• Nuclear Engineering and Technology
• /
• v.42 no.4
• /
• pp.426-433
• /
• 2010

The characteristic X-rays emitted from materials after gamma ray exposure was simulated and measured. A CdTe semiconductor detector and a $^{57}Co$ radiation source were used for energy spectroscopy. The types of materials could be identified by comparing the measured energy spectrum with the theoretical X-ray transition energy of the material. The sample composition was represented by the $K_{\alpha1}$-line (Siegbahn notations), which has the highest intensity among the characteristic X-rays of each atom. The difference between the theoretic prediction and the experimental result of K-line measurement was < 0.61% even if the characteristic X-rays from several materials were measured simultaneously. 2D images of the mixed materials were acquired with very high selectivity.

• Radiation Oncology Journal
• /
• v.16 no.2
• /
• pp.195-202
• /
• 1998

Purpose : In order to obtain basic data for treatment plan in radiosurgery, we measured small fields of 6 MV X-rays and compared the measured data with our Monte Carlo simulations for the small fields. Materials and Methods : The small fields of 1.0, 2.0 and 3.0 cm in diameter were used in this study. Percentage depth dose (PDD) and beam Profiles of those fields were measured and calculated. A small semiconductor detector, water phantoms, and a remote control system were used for the measurement Monte Carlo simulations were Performed using the EGS4 code with the input data prepared for the energy distribution of 6 MV X-rays, beam divergence, circular fields and the geometry of the water phantoms. Results : In the case of PDD values, the calculated values were lower than the measured values for all fields and depths, with the differences being 0.3 to 5.7% at the depths of 20 to 20.0 cm and 0.0 to 8.9% at the surface regions. As a result of the analysis of beam profiles for all field sizes at a depth of loom in water phantom, the measured 90% dose widths were in good agreement with the calculated values, however, the calculated Penumbra radii were 0.1 cm shorter than measured values. Conclusion : The measured PDDs and beam profiles agreement with the Monte Carlo calculations approximately. However, it is different when it comes to calculations in the area of phantom surface and penumbra because the Monte Carlo calculations were performed under the simplified geometries. Therefore, we have to study how to include the actual geometries and more precise data for the field area in Monte Carlo calculations. The Monte Carlo calculations will be used as a useful tool for the very complicated conditions in measurement and verification.

• Journal of Biomedical Engineering Research
• /
• v.28 no.6
• /
• pp.756-767
• /
• 2007

For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

• Journal of Astronomy and Space Sciences
• /
• v.29 no.4
• /
• pp.343-349
• /
• 2012

The solar proton telescope (SPT) is considered as one of the scientific instruments to be installed in instruments for the study of space storm (ISSS) which is determined for next generation small satellite-1 (NEXTSat-1). The SPT is the instrument that acquires the information on energetic particles, especially the energy and flux of proton, according to the solar activity in the space radiation environment. We performed the simulation to determine the specification of the SPT using geometry and tracking 4 (GEANT4). The simulation was performed in the range of 0.6-1,000 MeV considering that the proton, which is to be detected, corresponds to the high energy region according to the solar activity in the space radiation environment. By using aluminum as a blocking material and adjusting the energy detection range, we determined total 7 channels (0.6~5, 5~10, 10~20, 20~35, 35~52, 52~72, and >72 MeV) for the energy range of SPT. In the SPT, the proton energy was distinguished using linear energy transfer to compare with or discriminate from relativistic electron for the channels P1-P3 which are the range of less than 20 MeV, and above those channels, the energy was determined on the basis of whether silicon semiconductor detector (SSD) signal can pass or not. To determine the optimal channel, we performed the conceptual design of payload which uses the SSD. The designed SPT will improve the understanding on the capture and decline of solar energetic particles at the radiation belt by measuring the energetic proton.

