• 환경위생공학
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• 제16권2호
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• pp.91-99
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• 2001

Cross linked chitosan beads showed high selective adsorption abilities in order of $Au^{3+}$ > $Hg^{2+}$ > $Cu^{2+}$ > $Cd^{2+}$ > $Pt^{4+}$ > ${UO_2}^{2+}$ ions in mixed solution of various metal ions at pH 4.5. N-methyltyiobenzylated chitosan beads(MTB-chitosan beads) were prepared treating with p-(methylthio) benzaldehyde after cross linking of chitosan beads to give them a high selectivity in adsorption of metal ions. The MTB-chitosan beads demonstrated their selectivity on precious metals among various metal ions distinctively. Particularly, the MTB-chitosan had a peculiar selective adsorption on $Pd^{2+}$, $Au^{2+}$, and $Hg^{2+}$ions whilst the cross linked chitosan beads showed its high adsorption on $Pd^{2+}$ at pH 1.1. On the other hand, the cross linked chitosan beads showed its superiority in selective adsorption on $Au^{2+}$, $Cu^{2+}$, and $Hg^{2+}$ions to the MTB-chitosan at pH 4.5 of the test solution. Thus metal selectivities were given to chitosan beads through chemical modifications.

• 한국연소학회지
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• 제13권4호
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• pp.47-53
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• 2008

The reaction mechanism of methane dry reforming has been investigated using an arc-jet reactor. The effects of input power, $CO_2/CH_4$ and added $O_2$ were investigated by product analysis, including CO, $H_2$, $C_{2}H_{Y}$ and $C_{3}H_{Y}$ as well as $CH_4$ and $CO_2$. In the process, input electrical power activated the reactions between $CH_4$ and $CO_2$ significantly. The increased feed ratio of the $CO_2$ to $CH_4$ in the dry reforming does not affect to the $CH_4$ conversion. but we could observe increase in CO selectivity together with decreasing $H_2$ generation. Added oxygen can also increase not only CO selectivity but also $CH_4$ conversion. However, hydrogen selectivity was decreased significantly due to a increased $H_{2}O$ formation.

• 멤브레인
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• 제18권2호
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• pp.146-156
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• 2008

본 연구에서는 높은 투과도를 갖는 고분자량의 PTMSP를 합성하고 PTMSP와 hydroxy-terminated PDMS로부터 PTMSP-PDMS graft copolymer를 합성하였다. 그리고 PTMSP-PDMS graft copolymer에 TEOS의 함량을 15, 30, 50 wt%로 달리하여 졸-겔 방법에 의해 PTMSP-PDMS-silica 복합물을 제조하였다. PTMSP-PDMS-silica/PEI 복합막의 물리화학적 특성은 $^1H$-NMR, FT-IR, TGA, XPS, GPC, SEM 등을 사용하여 조사하였고, $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4,\;n-C_4H_{10}$ 기체에 대한 기체 투과도와 선택도 성질을 고찰하였다. 복합막의 투과도는 TEOS의 함량과 압력이 증가함에 따라 증가하였다. 그리고 기체들의 선택도는 TEOS 함량 30wt%에서 최대값을 나타내고 그 이상에서는 감소하는 경향을 나타내었다.

• 멤브레인
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• 제16권2호
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• pp.123-132
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• 2006

PTMSP-silica-PEI 복합막이 PTMSP에 TEOS를 가하여 졸-겔 방법에 의해 제조되었다. 복합막의 특성은 $^1H-NMR$, FT-IR, TGA, XPS, SEM, GPC 등을 사용하여 조사하였고, 복합막의 기체투과 특성을 알아보기 위해 $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4$를 사용하였다. PTMSP-silica-PEI 복합막의 기체 투과도는 TEOS의 함량이 증가함에 따라 증가하였다. $H_2$와 $CH_4$는 15 wt% TEOS에서 PTMSP-PEI 복합막보다 투과도와 선택도가 모두 증가하였다. 한편 $O_2$와 $CO_2$는 선택도의 감소없이 투과도가 증가하는 경향을 나타냈다.

• Bulletin of the Korean Chemical Society
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• 제18권2호
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• pp.218-221
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• 1997

When phenylation of styrene was carried out in the presence of Pd(OAc)2 and PPh3 in benzene, trans-stilbene was obtained in good yield (566%) with high selectivity (98%) under mild condition (55 ℃, 50 psi O2, 20 h). Since trans-stilbene could be produced not only from benzene but also from phenyl group of PPh3 by migration of its phenyl group to Pd, the competitiveness of benzene and the migratory aptitude of aryl group of triarylphosphine toward styrene has been investigated with various phosphines (PR3: P(p-C6H4CH3)3, P(p-C6H4OCH3)3, P(p-C6H4F)3, P(p-C6H4Cl)3, P(C6H5)3, P(C6H11)3, P(OC4H9n)3, P(CH2C6H5)3 and P(C6F5)3). The yield and selectivity toward trans-stilbene are increased as the basicity of the phosphines increases. The composition of arylated olefin from arylphosphine, in turn, increases as the electronegativity of the substituent on the aryl group of arylphosphines increases.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.378-383
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• 2004

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.439-440
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• 2002

Nano-Crystalline $CeO_2$ particles were dispersed in deionized water with controlled slurry chemicals for CMP test. According to the CMP test, the removal rate of $SiO_2$ layer was mainly controlled by the size and crystallinity of $CeO_2$ particles which can be controlled by the heat-treatment condition during $CeO_2$ synthesis. In contrast, the removal rate of $Si_3N_4$ layer was significantly influenced by the passivation reagent which protects the $Si_3N_4$ surface layer from excessive dissolution during CMP.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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• pp.128-128
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• 2006

• 한국자기공명학회논문지
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• 제15권2호
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• pp.146-156
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• 2011

The line widths and spin-lattice relaxation times of protons in $[N(C_2H_5)_4]_2CoCl_4$ and $[N(CH_3)_4]_2CoCl_4$ single crystals were investigated in the temperature range 160-400 K. The temperature dependences of the spin-lattice relaxation times are attributed to the molecular motions of the ethyl and methyl groups in the $[N(C_2H_5)_4]^+$ and $[N(CH_3)_4]^+$ ions respectively. The NMR line widths indicate that the ethyl groups in $[N(C_2H_5)_4]_2CoCl_4$ have one more degree of freedom than the methyl groups in $[N(CH_3)_4]_2CoCl_4$. The experimental results are interpreted in terms of the reorientations of the methyl and ethyl groups.