• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.863-866
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• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.351-360
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• 1999

A large NaX type zeolite crystal of a uniform particle size of 20${\mu}{\textrm}{m}$ are grown with various H2O content by hydrothermal reaction and added seed crystal (2~3 ${\mu}{\textrm}{m}$) to reactant solution as a function of different adding seed levels from 3 to 15 %. The result that increased purity of NaX zeolite above 95% and homogeneity of crystal size by increasing adding seed levels, also decreased crystallization time. It was explained that adding seed to synthesis solution leaded out increase of surface area of physical contact reaction and directed growth of seed crystal, so more rapid consumption of reaction gel as increase seeding levels.

• 한국초전도ㆍ저온공학회논문지
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• 제1권1호
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• pp.1-6
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• 1999

The microstructures of top seed mult processde $\textrm{YBa}_2\textrm{Cu}_3\textrm{O}_7$.$\delta$ single crystal were studied. Although shape of the seed was not faceted. the growth shape of Y123 single crystal was faceted. It was observed that Y211 phases were trapped in specific spaces of the faceted region. From the microstructural investigation. it was suggested that the segregation of Y211 is due to the difference of growth rates in crystal direction. When a single crystal was grown by the single seed with stepped multi surfaces. a microstrue was grown from multi-seed. The microstructure show the possibility of multi-seed growth. Corn kernel like structure without Y211 phase was observed and seemed to be formed by the diffusion reaction between Y211 phase in crystal and liquid wetted on the crystal. the diagonal line on Y123 crystal was observed that it was formed by the corn kernel like structure.

• 한국결정학회지
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• 제5권2호
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• pp.93-99
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• 1994

K2O/3MOOS/0.SBB03 융제를 사용하여 TSSG 법으로 육성한 Md:Yal3(BO3)4 (NYAB) 단결정의 결정외형 및 표면형상을 연구하였다. <100>과 <120> 종자정을 사용한 경우는 서로 다른 크기의 프리즘 면들과 (101) 면들이 발달하였고 <001> 종자정을 사용하였을 때는 (001) 면이 함께 발달하였다. 종자정의 방향이 <100>또는 <120> 일때 프리즘 면 위에 성장구룽이 많이 형성되었으나, <001> 일때는 이웃하는 (101) 면에 평행한 줄무늬가 형성 되었다. (101) 면은 이차원 핵생성에 의한 성장이 지배적이고, <001> 종지정을 사용할 때 발달하는 (001) 면은 나선형 전위에 의한 성장이 지배적이었다. 종자정의 방향은 성장외형을 변화시키고 성장외형과 결정의 질을 결정하는 중요한 성장변수로 작용하였다.

• 한국결정성장학회지
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• 제9권4호
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• pp.371-376
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• 1999

A large NaX type zeolite crystal of a uniform particle size of 20$\mu\textrm{m}$ are grown with various {{{{{H}_{2}O}}}} content by hydrothermal reaction and added seed crystal (2~3$\mu\textrm{m}$) to reactant solution as a function of different adding seed levels from 3 to 15%. The result that increased purity of NaX zeolite above 95% and homogeneity of crystal size by increasing adding seed levels, also decreased crystallization time. It was explained that adding seed to synthesis solution leaded out increase of surface area for physical contact reaction and directed growth of seed crystal, so more rapid consumption of reaction gel as increase seeding levels.

• 한국초전도ㆍ저온공학회논문지
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• 제24권3호
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• pp.35-40
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• 2022

To fabricate large grain YBCO bulk superconductors by melt process, Sm123 single crystal with a high melting point are mostly used as seeds. However, it also uses Y123 film deposited on MgO single crystal substrate. This study investigated the growth behavior of the Y123 grain during a melt process when single grain YBCO bulk was used as a seed. Single grain Y123 bulk was grown when the seed size was small. When the seed size was relatively large, multiple grains were grown but the grains were still large. Y123 seed crystal was completely decomposed during high temperature anneal at 1040℃ and new Y123 crystals were nucleated during a slow cooling stage below a peritectic temperature. Thereafter, newly formed Y123 crystals from the seed area are thought to grow into the Y1.8 powder compact. The crystallographic orientations of newly nucleated Y123 grains are independent of the crystallographic orientation of Y123 seed. It is thought that the crystallographic orientation of newly nucleated Y123 crystal can be controlled by using Y211-free Y123 single crystal as a seed of homo-seeding melt growth.

• 한국결정성장학회지
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• 제9권1호
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• pp.6-13
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• 1999

NaX zeolite 결정을 성장시키기 위하여 ${4.12{Na}_{2}O{\cdot}{Al}_{2}{O}_{3}{\cdot}3.5{SiO}_{2}{\cdot}593{H}_{2}O$의 몰비를 가진 모액에 합성된 NaX powder(1~2$\mu\textrm{m}$)를 seed를 첨가하였다. 그 결과 초기 혼합물에 seed를 첨가하므로 결정화 시간을 감소시킬수 있었으며, 결정의 크기도 감소하는 것으로 나타났다. 하지만 결정화 시간을 증가시키면 NaX zeolite 결정은 보다 안정한 NaP zeolite와 또 다른 상으로의 전이가 발생하였다. 본 연구에서 우리는 이러한 결과에 대해서 XRD, SEM, FT-IR과 BET을 이용하여 상세하게 연구하였다.

• 한국결정성장학회지
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• 제12권4호
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• pp.190-195
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• 2002

NaX seed결정(10~20 $\mu$m)을 $3.5Na_2$O : $Al_2O $: $2.1SiO_2$ : $1000H_2$O 용액에 0.5~2.0g 첨가한 후 연속결정화법으로 50 $\mu$m의 균일한 결정을 성장시켰다. 연속결정화법에 의한 결정성장을 시험하기 위하여, 모액을 7일, 5일, 3일, 2일과 1일 간격으로 공급하였다. Seed 첨가의 결과는 첨가하지 않은 용액과 비교하여 보다 균일하고 큰 결정들을 얻었다. 합성용액에 seed의 첨가는 반응물과 물리적인 접촉 면적을 초래하여 합성 겔의 핵성장 없이 seed 결정의 결정성장을 확인할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.222-226
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• 2008

With different seed adhesion methods, we obtained two different aspects with or without micro-bubble in the interface between a seed and a dense graphite seed holder. To improve the quality of SiC wafer, we introduced a sucrose caramelizing step at the seed adhesion using the sucrose, The n-type 2 inch single crystal exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of about $10^{16}/cm^3$ was determined from Hall measurements, As compared to the characteristics of SiC crystal grown with micro-bubble in the interface between the seed and the dense graphite seed holder, the SiC crystal grown without micro-bubble definitely exhibited lower resistivity, lower micropipe density and higher mobility relatively.