• 공업화학
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• 제23권3호
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• pp.289-292
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• 2012

용액공정이 가능한 저분자 유기반도체, triethylsilylethynyl anthradithiophene (TES ADT)을 기반으로 한 유기박막 트랜지스터에서 금 전극의 일함수를 제어하기 위해 표면을 자기조립 단분자막(self-assembled monolayers, SAMs)으로 개질하였다. Benzothiol (BT)과 pentafluorobenzothiol (PFBT) 자기조립 단분자막을 이용해 금 전극의 일함수를 조절하고 이를 통해 TES ADT의 HOMO 준위에 대한 정공주입장벽을 최소화 하고자 하였다. 또한, solvent annealing 후처리 공정을 통해 TES ADT 박막의 결정성을 향상시켰고, 이를 PFBT로 개질된 금 전극을 기반으로 한 유기박막 트랜지스터에 적용한 경우 $0.05\;cm^2/Vs$의 높은 전계효과 이동도와 $10^6$의 높은 점멸비를 보고하였다.

• 분석과학
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• 제8권4호
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• pp.699-705
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• 1995

Monolayers of hypericin, a photodynamic polycyclic quinoidal compound, were prepared at the air-water interface, and were transferred to metal substrates to form Langmuir-Blodgett (LB) monolayers. The structural characteristics of hypericin LB monolayers and self-assembled (SA) monolayers were investigated using surface-enhanced resonance Raman scattering (SERRS) spectroscopy. Both the spectroscopic data and the surface pressure - area (${\pi}-A$) isotherms suggest that hypericin forms ${\pi}-{\pi}$ aggregates that orient vertically to the subphase surface. Whereas the ordering and orientation of control was less effective in SA monolayers, a higher structural regularity was attained in LB systems. The effect of subphase on the structural integrity of the monolayer was also investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.402-402
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• 2012

Bundles of single-walled carbon nanotube (SWCNTs) were grown using catalytic layer supported by self-assembled monolayers (SAMs). Amine-SAMs were introduced on SiO2/Si substrate (SAMs/Si) there then iron nanoclusters solution was dropped on it through spin-coating (Fe/SAMs/Si). This catalytic template was used to grow CNTs and the synthesized carbon material was confirmed the bundles of dense SWCNTs with incorporation of ca.1% nitrogen. The SAMs has played an active role to support catalytic layer and also acted as a source of N-dope onto SWCNTs in CVD.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1044-1045
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• 2004

In this work, the characteristics of organic thin film transistors (OTFTs) with self-assembled monolayers (SAMs) on polymeric gate insulator have been investigated. The SAMs were formed using atomic layer deposition (ALD) method onto gate insulator. Upon the investigations, it was observed that SAMs modify the wettability of polymeric insulator and influence the growth of subsequent organic semiconductor, and thereby, electric conductivity and roughness of the pentacene film are improved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1887-1889
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• 2001

금속 재질의 MEMS 구조물의 모양을 폴리머에 전사하는 micromolding 과정에서 금속 구조물과 폴리머 사이를 분리 (demolding)시킬 때 금속 구조물과 폴리머 기판 사이에 분리를 방해하는 응착 (Adhesion) 문제가 발생한다. 이러한 응착 문제를 줄이고자 표면 에너지가 낮은 Self-Assembled Monolayer(SAM) coating을 금속(Ni) 표면에 시도하였다. SAM coating 막의 형성 여부와 응착력 (Adhesion force) 값을 구하기 위해 각각 XPS(X-ray photoelectron spectroscopy)와 AFM(Atomic force microscopy)을 이용하여 측정하였고 측정 결과 Ni 표면에 SAM이 형성되었음을 XPS로부터 알 수 있었고 SAM coating된 Ni 시편에서 더 낮은 응착력값을 보여 주었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1021-1024
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• 2003

In this work, we fabricated various 2D metallic and polymeric nanopatterns with the feature resolution of sub-micrometer scale by using the method of microcontact printing ($\mu$ P) based on soft lithography. Silicon masters for the micromolding were made by e-beam lithography. Composite poly(dimethylsiloxane) (PDMS) molds were composed of a thin, hard layer supported by soft PDMS layer. Finally, monodisperse metal or polymer particles could be obtained in the prepared pattern for the application of electronic devices.

• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3614-3617
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• 2011

A density functional theory method with the local basis set was employed to perform slab calculations to study thiolate-induced surface reconstruction structures of butylthiolates (ButS) with c($4{\times}2$) superlattice of the Au(111) surface. The slab calculations indicate that the most stable adsorption structure is the ButS-Au (adatom)-SBut complex form, which is in good agreement with the reported experiments and theoretical results for thiolates with shorter alkyl chains. The cis form of ButS-Au (adatom)-SBut motifs is preferred by 0.11 eV with respect to the trans form, and by 0.15 eV over the mixed cis-trans configurations due to the steric hindrance between adjacent butyl groups. It appears that the motif of Au adatom on the Au(111) surface is favored even for butylthiolate.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.31.1-31.1
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• 2010

Various ZnO nanostructures were synthesized and ZnO nanostructure-based self-assembled transistors were fabricated. Compared to spindle and flower like nanostructure, the ZnO nanorod (NR) structure showed much stronger gate controllability, and greatly enhanced device performance, demonstrating that this structural variation leads to significant differences of the nanostructure network-based device performance. Also, patterned dry transfer-printing technique that can generate monolayer-like percolating networks of ZnO NRs has been developed. The method exploits the contact area difference between NR-NR and NR-substrate, rather than elaborate tailoring of surface chemistry or energetic. The devices prepared by the transferring method exhibited on/off current ratio, and mobility of ${\sim}2.7{\times}10^4$ and ${\sim}1.03\;cm^2/V{\cdot}s$, respectively. Also, they exhibited showing lower off-current and stronger gate controllability due to defined-channel between electrodes and monolayer-like network channel configuration. With multilayer stacks of nanostructures on stamp, the monolayer-like printing can be repeated many times, possibly on large area substrate, due to self-regulating printing characteristics. The method may enable high-performance macroelectronics with materials that have high aspect ratio.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• 한국정보전자통신기술학회논문지
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• 제14권5호
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• pp.362-368
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• 2021

본 논문에서는 알킬 사슬 길이에 따른 러빙 처리된 불소화 자기 조립 단분자막(fluorinated self-assembled monolayers; FSAM)의 수직 액정 배향 상태를 보고한다. FSAM의 증착을 위해 간단한 공정인 기체-상 방법이 사용되었다. FSAM의 가시광선 영역대 광학 평균 투과율은 77.63%~78.21%로 75.89%의 투과율을 갖는 기존의 폴리이미드막보다 우수하였다. 또한 프리틸트각 측정과 편광현미경 사진을 통해 FSAM의 우수한 수직 배향 특성을 관찰하였다. 접촉각과 FSAM의 표면에너지 측정을 통해 알킬 사슬 길이에 따른 프리틸트각이 증가하는 것을 확인하였다. FSAM의 높은 광학 투과율과 균일한 수직 배향 특성은 FSAM이 액정 배향막으로서의 가능성을 보여주었다.