• 전자공학회논문지A
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• 제32A권3호
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• pp.1-9
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• 1995

In the B-ISDN using satellite between geo-satellites and earth stations, the laser having high security and broad band width has to be used as a carrier for transmitting massive information of visual, vocal, and high rate data. In this paper, by computer simulation we analyzed the number of optical detector array of optical satellite communication downlink in case of using channel coding and no channel coding for BISDN between geo-satelites and earth stations under clear weather condition. It was supposed that 1 watt semiconductor laser was used and as modulation method, the binary FSK was used. The data rate of 10Gbps was used for B-ISDN. Also, hardly affected by atmospheric absorption 1.55$\mu$m wave-length was used to reduce influence of dispersion and chirp generated at a high speed transmission. We analyzed the received power, SNR and BER. The number of optical detector array was determined to satisfy for the BER less than 10$^{-7}$. Also, we ananlyzed the possibility of reducting the number of optical detector array in case of using channel coding. the number of optical detector array is one in the region where the elevation nangle is between 38$^{\circ}$ and 90$^{\circ}$ and two where the elevation angle is between 33$^{\circ}$ and 37$^{\circ}$ and three where the elevation angle is between 30$^{\circ}$ and 32$^{\circ}$ and increases per one as the elevation angle decreases per 1.deg.. So in the region where the elevation angle is 25$^{\circ}$, the number of optical detector arrays is eight. In case of using channel coding, the number of optical detector arrays decreases to five in the region where the elevation angle is 25$^{\circ}$. Therefore, we remaark the advantage of the channelcoding to decrease the size of received antenna and the number ob optical detector arrays.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.288.1-288.1
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• 2014

We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

• 대한의용생체공학회:의공학회지
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• 제16권4호
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• pp.555-561
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• 1995

본 논문에서는 객관적이고 신뢰성있는 체질 식별을 위한 수단으로 기존의 O-링 테스트법의 단점을 보완한 O-링 경근력 계측시스템을 설계하여 임상에 적용하였다. 의사나 체질 식별 시술자의 손으로 행하던 O-Ring 측정을 공압 펌프와 액츄에이터를 이용하여 마이크로 컴퓨터로 제어함으로써 압력을 받은 실린더와 피스톤을 확장하게하여 고리모양으로 만든 피측정자의 손가락을 확장시키도록 설계하였다. 기존의 재래식 측정법이 단순히 측정자가 느끼는 주관적인 감각과 경험으로 피측정자의 경근력을 판단하므로 객관성이 결여되고 미세한 경근력의 변화는 판정이 불가능하였으나 O-링 경근력 계측시스템을 사용한 측정법은 미세한 경근력의 변화를 측정함은 물론 손가락의 확장거리 및 측정 시간까지 계측함으로써 경근력 변화를 판단하는 파라메터가 다양하고 신뢰성을 유지하게 하였다. 임상 실험 결과 O-링 경근력 계측시스템이 기존의 체질 진단법의 단점을 보완하고 보다 객관성있는 체질 진단의 가능성을 증가시키는 것으로 확인되었다. 차후 O-링 경근력 계측 시스템을 PC와 인터페이스시켜 측정된 임상 자료를 데이타베이스화 함으로써 많은 임상 자료를 기반으로 컴퓨터에서 전문가 시스템을 구축하여 체질 진단에 대한 보다 객관적이고 신뢰성이 높은 자동 진단 시스템으로 발전시키면 한의학적인 질변진단 분야에 기여할 수 있을것이다.

• 소성∙가공
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• 제28권1호
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.41-41
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• 2007

For use in spintronic materials, dilute magnetic semiconductors (DMS) are under consideration as spin injectors for spintronic devices[l]. $TiO_2$-based DMS doped by a cobalt, iron, and manganese et al. was recently reported to show ferromagnetic properties, even at temperatures above 300K and the magnetic ordering was explained in terms of carrier-induced ferromagnetism, as observed for a III-V based DMS. An anomalous Hall effect (AHE) and co-occurance of superparamagnetism in reduced Co-doped rutile $TiO_{2-\delta}$ films have also been reported[2]. Metal segregation in the reduced metal-doped rutile $TiO_2-\delta$ films still remains as problems to solve the intrinsic DMS properties. Superlattice films have been proposed to get dilute magnetic semiconductor (DMS) with intrinsicroom-temperature ferromagnetism. For a $TiO_2$-based DMS superlattice structure, each layer was alternately doped by two different transition metals (Fe and Mn) and deposited to a thickness of approximately $2.7\;{\AA}$ on r-$Al_2O_3$(1102) substrates by pulsed laser deposition. The r-$Al_2O_3$(1102) substrates with atomic steps and terrace surface were obtained by thermal annealing. Samples of $Ti_{0.94}Fe_{0.06}O_2$(TiFeO), $Ti_{0.94}Mn_{0.06}O_2$(TiMnO), and $Ti_{0.94}(Fe_{0.03}Mn_{0.03})O_2$ show a low remanent magnetization and coercive field, as well as superparamagnetic features at room temperature. On the other hand, superlattice films (TiFeO/TiMnO) show a high remanent magnetization and coercive field. An anomalous Hall effect in superlattice films exhibits hysisteresis loops with coercivities corresponding to those in the ferromagnetic Hysteresis loops. The superlattice films composed of alternating layers of $Ti_{0.94}Fe_{0.06}O_2$ and $Ti_{0.94}Mn_{0.06}O_2$ exhibit intrinsic ferromagnetic properties for dilute magnetic semiconductor applications.

