• Journal of Korea Foundry Society
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• v.14 no.1
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• pp.28-34
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• 1994

Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of $0.2{\sim}1.0mm/min$ by using split type, reusable graphite molds which were coated with $Si_3N_4$ powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.162-165
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• 1991

Oxygen behaviors in CZ-silicon wafer, grown by the Lucky Advanced Materials Inc. that is a pioneer of silicon material industries in Korea, were investigated to simulate effects on the device performance of oxygen, neglecting the effect of other impurity content, defects and thermal history. Silicon wafers were annealed through simulated 16K SRAM thermal cycle. As initial oxygen concentration increased up to 16.7ppma the amount of oxygen precipitation increased up to 10.6ppma and the bulk microdefect density increased up to $10.3{\times}10^3/mm^2$, but the depth of the denuded zone decreased to $5.0{\mu}m$

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1249-1256
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• 1998

${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

• Journal of Preventive Medicine and Public Health
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• v.32 no.2
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• pp.200-205
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• 1999

Objectives: This study was carried out to investigate the aluminum concentrations in blood, urine and drinking water, the factors which affect the concentrations and the role of silicon in patients who were taking antacid containing aluminum. Methods: We selected 122 peptic ulcer patients as cases and 144 healthy examinees as controls. Blood, urine, and drinking water were collected from the each study subject and we measured aluminum concentrations as well as silicon concentrations in the specimens. The factors including silicon affect on the aluminum concentrations were also analyzed, Results: 1. The mean duration of antacid administration was 12 months, and the mean daily and total amount of aluminum administration were 0.9 g and 304 g per each patient, respectively. 2. The blood and urine aluminum concentrations were significantly higher in the case. 3. The blood silicon concentration was significantly lower in the control group, and the urine silicon concentration was significantly higher in the case. 4. Urine aluminum concentration was significantly correlated with blood aluminum concentration (r=0.18), and urine silicon concentration was correlated with blood aluminum (r=0.19) and urine aluminum concentrations (r=0.13). 5. The longer the duration of antacid administration and the larger the total and daily amount of aluminum in the antacid were, the higher urine aluminum and silicon concentrations were, but not to a statistically significant degree. Conclusions: Blood and urine aluminum concentrations were higher in the ulcer patients. The authors suggest that follow-up studies of the patients who administered antacid with high aluminum content for long duration should be done.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1203-1207
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• 2018

In this study, silica nanowires were formed using silicon oxide films with different oxygen contents, and their microstructure and physical properties were compared with those of silica nanowires formed using Si wafers. The silicon oxide films were fabricated by using a plasma-enhanced chemical vapor deposition method. Silica nanowires were formed by thermally annealing silicon oxide films coated with nickel films as a catalyst. In the case of silicon oxide films having an oxygen content of approximately 50 at.% or less, the formation mechanism, microstructure, and physical properties of the nanowires were not substantially different from those of the silicon wafer. In particular, the uniformity of the thickness showed better behavior in the silicon oxide films. These results imply that silicon oxide films can be used as an alternative for fabricating high-quality silica nanowires at low cost.

• Journal of Microbiology and Biotechnology
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• v.30 no.1
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• pp.118-126
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• 2020

Silicon and phosphorus are elements that are beneficial for plant growth. Despite the abundant availability of silicate and phosphate in the Earth's crust, crop nutritional requirements for silicon and phosphorus are normally met through the application of fertilizer. However, fertilizers are one of the major causes of heavy metal pollution. In our study, we aimed to assess silicate and phosphate solubilization by the bacteria Enterobacter ludwigii GAK2, in the presence and absence of phosphate [Ca₃(PO₄)₂] or silicate (Mg₂O₈Si₃), to counteract cadmium stress in rice (Oryza sativa L). Our results showed that the GAK2-treated rice plants, grown in soil amended with phosphate [Ca₃(PO₄)₂] or silicate (Mg₂O₈Si₃), had significantly reduced cadmium content, and enhanced plant growth promoting characteristics including fresh shoot and root weight, plant height, and chlorophyll content. These plants showed significant downregulation of the cadmium transporter gene, OsHMA2, and upregulation of the silicon carrier gene, OsLsi1. Moreover, jasmonic acid levels were significantly reduced in the GAK2-inoculated plants, and this was further supported by the downregulation of the jasmonic acid related gene, OsJAZ1. These results indicate that Enterobacter ludwigii GAK2 can be used as a silicon and phosphorus bio-fertilizer, which solubilizes insoluble silicate and phosphate, and mitigates heavy metal toxicity in crops.

• Journal of The Korean Society of Grassland and Forage Science
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• v.41 no.3
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• pp.162-167
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• 2021

Aluminum (Al) stress in acidic pH is known to decrease the growth and productivity of alfalfa. However, not much is known about how the application of silicon (Si) affects the Al stress response in alfalfa. This study was conducted to evaluate the effect of exogenous application of Si on the growth of alfalfa seedlings exposed to Al stress in pots. Alfalfa seedlings grown in pots for 2 weeks were treated either Al stress (pH 4.0, 0.2 mM Al) or Al stress + Si (1 mM) for 5 days, lengths and biomass of shoot and root, and chlorophyll and carotenoid contents in leaf tissues were analyzed respectively. Al stress treatment inhibited shoot and root growth, and decreased fresh and dry weights, and chlorophyll content in leaves, but increased carotenoid content. In contrast, when alfalfa seedlings treated with Al stress combined with Si, delayed growth caused by Al stress of shoot and root of alfalfa seedlings was restored, dry weight was increased and chlorophyll content of leaf tissue was increased, but carotenoid content was decreased. These results suggest that Si has a function of alleviating Al toxicity in alfalfa, of which it exhibits a mitigating effect by a function that overlaps with some of the intracellular functions of carotenoids.