• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1814-1818
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• 2003

$Li^+$ and $H^+$ co-exchanged LSXs (Li-H-LSX) with various ratios of $Li^+$ and $H^+$ were prepared, and those adsorption characteristics of nitrogen and oxygen were compared with Li-Na-LSX and Li-Ca-LSX. Li-H-LSX showed higher nitrogen capacity and selectivity than that of Li-Na-LSX in the wide range of Li-exchanged ratio. The nitrogen capacity of Li-Ca-LSX was slightly higher than that of fully Li- or Ca-exchanged LSX (Li- LSX or Ca-LSX). However, Li-Ca-LSX showed low nitrogen/oxygen adsorption selectivity until the Li content reached about 80%, which was a tendency near that of Ca-LSX.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.726-729
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• 2004

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• The KIPS Transactions:PartD
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• v.11D no.4
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• pp.983-990
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• 2004

Multiple-count problem is occurred when rectangle objects span across several buckets. The CD histogram is a technique which selves this problem by keeping four sub-histograms corresponding to the four points of rectangle. Although It provides exact results with constant response time, there is still a considerable issue. Since it is based on a query window which aligns with a given grid, a number of errors nay be occurred when it is applied to real applications. In this paper, we propose selectivity estimation techniques using the generalized cumulative density histogram based on two probabilistic models : \circled1 probabilistic model which considers the query window area ratio, \circled2 probabilistic model which considers intersection area between a given grid and objects. Our method has the capability of eliminating an impact of the restriction on query window which the existing cumulative density histogram has. We experimented with real datasets to evaluate the proposed methods. Experimental results show that the proposed technique is superior to the existing selectivity estimation techniques. Furthermore, selectivity estimation technique based on probabilistic model considering the intersection area is very accurate(less than 5% errors) at 20% query window. The proposed techniques can be used to accurately quantify the selectivity of the spatial range query on rectangle objects.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.142-142
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• 2017

High Flory-Huggins interaction parameter (${\chi}$)를 가지는 polystyrene-block-dimethylsiloxane (PS-b-PDMS)는 초미세 패턴 제작과 우수한 defect density, 우수한 edge roughness 특성으로 향상된 패턴을 제공한다는 점에서 반도체 분야에서 많은 연구가 되고 있다. 하지만, PS와 PDMS 사이에 존재하는 큰 surface tension의 차이로 인해 PDMS는 PS와 air 사이에서 segregate되기 때문에 수직배향에 불리하여 high aspect ratio (HAR)을 가지는 cylinder, lamellar 패턴 제작에 있어 큰 어려움을 가진다. 본 연구에서는 이러한 문제를 해결하기 위해, PS-b-PDMS BCP 패턴과 하부 실리콘 기판 사이에 amorphous carbon layer (ACL)를 삽입하여 효과적으로 pattern transfer하는 공정을 연구하였다. 플라즈마를 이용하여 무한대에 가까운 etch selectivity를 가지는 식각 공정을 개발함으로써 낮은 aspect ratio를 가지는 PS-b-PDMS BCP 패턴의 한계점을 극복하였다. Large-x value를 가지는 BCPs를 이용하여도 매우 높은 aspect ratio를 가지면서 동시에 pattern quality를 향상시킬 수 있는 plasma process를 제시하였다.

• Applied Chemistry for Engineering
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• v.26 no.2
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• pp.234-238
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• 2015

