable of generating high-temperature heat (> 650℃). For high-efficiency heating elements, the resistance of SiC fiber rope was measured by 2-point probe method according to the cross-sectional area and length. In addition, the fabrication conditions of rope-type SiC fiber heating elements were optimized by controlling the oxygen impurities and the size of crystal grains present in the amorphous SiC fiber. As a result, the SiC fiber heating element having a resistance range of about 100~200 Ω exhibited an excellent power consumption efficiency of 1.5 times compared to that of the carbon fiber heating element.

Thermal and Rheological Characterizations of Polycarbosilane Precursor by Solvent Treatment (폴리카보실란 전구체의 용매 처리에 따른 열적 및 유변학적 특성 분석)

  • Song, Yeeun;Joo, Young Jun;Shin, Dong Geun;Cho, Kwang Youn;Lee, Doojin
    • Composites Research
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    • v.35 no.1
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    • pp.23-30
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    • 2022
  • Polycarbosilane(PCS) is an important precursor for melt-spinning the silicon carbide(SiC) fibers and manufacturing ceramics. The PCS is a metal-organic polymer precursor capable of producing continuous SiC fibers having excellent performance such as high-temperature resistance and oxidation resistance. The SiC fibers are manufactured through melt-spinning, stabilization, and heat treatment processes using the PCS manufactured by synthesis, purification, and control of the molecular structure. In this paper, we analyzed the effect of purification of unreacted substances and low molecular weight through solvent treatment of PCS and the effect of heat treatment at various temperatures change the polymerization and network rearrangement of PCS. Especially, we investigated the complex viscosity and structural arrangement of PCS precursors according to solvent treatment and heat treatment through the rheological properties.

Hydrogen Response Characteristics of Tantalum Oxide Layer Formed by Rapid Thermal Oxidation at High Temperatures (고온에서 급속열산화법으로 형성된 탄탈륨산화막의 수소응답특성)

  • Seong-Jeen Kim
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.19-24
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    • 2023
  • Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

Studies on Nutrio-physiology of Low Productive Rice Plants (수도저위생산력(水稻低位生産力)의 원인구명(原因究明)에 관(關)한 영양생리적연구(營養生理的硏究))

  • Park, Jun-Kyu
    • Applied Biological Chemistry
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    • v.17 no.1
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    • pp.1-30
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    • 1974
  • Present study was undertaken to elucidate the relationship between uptake of nutrients and photosynthetic activities, and the translocation of several mineral nutrients in rice plants which were grown under different cultural conditions, utilizing radioactive tracer technique. Particular emphasis was placed on the analysis of patterns of nutrient uptake, the relationship between nutritional conditions and yield components. For this, rice plants grown on either low or high yielding fields at different growth stage were subjected to this study. The results are summarized as follows; 1. Varietal difference was observed in the uptake of potassium and phosphorus. Kusabue and Jinheung had good capacity but Paldal had rather poor capacity for the uptake of the both nutrients. 2. For rice plants, a high positive correlation was found between the oxidation of alpha plaus-naphthylamine by root and uptake of phosphorus. 3. Carbon assimilation rate repended on rice varieties. It was high in Noindo, Gutaenajuok #3 Suweon #82 and Jinheung but low in Taegujo, Kwanok, Yugu #132 etc. 4. Heavy application of nitrogen increased carbon assimilation in rice plants but this also depressed translocation of certain carbohydrates to ears. 5. Carbon assimilation wan greatly hampered in rice plants deficient in magnesium, phosphorus or potassium. 6. Total dry matter after ear formation stage, was much higher in rice plants grown in high yielding fields than those grown in low yielding fields. 7. Leaf area index(LAI) reached maximum at heading stage and decreased thereafter in high yielding fields. But in low yielding fields, it reached maximum before heading and sharply decreased thereafter due to early senescence of lower leaves. 8. In general, light transmission ratio (LTR) of leaves was higher in the early growth stage and lower in later stages. Higher ratio of LTR to leaf area index, was found in the rice grown in high yielding fields than those in low yielding fields. 9. Net photosynthetic activity decreased with the increase in leaf area index but was higher in high yielding fields than in low yielding fields. 10. After the ear formation stage, nitrogen, potassium and silicon as weil as $K_2O/N$ in straw were higher in high yielding fields than those in low yielding fields. 11. Nitrogen, phosphorus, potassium and magnesium taken up by rice plants in low yielding fields before heading stage were readily translocated to ears than those in high yielding fields. This suggests greater redistribution of nutrients in straw occurs due to lower uptake, in later growth stages, by rice plants grown in low yielding fields and hence results in early senescence due to nutrient deprivation. 12. In the high yielding fields nitrogen uptake by rice was slow but continuous throughout the life of the plants resulting in a large uptake even after heading. But, in low yielding fields the uptake was fast before heading and slow after heading. 13. A high positive correlation was found between the contents of nitrogen and potassium in the straw at heading stage and grain yield. Positive correlation was also found to hold between the contents of potassium, silicon, $K_2O/N$, $SiO_2/N$ in the straw at harvesting stage, and grain yield. 14. Carbon assimilation was greately hampered in rice plants deficient in magensium, phosphorus or potassium. 15. Uptake of nitrogen, phosphorus, potassium, silicon and manganese by rice was considerably higher in high yielding fields and reached maximum at ear formation stage. 16. In rice, a high positive correlation was discovered between total uptake of nitrogen, phosphorus, potassium, calcium, magnesium, silicon, manganese at harvesting stage and grain yield. 17. In rice, a high positive correlation was found between the total uptake of nitrogen, phosphorus, potassium, calcium, magnesium, silicon at harvesting stage, and number of spikelets per $3.3\;m^2$. In addition, a correlation was found between the total uptake of nitrogen and potassium and number of panicles per hill.

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Characteristics and Fabrication of Thermal Oxidized-SnO2 (SnO2 열산화감지막의 제작 및 특성)

  • Kang, Bong-Hwi;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.342-349
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    • 2002
  • New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

Electrochemical Characteristics of Zn and Si Ion-doped HA Films on Ti-6Al-4V by PEO Treatment

  • Lim, Sang-Gyu;Hwang, In-Jo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.199-199
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    • 2016
  • Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

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Microstructure Evolution and Properties of Silicides Prepared by dc-sputtering (스퍼터링으로 제조된 니켈실리사이드의 미세구조 및 물성 연구)

  • An, Yeong-Suk;Song, O-Seong;Lee, Jin-U
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.601-606
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    • 2000
  • Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.

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Schottky Contact Application을 위한 Yb Germanides 형성 및 특성에 관한 연구

  • Na, Se-Gwon;Gang, Jun-Gu;Choe, Ju-Yun;Lee, Seok-Hui;Kim, Hyeong-Seop;Lee, Hu-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.399-399
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    • 2013
  • Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

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