• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.369-375
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• 2006

[ $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{x}Fe_{1-x}O_{3-{\delta}}$ ] [x=0.8, 0.2](BSCF) powders were synthesized by a Glycine-Nitrate Process (GNP) and the electrochemical performance of the BSCF cathode on a scandia stabilized zirconia, $[(Sc_{2}O_3)_{0.11}(ZrO_2)_{0.89}]-1Al_{2}O_3$ was investigated. In order to prevent unfavorable solid-state reactions between the cathode and zirconia electrolyte, a GDC ($Gd_{0.1}Ce_{0.9}O_{2-{delta}}$) buffer layer was applied on ScSZ. The BSCF (x = 0.8) cathode formed on GDC(Buffer)/ScSZ(Disk) showed poor electrochemical property, because the BSCF cathode layer peeled off after the heat-treatment. On the other hand, there were no delamination or peel off between the BSCF and GDC buffer layer, and the BSCF (x = 0.2) cathode exhibited fairly good electrochemical performances. It was considered that the observed phenomenon was associated with the thermal expansion mismatch between the cathode and buffer layer. The ohmic resistance of the double layer cathode was slightly lower than that of the single layer BSCF cathode due to the incorporation of platinum particle into the BSCF second layer.

• Transactions of the Society of Information Storage Systems
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• v.3 no.3
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• pp.129-134
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• 2007

Boron nitride (BN) is a highly attractive material for wear resistant applications of mechanical components. BN is super hard and it is the second hardest of all known materials. It also has a high thermal stability, high abrasive wear resistance, and in contrast to diamond, BN does not react with ferrous materials. The motivation of this work is to investigate the tribological properties of BN for potential applications in ultra-precision components for data storage, printing, and other precision devices. In this work, the wear characteristics of BN thin films deposited on DLC or Ti buffer layer with silicon substrate using RF-magnetron sputtering technique were analyzed. Wear tests were conducted by using a pin-on-disk type tester and the wear tracks were measured with a surface profiler. Experimental results showed that wear characteristics were dependent on the sputtering conditions and buffer layer. Particularly, BN coated on DLC layer showed better wear resistant behavior. The range of the wear rates for the BN films tested in this work was about 20 to $100{\mu}m^3$/cycle.

• Journal of Magnetics
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• v.2 no.1
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• pp.7-11
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• 1997

The dependence of magnetoresistance (MR) ratio on various variables like the thickness of the second Co layer, on the presence of cap layer, on deposition field (Hdep) and on annealing in Co/Cu/Co sandwiches was investigated. Spin-valve sandwiches were deposited on the corning glass by means of the 3-gun dcmagnetron sputtering at a 5 mTorr partial Ar pressure and room temperature. The deposition field was varied from 70 Oe to 720 Oe. The MR curve was measured by the four-terminal method with applied magnetic field up to 1000 Oe perpendicular to the direction of a current in the film plne. The MR ratio of glass/Fe(50${\AA}$)/Co(17${\AA}$)/Cu(24${\AA}$)/Cot(${\AA}$) fabricated by making 50 ${\AA}$ of Fe buffer layer has the maximum value of 8.2% when the thickness of the second Co layer was 17${\AA}$and the deposition field was 350 Oe. In the case of glass/Fe(50${\AA}$)/Co(17${\AA}$)/Cu(24${\AA}$)/Cot(${\AA}$) with Cu cap layer on top, the decrease in the MR ratio seemed to relate with the oxidation of the second Co layer. Samples prepared with deposition field showed greater MR ratios through the formation of more complete spin valve films. After annealing for 2 hours at 300$^{\circ}C$, the MR ratio of the samples prepared with deposition field decreased rapidly while the MR raito of the sample prepared without the field remained.