The separation of nitrogen heterocyclic compound (NHC) contained in a model coal tar fraction was compared by the methanol and formamide extraction. The model coal tar fraction comprising four kinds of NHC (NHCs : quinoline, iso-quinoline, indole, quinaldine) and three kinds of bicyclic aromatic compound (BACs : 1-methylnaphthalene, 2-methylnaphthalene, dimethylnaphthalene), biphenyl and phenyl ether was used as a raw material. The aqueous solution of methanol and formamide were used as solvents. A batch-stirred tank was used as the raw material - a solvent contact unit of this work. Independent of the solvent used, the distribution coefficient of NHCs sharply increased by decreasing the initial volume ratio of water to the solvent and increasing the equilibrium operation temperature, whereas, the selectivity of NHCs in reference to BACs decreased. Decreasing the initial volume ratio of solvent to feed resulted in deteriorating distribution coefficients, but the selectivity of NHCs in reference to BAC was almost the constant. The distribution coefficient of NHCs by the methanol extraction was 3~5 times higher than that of NHCs by the formamide extraction, inversely, the selectivity of NHCs based on BACs by the formamide extraction was 3~7 times higher than that of NHCs by the methanol extraction. Furthermore, two different solvent extraction methods by adding the extraction processing speed to the balance between solvency and selectivity of NHCs were compared.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.398-402
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• 2012

The catalytic performance of some metal oxides in the vapor phase selective oxidation of $H_2S$ in the stream containing ammonia and water was investigated. Among the catalysts tested $Fe_2O_3/SiO_2$ was the most promising catalyst for practical application. It showed higher than 90% $H_2S$ conversion and very small amount of $SO_2$ emission over a temperature range of $240{\sim}280^{\circ}C$. The effects of reaction temperature, $O_2/H_2S$ ratio, amount of ammonia and water vapor on the catalytic activity of $Fe_2O_3/SiO_2$ were discussed to better understand the reaction mechanism. The $H_2S$ conversion showed a maximum at $260^{\circ}C$ and it decreased with increasing temperature over $280^{\circ}C$. With an increase of $O_2/H_2S$ ratio from 0.5 to 4, the conversion was slightly increased, but the selectivity to elemental sulfur was remarkably decreased. The increase of ammonia amount favored the conversion and the selectivity to elemental sulfur with a decrease in $SO_2$ production. The presence of water vapor decreased both the activity and the selectivity to sulfur, but increased the ATS selectivity.

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.223-229
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• 2006

Methanol and formaldehyde were produced directly by the partial oxidation of methane over mixed oxide catalysts. The catalysts were composed of Mo and Bi with late-transition metals, such as Mn, Fe, and Co. The reaction was carried out at $450^{\circ}C$, 50 bar in a fixed-bed differential reactor. The prepared catalysts were characterized by $O_2-TPD$ and BET apparatus. Among the catalysts used, the catalyst composed of 1:1:2.5 molar ratio of Mo:Bi:Mn showed the best methane conversion and methanol selectivity. The change in ratio of methane to oxygen affected at the conversion and selectivity, and the most proper ratio was 10:1.5. Methane conversion, methanol and formaldehyde selectivities increased with the surface areas of the catalysts. From the $O_2-TPD$ result, it was found that the oxygen species responsible for this reaction might be the lattice oxygen species desorbed at high temperature around $800^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Bulletin of the Korean Chemical Society
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• v.34 no.10
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• pp.3065-3072
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• 2013

Direct synthesis of $H_2O_2$ and in situ oxidative desulfurization of model fuel over Au/Ti-HMS and Au/TS-1 catalysts has been comparatively investigated in water or methanol. Maximum amount (82%) of active $Au^0$ species for $H_2O_2$ synthesis was obtained. Au/Ti-HMS and Au/TS-1 exhibited the contrary performances in $H_2O_2$ synthesis as $CH_3OH/H_2O$ ratio of solvent changed. $H_2O_2$ decomposition and hydrogenation in water was inhibited by the introduction of methanol. Effect of $O_2/H_2$ ratio on $H_2O_2$ concentration, $H_2$ conversion and $H_2O_2$ selectivity revealed a relationship between $H_2O_2$ generation and $H_2$ consumption. The highest dibenzothiophene removal rate (83.2%) was obtained over Au/Ti-HMS in methanol at 1.5 of $O_2/H_2$ ratio and $60^{\circ}C$. But removal of thiophene over Au/TS-1 should be performed in water without heating to obtain a high removal rate (61.3%). Meanwhile, $H_2$ conversion and oxidative desulfurization selectivity of $H_2$ were presented.