• Journal of the Korean Society of Radiology
• /
• v.5 no.2
• /
• pp.97-101
• /
• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Journal of Radiation Protection and Research
• /
• v.38 no.3
• /
• pp.132-137
• /
• 2013

Cryogenic particle detectors have recently been adopted in radiation detection and measurement because of their high energy resolution. Many of these detectors have demonstrated energy resolutions better than the theoretical limit of semiconductor detectors. We report the development of alpha spectrometer using a micro-fabricated magnetic calorimeter coupled to a large-area particle absorber. A piece of gold foil of $2{\times}2{\times}0.05mm^3$ was glued to the paramagnetic temperature sensor made of sputtered Au:Er film to serve as an absorber for incident alpha particles. We performed experiments with 241Am source at cryogen free adiabatic demagnetization refrigerator (CF-ADR). A high energy resolution of 6.8 keV in FWHM was obtained for 5.5 MeV alpha particles.

• Journal of Electrical Engineering and information Science
• /
• v.3 no.2
• /
• pp.239-244
• /
• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1280-1282
• /
• 1994

The method of passivation for protecting the $Hg_{l-x}Cd_xTe$ surface is important device fabrication process, because the surface components are highly reactive leading to its chemical and electrical instability. Especially, the material of which composition is x=0.2 or 0.3, is narrow bandgap semiconductor and used as detector of infrared radiation. The device performance of narrow bandgap semiconductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{l-x}Cd_xTe$ allows rigorous control of the surface chemistry and provides an in-situ monitor of surface reaction. So electro-chemical reduction at specific potential can selectively eliminate the undesirable species on the surface and manipulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality or chemically treated $Hg_{l-x}Cd_xTe$ good surface.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.5
• /
• pp.143-151
• /
• 2016

The aim of this study is to investigate the optimal algorithm to extract medical radiation induced pixel signal from complementary metal-oxide semiconductor (CMOS) sensors of smartphones camera. The pixel intensity and pixel number of smartphone camera were measured as the X-ray dose was increased. The front camera of the smartphone camera has low noise property and excellent dose response as compared to the back camera of the smartphone. The indirect method which uses scintillation crystal in front of the smartphone camera, couldn't improve the X-ray detection efficiency as compared to the direct method which does not use any scintillator in front of the smartphone camera. When we used the algorithm which employing threshold level on the pixel intensity and pixel number, the dose linearity was more higher for the pixel intensity rather for the pixel number. The use of pixel intensity of Y color component which represents the grey scale, would be efficient in terms of the radiation detection efficiency and reducing the complexity of the image processing. We expect that the radiation dose monitoring can be managed effectively and systematically by using the proposed radiation detection algorithm, thus eventually will contribute to the public healthcare.

• Journal of the Korean Society of Radiology
• /
• v.4 no.2
• /
• pp.21-25
• /
• 2010

Recently, various semiconductor compounds as radiation detection material have been researched for a diagnostic x-ray detector application. In this paper, we have fabricated the CdS detecton sensor that has good photosensitivity and high x-ray absorption efficiency among other semiconductor compounds, and evaluated the application feasibility by investigating the detection properties about energy range of diagnostic x-ray generator. We have fabricated the line voltage selector(LCV) for a signal acquisition and quantities of CdS sensor, and designed the voltage detection circuit and rectifying circuit. Also, we have used a relative relation algorithm according to x-ray exposure condition, and fabricated the interface board with DAC controller. Performance evaluation was investigated by data processing using ANOVA program from voltage profile characteristics according to resistive change obtained by a tube voltage, tube current, and exposure time that is a exposure condition of x-ray generator. From experimental results, an error rates were reduced according to increasing of a tube voltage and tube current, and a good properties of 6%(at 90 kVp) and 0.4%(at 320 mA) ere showed. and coefficient of determination was 0.98 with relative relation of 1:1. The error rate according to x-ray exposure time showed exponential reduction because of delayed response velocity of CdS material, and the error rate has 2.3% at 320 msec. Finally, the error rate according to x-ray dose is below 10%, and a high relative relation was showed with coefficient of determination of 0.9898.