• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.65-70
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• 2015

A study on thermal properties for a single-layer metal and two-layer composites was investigated for the heat-sink application. For the single-layer metal, an aluminum alloy (Al6061) was selected. A screen printed aluminum nitride (AlN) layer on the Al6061 substrate was chosen for the two-layer composites. The thermal conductivity of the sample was determined from the thermal diffusivity measured by the light flash analysis (LFA), specific heat and density. Measured thermal property values were compared to calculated values using the data from the references. The thermal conductivity of composites with screen printed AlN layer on the Al6061 substrate decreased linearly with increasing the thickness of AlN layer. Measured values of the thermal conductivity for composites with $53{\mu}m$ and $163{\mu}m$ thick AlN layers were $114.1W/m{\cdot}K$ and $72.3W/m{\cdot}K$, respectively. In particular, the thermal conductivity of the screen-printed AlN layer was demonstrated by appling the rule of mixture in view point of thermal resistivity. Measured values of the thermal conductivity for AlN layers with the thickness of $53{\mu}m$ and $163{\mu}m$ showed $9.35W/m{\cdot}K$ and $12.40W/m{\cdot}K$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.623-629
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• 2014

For the semiconductor device safety from over current in the digital electronic circuit system must be surely designed that it's surface mount type micro fuse device. In this paper, We has analysed to the fusing character of micro fuse as a function changed thickness of thermosetting ink epoxy. To the change of thermosetting ink epoxy thickness with in production lot, in the electrically character (fusing test in the 2 multiple over current and 10 multiple over current, surface temperature test in the 1.25 multiple over current) of micro fuse has been tested. According to the electrically character result, changed thickness of thermosetting ink epoxy in designed micro fuse withheld direct effect in both end resistance changes. Also, because high thermal energy in the micro fuse test of over current was occurred to effect such as thermal runaway and explosion. Therefore, screen printing process in the design of micro fuse using thermosetting ink epoxy is very important for production quality improvement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.685-688
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.550-553
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.200-201
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• 2005

PFerroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(40/60) and PZT(60/40) paste were made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films were decreased with increasing the applied pressure and the thick films pressed at 0.6 ton/$cm^2$ showed the dense microstructure and thickness of about 76${\mu}m$. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at 0.6 ton/$cm^2$ were 17.04${\mu}Ccm^2$, 78.09 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.77-79
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• 1999

Bi$_2$Sr$_2$CaCu$_2$O(Bi-2212) thick films were fabricated on Y211 substrate by screen printing method. The aim of the study was to fabricate superconducting thick films on Y211 substrate by MPMG process. For this study, patterned samples by screen printing method were heated with MPMG process. The thickness of Bi2212 on substrate was about 20 ${\mu}{\textrm}{m}$ and these samples showed many Bi- 2212 phases.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.35-38
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• 2005

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.142-145
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• 2004

[ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.656-658
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• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively