• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.59-67
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• 2006

We demonstrate bidirectional long-reach 35-channel dense wavelength division multiplexing-passive optical network(DWDM-PON) based on wavelength-locked Fabry-Perot laser diodes (F-P LDs). The mode control of F-P LD enhances output power at decreased the required injection power. We show packet-loss-free transmission in all 70 channels at 125 Mb/s per channel line rate through 70 km of single mode fiber without optical amplifier The DWDM-PON can consolidate a metro network into an access network by bypassing the central offices within its reach. The proposed DWDM-PON can accommodate about 80 subscribers with an EDFA-based broadband light source. Further expansion up to 100 subscribers is possible with a semiconductor-based BLS.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.8 no.1
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• pp.1-11
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• 2013

The femto fusion technology refers to not only the technology for femtosecond($10^{-15}$ second) laser and but also the fusion technology of its application. This technology is comparable to the nano technology, the extreme technology on the space, and is of extreme time-domain technology. Now, we need to develop the hyperfine and high-precision femto fusion process technology which allows to miniaturize and highly integrate the products of mobile, semiconductor and display industries, the national main focusing growth industries. However, The femtosecond laser fabrication technology is essential in the development of fusion technology, but only a few of domestic researchers can handle the former. Under this condition, our government plans to develop the "femto fusion technology infrastructure project" as one of the ICT research infrastructure. So the purpose of this study is to analyze the feasibility of this project. We applied AHP(analytic hierarchy process) for this study. The final result shows that all the repondent's score is over 0.55 and the aggregated score is 0.846. And as a consequence, we can conclude that to do this project is feasible.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.339-344
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• 2011

The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.32-36
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• 2008

In this study, $In_2O_3-ZnO$ thin films are prepared on quartz substrates by the pulsed laser deposition and their optical and electrical properties are investigated as the function of substrate temperatures ($200{\sim}600^{\circ}C$) at the fixed oxygen pressure of 200 mTorr. The XRD measurement shows that polycrystalline $In_2O_3-ZnO$ thin films are formed. In the XRD measurement, the intensity of the (400) $In_2O_3$ peak at $35.5^{\circ}$ decreases and that of the (222) $In_2O_3$ peak at $30.6^{\circ}$ increases with the increase substrate temperature up to $500^{\circ}C$. From the result of AFM measurement, the morphology of $In_2O_3-ZnO$ thin films are observed as round-type grains. The lowest surface roughness (6.15 nm) is obtained for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$. The optical transmittance of $In_2O_3-ZnO$ thin films are higher than 82% in the visible region. The maximum carrier concentration of $2.46{\times}10^{20}cm^{-3}$ and the minimum resistivity of $1.36{\times}10^{-3}{\Omega}cm$ are obtained also for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$.

• 한국가시화정보학회:학술대회논문집
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• 2002.11a
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• pp.1-6
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• 2002

How is the flow in a rotating impeller. About 35 years have passed since one experimentalist rotating with the impeller. of a huge centrifugal blower made the flow measurements using a hot-wire anemometer (Fowler 1968). Optical measurement methods have great advantages over the intrusive methods especially for the flow measurement in a rotating impeller. One is the optical flow visualization (FV) technique (Senoo, et al., 1968) and the other is the application of laser velocimetry (LV) (Hah and Krain, 1990). Particle image velocimetries (PIVs) combine major features of both FV and LV, and are very attractive due to the feasibility of simultaneous and multi-points measurements (Hayami and Aramaki, 1999). A high-pressure-ratio transonic centrifugal compressor with a low-solidity cascade diffuser was tested in a closed loop with HFC134a gas at 18,000rpm (Hayami, 2000). Two kinds of measurement techniques by image processing were applied to visualize a flow in the compressor. One is a velocity field measurement at the inducer of the impeller using a PIV and the other is a pressure field measurement on the side wall of the cascade diffuser using a pressure sensitive paint (PSP) measurement technique. The PIV was successfully applied for visualization of an unsteady behavior of a shock wave based on the instantaneous velocity field measurement (Hayami, et al., 2002b) as well as a phase-averaged velocity vector field with a shock wave over one blade pitch (Hayami, et al., 2002a. b). A violent change in pressure was successfully visualized using a PSP measurement during a surge condition even though there are still some problems to be overcome (Hayami, et al., 2002c). Both PIV and PSP results are discussed in comparison with those of laser-2-focus (L2F) velocimetry and those of semiconductor pressure sensors. Experimental fluid dynamics (EFDs) are still growing up more and more both in hardware and in software. On the other hand, computational fluid dynamics (CFDs) are very attractive to understand the details of flow. A secondary flow on the side wall of the cascade diffuser was visualized based either steady or unsteady CFD calculations (Bonaiuti, et al.,2002). EFD and CFD methods will be combined to a hybrid method being complementary to each other. Measurement techniques by image processing as well as CFD calculations give a huge amount of data. Then, data mining technique will become more important to understand the flow mechanism both for EFD and CFD.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Korean Journal of Optics and Photonics
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• v.28 no.5
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• pp.213-220
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• 2017

This paper proposes how to fabricate an educational Mach-Zehnder interferometer that is easy to align and inexpensive, using 3D printers and semiconductor lasers. The interferometer consists of a body $165mm{\times}120mm{\times}57mm$ in size, mirror mounts, a laser holder, beam splitters, and so on. The laser path is adjusted by 4 mirror mounts, each comprised of rubber bands, small metal wires, and a screw. The interference fringe is enlarged by the lens at the final stage. The refractive index of a slide glass was measured by counting the number of moving interference fringes while the slide glass, inserted into one of the two interferometer arms, is rotating. The formula for the refractive index as a function of the optical-path difference and rotation angle was obtained, and used to calculate the refractive index of glass from the interferometer experiment. The use of a rotating glass in one arm of the interferometer nullifies the need for a precision stage, which despite its high cost is often required to observe the moving interference fringe in the classroom. Therefore, the 3D-printed Mach-Zehnder interferometer proposed in this paper can be very useful for education, because of its affordability and performance. It enables students to perform both qualitative and quantitative studies using a 3D-printed interferometer, such as measuring the refractive index of a glass sample, and the wavelength of light.

• Journal of the Institute of Convergence Signal Processing
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• v.2 no.3
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• pp.86-92
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• 2001

Position controls are very important in semiconductor manufacturing devices, machine tools, precision measuring instruments, etc. to measure the distance of movement of moving objects in minute units and the accuracy of measurement for the moving distance in these devices affect the performance of the whole devices. Therefore, in those precision instruments, a sensing device that can measure the distance of movement with high-precision resolution is required. Thus an optical encoder that has such advantages as easy digital interface, economical price, and a resolution similar to that of laser interferometers can be used. In this paper, a interferometer-type linear scale with easy digital interface and high-resolution has been set up and measured the distance of movement based on the diffraction principle. Interference signals produced in this optical setup of the linear scale have beers digitalized through fabricated photodetectors and designed signal processing circuits. A resolution of 0.5${\mu}{\textrm}{m}$ is acquired from the experimental interferometer-type linear scale without for the movement of scales any additional dividing circuits. It is shown that from this experiment a high-resolution distance measurement device can be designed by a simple optical setup.