• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1505-1509
• /
• 2004

A novel technique for fine particle beam focusing under the atmospheric pressure is introduced using a radiation pressure assisted aerodynamic lens. To introduce the radiation pressure in the aerodynamic focusing system, a 25 mm plano-convex lens having 2.5 mm hole at its center is used as an orifice. The particle beam width is measured for various laser power, particle size, and flow velocity. In addition, the effect of the laser characteristics on the beam focusing is evaluated comparing an Ar-Ion continuous wave laser and a pulsed Nd-YAG laser. For the pure aerodynamic focusing system, the particle beam width was decreased as increasing particle size and Reynolds number. For the particle diameter of 0.5 ${\mu}m$, the particle beam was broken due to the secondary flow at Reynolds number of 694. Using the Ar-Ion CW laser, the particle beam width becomes smaller than that of the pure aerodynamic focusing system about 16 %, 11.4 % and 9.6 % for PSL particle size of 2.5 ${\mu}m$, 1.0 ${\mu}m$, and 0.5 ${\mu}m$ respectively at the Reynolds number of 320. Particle beam width was minimized around the laser power of 0.2 W. However, as increasing the laser power higher than 0.4 W, the particle beam width was increased a little and it approached almost a constant value which is still smaller than that of the pure aerodynamic focusing system. The radiation pressure effect on the particle beam width is intensified as Reynolds number decreases or particle size increases relatively. On the other hand, using 30 Hz pulsed Nd-YAG laser, the effect of the radiation pressure on the particle beam width was not distinct unlike Ar-Ion CW laser.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.105.1-105.1
• /
• 2016

Many of the complex materials developed today derive their unique properties from the presence of multiple phases or from local variations in elemental concentration. Simply performing analysis of the bulk materials is not sufficient to achieve a true understanding of their physical and chemical natures. Secondary ion mass spectrometer (SIMS) has met with a great deal of success in material characterization. The basis of SIMS is the use of a focused ion beam to erode sample atoms from the selected region. The atoms undergo a charge exchange with their local environment, resulting in their conversion to positive and negative secondary ions. The mass spectrometric analysis of these secondary ions is a robust method capable of identifying elemental distribution from hydrogen to uranium with detectability of the parts per million (ppm) or parts per billion (ppb) in atomic range. Nano secondary ion mass spectrometer (Nano SIMS, Cameca Nano-SIMS 50) equipped with the reactive ion such as a cesium gun and duoplasmatron gun has a spatial resolution of 50 nm which is much smaller than other SIMS. Therefore, Nano SIMS is a very valuable tool to map the spatial distribution of elements on the surface of various materials In this talk, the surface imaging applications of Nano SIMS in KBSI will be presented.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.221-223
• /
• 2002

We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

• Mass Spectrometry Letters
• /
• v.12 no.1
• /
• pp.26-30
• /
• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• Journal of Korean Society of Steel Construction
• /
• v.25 no.1
• /
• pp.47-59
• /
• 2013

This study that is a successive secondary study right after the primary bending strength test of a new form of U-shape hybrid composite beam is a cyclic seismic test of U-shape hybrid composite beam and column conncetion. Three specimens are built for the variables which are kinds of columns, depth of beam, continuity or discontinuity of upper plate of beam, and a number of steel bars of end-beam. Kinds of columns are a reinforcement concrete column and a ACT column of CFT shape, and beam depth are 300, and 500 mm. Detail of connection is bolt connection with using a short bracket that is commonly use. As the result, deformability of 2~4% is ensured the floor displacement angle. If it is the negative moment, the maximum moment shows that its capacity is above the nominal moment.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.32 no.1
• /
• pp.87-92
• /
• 2016

The purpose of this clinical report was to show anatomical variations in permanent maxillary second molar using computed tomography (CT). This case report describes the application of CT to detect the unusual root anatomy of maxillary second molar with 2 separate palatal roots for successful endodontic treatment procedures. The use of cone beam computed tomography (CBCT) can overcome the limitation of the periapical standard radiography caused by the overlap of buccal and secondary palatal roots.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.13 no.3
• /
• pp.40-47
• /
• 1999

We have established a pulsed low-energy large-aIXTture electron beam(LELAEB) generation system with an energy of 2OO[keV], current of 1[A], pulse repetition rate of 200[Hz], and several tens of ${\mu}s$ pulse width. The system is characterized by a cold cathode that is simpler than the hot cathode. Electron beam does not need to be scanned over target objects because of large beam aIXTture of $300[\textrm{cm}^2]$. Electron source is secondary electrons that are generated when the ions from the glow discharge collide on the cathode surface. In this paper, We report about the design and manufacture of LELAEB generation system based on the theoretical analysis in order to study lXlssibility of increasing the efficiency of IELAEB accelerator. We also report on the possibility of large aperture beam current generation and the current density uniformity based on the experiIrental results.esults.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.530-531
• /
• 2013

3 MeV protonirradiated SrTiO3 (STO) single crystal exhibits a blue and green mixed luminescence. However, the same proton irradiated STO deposited with very thin Pt layer does not show any luminescence. This Pt layer involved in preventing the damage caused by arcingthat comes from tens of kV surface voltage build-up due to secondary electron induced charge up at the surface of insulator during ion beam irradiation. It implies that luminescence of ion irradiated STO originated from the modified STO surface layer caused by arcing rather than direct ion beam irradiation effect. Atmospheric pressure plasma, a simple and cost-effective method, treated STO also exhibits the same kind of blue and green mixed luminescence as the ion beam treated STO, because this plasma also creates a surface damage layer by arcing.

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1767-1769
• /
• 1998

We have established a pulsed electron beam generation system with an energy of 200[keV], pulse repetition rate of 200[Hz], and several tens of [${\mu}s$] pulse width. The system is characterized by a cold cathode that is simpler than the hot cathode. Target object does not need to be scanned because of large aperture electron beam of 300[$cm^2$]. Electron source is secondary electrons that are generated when the ions from the glow discharge collide on the cathode surface. In this paper, the discharge current characteristics are investigated experimentally as a function of He gas pressure in order to obtain stable glow discharge. And computer simulations are carried out as a preliminary study for the development of low energy large aperture electron beam generator. The variation of electon beam current is investigated as a function of rising time of high voltage when 20[kV] potential is applied in 20[mTorr] pressure.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.11a
• /
• pp.251-252
• /
• 2007