• 제목/요약/키워드: self-heating

검색결과 273건 처리시간 0.026초

열적 성장된 실리콘 질화막위에 산화 탄탈륨 초박막의 형성 (Formation of ultra-thin $Ta_{2}O_{5}$ film on thermal silicon nitrides)

  • 이재성;류창명;강신원;이정희;이용현
    • 전자공학회논문지A
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    • 제32A권11호
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    • pp.35-43
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    • 1995
  • To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

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Effects of $H_2$ vs. $O_2$ Plasma Pretreatment of Gate Oxide on the Degradation Phenomenon of Low-Temperature Polysilicon Thin-Film Transistors

  • Lee, Seok-Woo;Kang, Ho-Chul;Yang, Joon-Young;Kim, Eu-Gene;Kim, Sang-Hyun;Lim, Kyoung-Moon;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1254-1257
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    • 2004
  • Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

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바나듐 산화물의 금속-절연체 전이현상 기반 센서 연구 (Metal-Insulator Transition of Vanadium Dioxide Based Sensors)

  • 백정민
    • 센서학회지
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    • 제23권5호
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    • pp.314-319
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    • 2014
  • Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

Fluorescence-Quenched Sensor for Trinitophenol in Aqueous Solution Based on Sulfur Doped Graphitic Carbon Nitride

  • Min, Kyeong Su;Manivannan, Ramalingam;Satheshkumar, Angu;Son, Young-A
    • 한국염색가공학회지
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    • 제30권2호
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    • pp.63-69
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    • 2018
  • In this study, we report on successful attempt towards the synthesis of sulfur self-doped $g-C_3N_4$ by directly heating thiourea in air. The synthesized materials were characterized using UV-vis spectral technique, FT-IR, XRD and TEM analysis. Further, the obtained material shows an excellent detection of carcinogenic TNP(Tri nitro phenol) in the presence of 10-fold excess of various other common interferences. The strong inner filter effect and molecular interactions(electrostatic, ${\pi}-{\pi}$, and hydrogen bonding interactions) between TNP and the $S-g-C_3N_4$ Nano sheets led to the fluorescence quenching of the $S-g-C_3N_4$ Nano sheets with an excellent selectivity and sensitivity towards TNP compared to that of other nitro aromatics under optimal conditions and the detection limit calculated was found to be 6.324 nM for TNP. The synthesized nanocomposite provides a promising platform for the development of sensors with improved reproducibility and stability for ultra-sensitive and selective sensing of TNP.

가스차단기의 아크현상 해석프로그램에 대한 연구 (A Study on the Program Analyzing the Arc Phenomena in Gas Circuit Breaker)

  • 최영길;최상태;이광식
    • 조명전기설비학회논문지
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    • 제25권12호
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    • pp.74-81
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    • 2011
  • A computational approach was developed to understand about the arc quenching process in a gas circuit breaker(GCB). This approach is a program to analyze the gas flow in the breaker. The arc is processed at the same time. The program was used the so-called FLIC method for gas analysis techniques. It was referenced that the arc is interpreted the 'a Simplified Enthalpy Flow Arc Model'. In order to validate about the results of the program, a Auto Puffer GCB was chosen as the test subject. Because, the breaker is the one that arc current is interrupted by using the arc heating. And also, the current interrupting capability can be obtained only owing to the positive utilization(auto puffer) of the clogging phenomenon, without other puffer actions. In this paper, it has been realized that the entire arc quenching process is computerized, which is based on the self-flow current interruption by the auto puffer action. This program, which was verified through experiments, produced good results.

단일 알루미늄 연료 입자의 점화 및 연소 모델링 (Modeling of the Ignition and Combustion of Single Aluminum Particle)

  • 양희성;임지환;김경무;이지형;윤웅섭
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2008년도 제30회 춘계학술대회논문집
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    • pp.187-192
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    • 2008
  • A simplified model for an isolated aluminum particle burning in air is presented. Burning process consists of two stages, ignition and quasi-steady combustion (QSC). In ignition stage, aluminum which is inside of oxide film melts owing to the self heating called heterogeneous surface reaction (HSR) as well as the convective and radiative heat transfer from ambient air until the particle temperature reaches melting point of oxide film. In combustion stage, gas phase reaction occurs, and quasi-steady diffusion flame is assumed. For simplicity, 1-dimesional spherical symmetric condition and flame sheet assumption are also used. Extended conserved scalar formulations and modified Shvab-Zeldovich functions are used that account for the deposition of metal oxide on the surface of the molten aluminum. Using developed model, time variation of particle temperature, masses of molten aluminum and deposited oxide are predicted. Burning rate, flame radius and temperature are also calculated, and compared with some experimental data.