• Journal of Communications and Networks
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• v.12 no.6
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• pp.568-576
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• 2010

The paper presents a control architecture aimed at implementing bandwidth optimization combined with call admission control (CAC) over a digital video broadcasting (DVB) return channel satellite terminal (RCST) under quality of service (QoS) constraints. The approach can be applied in all cases where traffic flows, coming from a terrestrial portion of the network, are merged together within a single DVB flow, which is then forwarded over the satellite channel. The paper introduces the architecture of data and control plane of the RCST at layer 2. The data plane is composed of a set of traffic buffers served with a given bandwidth. The control plane proposed in this paper includes a layer 2 resource manager (L2RM), which is structured into decision makers (DM), one for each traffic buffer of the data plane. Each DM contains a virtual queue, which exactly duplicates the corresponding traffic buffer and performs the actions to compute the minimum bandwidth need to assure the QoS constraints. After computing the minimum bandwidth through a given algorithm (in this view the paper reports some schemes taken in the literature which may be applied), each DM communicates this bandwidth value to the L2RM, which allocates bandwidth to traffic buffers at the data plane. Real bandwidth allocations are driven by the information provided by the DMs. Bandwidth control is linked to a CAC scheme, which uses current bandwidth allocations and peak bandwidth of the call entering the network to decide admission. The performance evaluation is dedicated to show the efficiency of the proposed combined bandwidth allocation and CAC.

• Journal of Information Processing Systems
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• v.2 no.2
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• pp.76-81
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• 2006

A PDA is used mainly for downloading data from a stationary server such as a desktop PC in an infrastructure network based on wireless LAN. Thus, the overall performance depends heavily on the performance of such downloading with PDA. Unfortunately, for a PDA the time taken to receive data from a PC is longer than the time taken to send it by 53%. Thus, we measured and analyzed all possible factors that could cause the receiving time of a PDA to be delayed with a test bed system. There are crucial factors: the TCP window size, file access time of a PDA, and the inter-packet delay that affects the receiving time of a PDA. The window size of a PDA during the downstream is reduced dramatically to 686 bytes from 32,581 bytes. In addition, because flash memory is embedded into a PDA, writing data into the flash memory takes twice as long as reading the data from it. To alleviate these, we propose three distinct remedies: First, in order to keep the window size at a sender constant, both the size of a socket send buffer for a desktop PC and the size of a socket receive buffer for a PDA should be increased. Second, to shorten its internal file access time, the size of an application buffer implemented in an application should be doubled. Finally, the inter-packet delay of a PDA and a desktop PC at the application layer should be adjusted asymmetrically to lower the traffic bottleneck between these heterogeneous terminals.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.96-110
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• 1995

Traveling-wave electrodes for the high-speed Ti:LiNbO$_{3}$ modulators are designed. For a solution to the problems of 1) phase-velocity mismatching between the optical wave and the Modulating M/W, 2) M/W electrode characteristic impedance mismateching, we assume devices with 1$\mu$m thick SiO$_{2}$ buffer layer between the electrode and the Ti:LiNbO$_{3}$ substrate. The electrode analyses are performed by the FEM using the second-order triangular elements. The optimum design parameters to satisfy the phase-velocity matching and the characteristic impedance matching are sought for. By use of the analyses' results, a Mach-Zehnder optical modulator with a CPW electrode is designed as an example. the band-width estimation is also illustrated.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.8
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• pp.829-837
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• 2012

Direct numerical simulations were carried out for turbulent channel flows with $Re_{\tau}$ = 180, 395 and 590 to investigate the turbulent flow structure related to the Reynolds shear stress. By examining the probability density function, the second quadrant (Q2) events with the largest contribution to the mean Reynolds shear stress were identified. The change in the inclination angle of Q2 events varies with wall units in $y^+<50$ and with the channel half height in y/h > 0.5. Conditionally averaged flow fields for the Q2 event show that the flow structures associated with Reynolds shear stress are a quasi-streamwise vortex in the buffer layer and a hairpin-shaped vortex in the outer layer. Three-dimensional visualization of the distribution of high Reynolds shear stress reveals that the organization of hairpin vortices in the outer layer having a size of 1.5~3 h is associated with large-scale motions with high Reynolds shear stress in the outer layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.235-235
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• 2003

The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.