• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.273-277
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• 2015

We investigated secondary electron emission characteristics of ZnO thin films prepared by pulsed laser deposition method with respect to the ambient oxygen pressure and the substrate temperature during the deposition. X-ray diffraction, UV-Vis spectrometry, atomic force microscopy, and ${\gamma}$-FIB were used to examine the structural, optical transmission, surface morphology, and secondary electron emission properties of the films, respectively. The secondary electron emission coefficient of the ZnO films increases as the O/Zn ratio of the films increases which was thought to result from either the ambient oxygen pressure increase or the substrate temperature decrease and as the grain size of the films decreases. It was confirmed that ZnO has better secondary electron emission characteristics than those of MgO, which is currently widely used as a material for PDP protecting layers.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.200-202
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• 1996

MgO film was deposited on the glass substrate by the hollow cathode discharge ion plating method and the characteristics of the MgO thin film such as deposition rate, crystalline orientation, surface morphology and secondary electron coefficient were investigated. The deposition rate of MgO thin films were $430^{\sim}1270{\AA}$/min at various temperatures and biases. The crystalline orientation of the MgO thin film changed from (200) to (220) upon increasing the HCD current from 100A to 200A. These results indicated that the crystallin orientation of the MgO thin film was determined by the super-saturation ratio. The (200) peak decreased and the (220) peak increased as the substrate bias increased, while both peaks increased as the substrate temperature increased. The grain size increased as the substrate bias increased and the secondary electron emission coefficient increased as the substrate bias increased.

• Microbiology and Biotechnology Letters
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• v.16 no.5
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• pp.427-431
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• 1988

The simultaneons mineralization of aniline and other secondary carbon sources by Pseudomonas testosteroni 6Fl were evaluated by the lag time and the enzyme induction level. The lag time for aniline mineralization by P. testosteroni 6Fl was 7 hours, whereas the lag time for aniline and readily utilizable secondary substrates were 1-3 hours. This stimulated degradation resulted from the simultaneous use of secondary substrates and aniline, the increased rate of enzyme induction, and the in-creased rate of the cell growth. The enzyme induction level of P. testosteron 6F1 were varied according to the kinds of secondary substrate.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

• Journal of Mushroom
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• v.17 no.3
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• pp.85-92
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• 2019

Over a million tons of spent mushroom substrate (SMS) are generated as by-products of mushroom cultivation every year in Korea. Disposal of SMS by mushroom farmers is difficult, therefore, recycling solutions that do not harm the environment are necessary. SMS consists of mushroom mycelia and residues of fruiting bodies, containing a variety of bioactive substances, such as extracellular enzymes, antimicrobial compounds, and secondary metabolites. This paper reviews utility of SMS for bioremediation, controlling plant disease, and production of lignocellulytic enzymes, organic fertilizer, and animal feed.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.240-247
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.79-85
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• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.38-44
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• 2008

Contiuous c-oriented zeolite MFI films $(<35{\mu}m)$ were prepared by hydrothermal secondary growth of silicalite-1 seed crystal in the surface of alumina porous substrate and silicon substrate. The supported films were characterized with scanning electron microscopy and X-ray diffraction. Effect of substrate surface roughness were investigated and a mechanism for c-oriented film formation and characteristic dom-like defects formation which is observed after seeding growth was discussed. The roughness of substrate plays an important role.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.