• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.343-343
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• 2010

In this paper, Schottky barrier thin-film-transistors (SB-TFTs) with platinum silicide at source/drain region based on glass substrate were fabricated. Poly-silicon on glass substrates was crystallized by excimer laser annealing (ELA) method. The formation of pt-silicide at source/drain region is the most important process for SB-TFTs fabrication. We study the optimal condition of Pt-silicidation on glass substrate. Also, we propose this device as promising structure in the future.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.241-244
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• 2002

The dependence of NiSi properties such as sheet resistance and cross-sectional profile on the dopants was characterized. There was little difference of sheet resistance between various dopants such as As, p, BF2 and B just after R'n formation of NiSi. However, the NiSi properties showed strong dependence on the dopants when thermal treatment was applied after RTf formation. BFa .implanted silicon was the best stable property while As implanted one was the worst. The main reason of the excellence property of BF2 sample is believed to be the retardation of Ni diffusion by the F. Therefore, retardation of Ni diffusion is very desirable fur high performance NiSi technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.149.1-149.1
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• 2013

Noble metal silicides are widely used in silicon based microelectronic and optoelectronic devices. Among them, as compared to other silicides, structural and electronic properties of platinum silicide (PtSi) are found to be less sensitive to change in its dimensions. PtSi is known to overcome the junction spiking problems of Al-Si contacts. Present study is regarding the spatial evolution of platinum silicide in Pt/SiOx/Si. Scanning photoelectron emission microscopy (SPEM) was used for this purpose. SPEM images were obtained for pristine samples and after an annealing at $500^{\circ}C$ for 1 hr. Core-level spectra were recorded at different points in SPEM images contrasted by the intensity of Pt 4f7/2. Both Pt 4f and Si 2p spectra reveal the formation of PtSi after annealing. However, in contrast to earlier reports, PtSi formation is found to be non-uniform confirmed by the SPEM images and from the core level spectra taken at different intensity points.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.198-201
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• 2002

In this paper, the dependence of Ni-silicide properties such as sheet resistance and cross-sectional profile on the dopants have been characterized. There was little dependence of sheet resistance on the used dopants such as As, P, $BF_{2}$ and $B_{11}$ just after RTP (Rapid Thermal Process). However, the silicide properties showed strong dependence on the dopants when thermal treatment was applied after formation of Ni-silicide. $BF_{2}$ implanted sample shows the best stable property, while $B_{11}$ implanted one was thermally unstable. The main reason of the excellent property of $BF_{2}$ sample is believed to be the retardation of Ni diffusion by the flourine.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.912-917
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• 1998

화학적 산화막(SiOx)이 형성된 Si(100)기판 위에 Co-silicide의 형성과 계면 형상에 관한 연구를 하였다. 화학적 산화막은 과산화수소수(H2O2)의 인위적 처리에 의해 약 2nm을 형성시켰다. 그 위에 5nm 두께의 Co 박막을 전자빔 증착기에 의해 증착시킨 후 열처리하여 Co-silicide를 형성하였다. 화학적 산화막 위에서 Co-silicide 반응기구를 알아 보기 위해 $500^{\circ}C$-$900^{\circ}C$의 온도 범위에서 ex-situ와 in-situ 열처리를 하였다. 이와같이 형성된 Co-silicide 시편의 상형성, 표면 및 계면 형상, 그리고 화학적 조성을 XRD, SEM, TEM, 그리고 AES를 이용하여 분석하였다. 분석 결과 es-situ 열처리시 $700^{\circ}C$까지 CoSi2 상은 형성되지 않았고 Co의 응집화현상이 일어났다. $800^{\circ}C$ 열처리한 경우에는 CoSI2가 형성되었고 facet 현상이 크게 나타났으며 불연속적인 grain 들이 형성되었다. In-situ 열처리한 경우에는 저온에서 ($550 ^{\circ}C$)반응하여 Co-silicide가 형성되기 시작하였으며 $600^{\circ}C$부터는 facet에 의해 박막의 특성이 나빠지기 시작했다. $550^{\circ}C$에서 Co가 화학적 산화막 층을 통해 확산하여 균질한 Co-silicide를 형성하였다. 이와같이 형성된 균질한 실리사이드 층을 이용하여 다단계(55$0^{\circ}C$-$650^{\circ}C$-$800^{\circ}C$)열처리에 의해 균질한 다결정 CoSI2의 형성이 관찰되었다.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.122-126
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• 1989

A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with $TiSi_2/n^+$polyoide and $CoSi_2/n^+$polycide gate. Also, evaporated Ti,Co films on polysilicon has been annealed by RTA and furnace annealing in $N_2$ abient at temperature of $400^{\circ}C-1000^{\circ}C$. The Ti-,Co-silioide formation is characterized by 4-point probe, silicide growth rate and Its reproductivity bas been examined by SEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.134-134
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.66-67
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.49-49
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• 1993