• 대한전자공학회논문지SD
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• 제41권1호
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• pp.35-46
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• 2004

Vertical-Cavity Surface-Emitting Laser(VCSEL)는 짧은 공진기(cavity)와 여러 층의 distributed Bragg reflector(DBR)층을 거울로 사용하기 때문에, edge-emitting lasers(EELs)와는 달리, 광출력 및 변환효율 등의 예측이 쉽지 않다. 그 주된 원인은 VCSEL에서는 Fabry-Perot 레이저와는 달리, 각각의 DBR 거울 층들이 손실을 가지고 있기 때문으로 이에 따라 상/하향광출력 비나 변환효율을 계산해 내는 데에 어려움이 있다. 그러나 전달 행렬 방법(transfer matrix method, TMM)을 이용하면, VCSEL과 같은 여러 층을 갖는 구조에서의 성능 지수를 정확히 계산할 수 있다. 이 논문에서는 전달 행렬 방법을 이용하여 VCSEL의 구조 변화에 따른 문턱이득, 문턱전류 밀도 및 변환효율을 구하였으며 문턱전류 및 변환효율 모두를 고려한 VCSEL의 최적 구조 설계 기법을 제시하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.493-496
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• 2004

Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.

• 한국광학회지
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• 제14권4호
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• pp.454-459
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• 2003

단일 모드 광원이 집적된 Mach-Zehnder간섭계형 파장 변환기를 제작하여 세계 최초로 10 Gb/s에서 파장 변환 특성을 확인하였다. 제작된 파장 변환기는 수동 도파로 영역에서의 전파 손실을 줄이기 위해 undoped InP층이 수동 도파로 위에 형성된 새로운 BRS 구조를 사용하였다. 단일 모드 광원으로 손실 결합형 분포 궤환형 반도체 레이저(loss-coupled distributed feedback laser; LC-DFB LD)를 사용하여, 파장 변환기에 있는 반도체 광증폭기의 주입전류가 200 mA까지 측모드 억제율이 30 dB 이상의 값을 나타내었다. 제작된 LC-DFB LD 집적 파장 변환기는 10 Gb/s의 동적 파장 변환 특성 측정 결과, 7 dB 정도의 소광비를 갖는 eye 패턴을 얻을 수 있었으며, power penalty는 $10^{-9}$ bit error rate에서 2.8 dB의 값을 나타내었다.

• 한국재료학회지
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• 제5권4호
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• pp.397-404
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• 1995

반도체 세정공정에서 염기성 세정액(SCI, Standard cleaning 1, $NH_{4}$OH + $H_{2}$O_{2}$ + $H_{2}$O)은 공정상 발생되는 여러 오염물 중 파티클의 제거를 위해 널리 사용되고 있는데, SCI 조성중 $NH_{4}$OH양에 따라 세정 중 실리콘의 식각속도를 증가시킨다. 이 연구에서는 SCI 세정이 CZ(Czochralski)와 에피 실리콘 기판 표면에 미치는 영향을 단순세정과 연속적인 산화-HF 식각-SCI 세정공정을 통해 관찰되었다. CZ와 에피 기판을 8$0^{\circ}C$의 1 : 2 : 10과 1 : 1 : 5 SCI 용액에서 60분까지 단순 세정을 했을 때 laser particle scanner와 KLA사의 웨이퍼 검색장치로 측정된 결함의 수는 세정시간에 따라 변화를 보이지 않았다. 그러나 CZ와 에피 기판을 10분간 SCI 세정후 90$0^{\circ}C$에서 산화 HF식각공정을 4번까지 반복하였을 때 에피 기판 표면의 결함수는 감소하는 반면에 CZ기판에서는 직선적으로 증가하였다. 반복적인 산화-HF 식각-XCI 세정공정을 통해 생성된 CZ기판 표면의 결함은 크기가 0.7$\mu$m 이하의 pit과 같은 형상을 보여주었다. 이들 결함은 열처리 중 CZ 기판내와 표면에 산화 석출물들이 형성, 반복적인 HF 식각-SCI 세정공정을 통해 다른 부위에 비해 식각이 빨리 일어나 표면에 생성되는 것으로 여기어 진다.