• 한국주조공학회지
• /
• 제3권4호
• /
• pp.256-261
• /
• 1983

In this study, the variations of tensile strength and yield strength of Al-20% Si alloy were studied. Copper, magnesium and nickel as alloying elements added from 1% to 3% respectively. The temperature range was from room temperature to $350^{\circ}C$. The refinement of primary silicon crystal was treated with phosphorous addition. The results obtained are as follows: 1. Tensile strnegth and yield strength showed more increased strength in refining treated alloy than that of in nonrefining alloy at elevated temperature. 2. Tensile strength and yield strength were increased with the contents of copper. Tensile strength showed the maximum at $150^{\circ}C$, but yield strength was decreased with increasing temperature. 3. The effect of magnesium addition on tensile strength and yield strength showed the maximum at 1% addition and $150^{\circ}C$. 4. Tensile strength and yield strength showed a slight increase with the content changes of nickel and they were decreased with increasing temperature.

• 대한전자공학회논문지
• /
• 제27권9호
• /
• pp.1402-1408
• /
• 1990

We studied the electrical, optical and structural properties of microcrystalline silicon thin films prepared by a new chemical vapour deposition technique, called filament assisted(FA)-CVD. The microcrystalline silicon is sucessfully deposited when the hydrogen dilution ratio exceeds 30. The Raman peak at 520 cm-1 and the X-ray diffraction peak at 27.7\ulcorner0.2\ulcornerbecome sharper with increasing hydrogen dilution ratio. We obtain high quality microcrystalline Si by FA-CVD with optical gap of \ulcorner2.2eV and hydrogen content of \ulcorner3 at %.

• 태양에너지
• /
• 제8권1호
• /
• pp.68-73
• /
• 1988

In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.

• 한국표면공학회지
• /
• 제31권2호
• /
• pp.101-108
• /
• 1998

The effect of oxidation-reduction heating conditions on coating adherence of hot-dip galvanized steel containing silicon has beeninvestigated. The presence of a stbke sillicon oxide formed on the steel surface has been shown to be very detrimenal to proper wetting by liquid zinc. When the steel has more than the critical sillicon content neeled to from a stable external oxide, the use of oxidation-reduction method has been found successful in obtaining a good quality, coated product with excellence adhreence. This can be explained by the formation of an iron oxide. The iron oxrtion of the scale is reduced, leaving the stable oxides dispersed in a fresh metallic iron surface layer. This reduced iron surface is easily wetted by the liquid zinc and excellent adherence is obtained.

• 한국세라믹학회지
• /
• 제31권4호
• /
• pp.399-406
• /
• 1994

The SiC/MoSi2 composite material was prepared by infiltration with the mixture of metal Si and MoSi2 into the preform of $\alpha$-SiC and graphite under the vacuum atmosphere of 10-1 torr. The mechanical properties, phases and microstructural characteristics have been investigated by employing an universal testing machine, scanning electron microscope and X-ray diffractometer. With the increase of MoSi2/Si mixing content, the quantity of the residual silicon phase was decreased and the hardness and fracture toughness of composite materials were increased. Also, as the infiltration temperature increased, a lot of fine-grained $\beta$-SiC phases, which were produced from the reaction of graphite and liquid silicon melt, were transformed to $\alpha$-SiC phases.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.513-516
• /
• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• 한국주조공학회지
• /
• 제20권1호
• /
• pp.3-12
• /
• 2000

The lead content of drinking water has been restricted to less than 15 ppb by Environmental Protection Agency (EPA) in USA. This has led to extensive research and development work at the Materials Technology Laboratory (MTL) of CANMET, a Canadian Government research laboratory, on the development of low-lead and lead-free copper alloys for plumbing applications. Attentionhas also been focused on the environmentally friendly and energy efficient permanent mold casting process to minimize the disposal of foundry sand contaminated by lead due to the use of leaded alloys in the non-ferrous foundries. A new series of alloys called SeBiLOY contaning Bi and Se been introduced to replace lead in the leaded alloys. This paper addresses some important casting characteristics such as fluidity, hot tear resistance, mechanical properties and microstructure of lead-free alloys such as SeBiLOY III and low-lead alloys such as silicon brass, silicon bronze and yellow brass in gravity permanent mold casting.

• 한국진공학회지
• /
• 제4권S2호
• /
• pp.69-74
• /
• 1995

The effects of TCA incorporation during annealing process on the SIMOX quality is studied. Silicon wafers are implanted with heavy dose of oxygen ions, and are annealed at $1300^{\circ}C$ for 4 hours. The annealing process is splitted into three conditions due to some differences of low temperature preliminary annealing step which are without pre-annealing step. The specimens are analyzed by several methods, such as AES, XTEM, and TRXFA. TCA incorporation during pre-annealing step is effective in dislocation density reduction and heavy metal content reduction.

• 한국표면공학회지
• /
• 제22권3호
• /
• pp.109-117
• /
• 1989

The effect of heft treatment on the characteristic properties of insulation layer is studied for two kinds of non-oriented silicon steels, which were insulation-coates with various kinds of inorganic and inorganic-organic complex coating solutions. In addition, how the carbon contained in the insulation layer would affect the carbon content and the magnetic properties of the steel substrates is examined. Lower temperature heat treftment ($480^{\circ}C$ for 0.5hr) is found to render morw favorable surface qualities, wheras higher temperature heat treatment ($790^{\circ}C$ for 2hr) better core loss due to grin growt occurred during the heat treatment. Decarburization of the steel substrate is also found unaffectrd by the presence of carbon in the insulation layer.

• Bulletin of the Korean Chemical Society
• /
• 제12권6호
• /
• pp.705-708
• /
• 1991

Novel polysilamethylenosilanes (PSMS) were prepared by Wurtz type co-condensation of various mixtures of 2,4,4,6-tetrachloro-2,6-dimethyl-2,4,6-trisilahept ane (TSH) and dimethyldichlorosilane (D). When TSH was incorporated more than 25 mole%, PSMS polymers were soluble in common organic solvents probably due to the polycarbosilane linkage brought from TSH. The molecular weights of the polymer were measured by gel permeation chromatography and showed higher molecular weight with high TSH content. The thermal gravimetric residues increased as TSH contents increased. These properties suggested that PSMS polymers could be useful as ceramic precursors for silicon carbide.