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Heat-induced coarsening of layer-by-layer assembled mixed Au and Pd nanoparticles

  • Shon, Young-Seok;Shon, Dayeon Judy;Truong, Van;Gavia, Diego J.;Torrico, Raul;Abate, Yohannes
    • Advances in nano research
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    • 제2권1호
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    • pp.57-67
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    • 2014
  • This article shows the coarsening behavior of nanoparticle multilayers during heat treatments which produce larger metallic nanostructures with varying shapes and sizes on glass slides. Nanoparticle multilayer films are initially constructed via the layer-by-layer self-assembly of small and monodispersed gold and/or palladium nanoparticles with different compositions (gold only, palladium only, or both gold and palladium) and assembly orders (compounding layers of gold layers over palladium layers or vice versa). Upon heating the slides at $600^{\circ}C$, the surface nanoparticles undergo coalescence becoming larger nanostructured metallic films. UV-Vis results show a clear reliance of the layering sequence on the optical properties of these metal films, which demonstrates an importance of the outmost (top) layers in each nanoparticle multilayer films. Topographic surface features show that the heat treatments of nanoparticle multilayer films result in the nucleation of nanoparticles and the formation of metallic cluster structures. The results confirm that different composition and layering sequence of nanoparticle multilayer films clearly affect the coalescence behavior of nanoparticles during heat treatments.

SHS법에 의한 ZrC 합성 및 온도 Profile 분석 (Synthesis and Temperature Profile Analysis of ZrC by SHS Method)

  • 이형복;조건;이재원
    • 한국세라믹학회지
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    • 제32권6호
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    • pp.659-668
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    • 1995
  • Zirconium carbide was prepared from the mixture of metal zirconium and carbon powders in argon atmosphere by Self-propagating High-temperature Synthesis (SHS) in order to obtain the best carbon source and dilution contents. The most exellent result was obtained in the case that active carbon was added as a starting material, 20~30 wt% dilution content. From thermal profile analysis an apparent activation energy of 118 KJ/mol was calculated. The maximum heating rate achieved during 15 wt% ZrC reaction by product dilution method was approximately 1.54$\times$105 K/s. Coupling this value with the measured wave velocity of 1.026cm/s yielded a maximum thermal gradient fo $1.5\times$105 K/cm. Using the definition of t* and the measured wave velocity, the effective thermal diffusivity, $\alpha$, was calculated to be 0.62$\times$102 $\textrm{cm}^2$/s.

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Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET

  • Kim, Minki;Park, Youngrak;Park, Junbo;Jung, Dong Yun;Jun, Chi-Hoon;Ko, Sang Choon
    • ETRI Journal
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    • 제39권2호
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    • pp.292-299
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    • 2017
  • We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

연속파형 Nd:YAG 레이저를 이용한 SCM4강의 표면경화에 관한 연구 (A Study on the Surface Hardening of SCM4 Steel Using a Continuous Wave Nd:YAG Laser)

  • 나기대;신병헌;신호준;유영태
    • 한국공작기계학회논문집
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    • 제16권5호
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    • pp.24-32
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    • 2007
  • Laser surface hardening is beneficially used for surface treatment of structural steel. Due to very rapid heating and cooling rates, structural low-alloy steel(SCM4) can be hardened as self quenching. The aim of this research project is to improve the influence of the process laser parameters: laser power, spot size, surface roughness, and traverse speed. The laser beam is allowed to scan on the surface of the workpiece at the constant power(1095W), varying the traverse speed at 0.3m/min, 0.5m/min and 0.8m/min. The optical lens with the elliptical profile is designed to obtain a wide surface hardening area with uniform hardness. From the results of the experiment, it has been shown that the stable hardness is about 600$\sim$700Hv, when the laser power, focal position and the traverse speed are P=1095W, z=0mm and v=0.3m/min.