• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제4권2호
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• pp.172-175
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• 2004

Generally, the yield rate of semiconductors is the major factor that affects directly the price of semiconductors. For a high yield rate of semiconductors, the air inside clean room is needed to be purified and high efficient filters are used for this. The filter are made of super-fine fiber and certain pinholes can be easily produced on the filter's surface by inadvertent manufacturing. As these pinholes are not easily detected with the bare sight, these pinholes exert a negative impact to filtration performance of the filter. In this research, not only the automatic test equipment for detecting pinholes is proposed, but also inverse modeling scheme based on artificial neural network is applied for tuning of its important parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• 한국광학회:학술대회논문집
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• 한국광학회 1995년도 광학 및 양자전자학 워크샵 논문집
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• pp.138-148
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• 1995

A reduced description of the dynamics of carriers in excited semiconductors is presented. Fristly, a time-convolutionless equation of motion for the reduced density operator is derved from the microscopic Liouville wquation operator method. Secondly, the quantum kinetic equations for intercting electron-hole parirs near band-edge in semiconductors under an extermal optical field are obtained from the equation of motion for the reduced density operator. The non-Markovian optical gain of a driven semiconductor is derived including the many-body effects. plasma screening and excitinic effects are taken into account using as effective Hamiltonian in the time-dependent Hartree-Fock approximation. it is shown that the line shape of optical-gain spectra gain is enhanced by the exicitonic effects caused by the attrative electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the extermal driving filed and the intermal driving Filed and the stochastic reservoir of the system.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• 산학경영연구
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• 제15권
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• pp.47-58
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• 2002

Samsung Electronics has 25 production bases, 36 marketing subsidiaries and 23 overseas offices in 46 countries around the world. Samsung Electronics global strategy involves seven main regions: North America, Europe, Southeast Asia, Central Asia, China, the CIS and Latin America. Samsung Electronics is dedicated to helping the local communities where it does business, helping to advance local economies and develop products that best suit local needs. This case attempts to introduce the localization strategies of Samsung Austin Semiconductors especially with respect to the community service programs. Samsung Austin Semiconductors develops a framework for a firm to adapt in a foreign environment creating corporate citizenship. This model surely helps the firm to adapt, survive and grow even in a hostile foreign environment.

• 한국전자파학회지:전자파기술
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• 제12권1호
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• pp.34-41
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• 2001

Semiconductors performing digital clocking are a main source of radiated emission noise. Therefore, the most secure method of reducing emission noise is to reduce emission radiated from semiconductors; an application of an absorber to the surface of semiconductors is one of these methods, too. However, in reality, it is difficult to achieve as much effect of noise reduction as expected by using only absorber. It is confirmed by experiment in this paper that a loop area within chip has no correlation with radiated emission noise and it is clarified why the existing absorber fails to achieve a satisfactory effect of emission noise reduction. Besides, a new type of chip coating absorber has been developed which can cover up to semiconductor out lead by using ferrite coating material of ferrite/epoxy acrylate substance using only permeability loss out of electromagnetic wave reduction characteristics of materials. As a result of evaluating radiated emission noise by applying this coating absorber to semiconductor device, it could be confirmed that emission noise decreased from about 3 ㏈ up to 20㏈ depending on frequency.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.784-789
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• 2011

A linear spring model, where the interactions among atoms are assumed to be isotropic and elastic, is employed for the study of non-polar optical phonon scattering in the valence band of alloy semiconductors. The force equations of n atoms are used in the spring model for the consideration of the random distribution of constituent atoms in an alloy semiconductor. When the number of atoms in a unit cell is assumed to be two based on the experimental result, the optical deformation potent is valid for compound semiconductors as well as alloy semiconductors.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2009년도 춘계학술대회 논문집 특별세미나,특별/일반세션
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• pp.249-256
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• 2009

The cooling technology of power conversion semiconductors in the propulsion system for the HEMU(High Electrical Multi Unit) are applied in water cooling method and phase change method such as the immersed type and the heat pipe type. This research designs and manufactures the water cooling system that could cool about heat load Q=2kW and performance tests to apply it by an electric power conversion semiconductors(IGBT) cooling technology. Experimental condition made change of a flow rate, an air velocity and a heat load to confirm operation characteristics of water cooling device, and when is heat load 2kW, air velocity 20 m/s, and water flow rate 7kg/s, it is about $80^{\circ}C$ to temperature of cooling plate.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.17-17
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• 2003

Semiconductors with ferromagnetism at room temperature has been actively searched for in recent years; a prospect of devices using both charge and spin continuously gives impetus to the activities. Transition metal doped oxide materials have been of particular interest. Co substituted ZnO [1] and TiO$_2$ [2] thin films, for example, were reported to show ferromagnetic properties at room temperature. However, various studies do not seem to converge on a definite picture [3,4,5]. The issue is rather fundamental: whether a system shows ferromagnetic properties at all, and in case it does, whether the system possesses a close coupling between magnetism and transport properties. In this talk, we shall assess the current status of transition metal doped oxide materials as room temperature ferromagnetic semiconductors.