• 제목/요약/키워드: scratch mechanism

검색결과 40건 처리시간 0.026초

AFM을 이용한 PMMA (Poly Methyl Methacrylate) 박막의 나노트라이볼로지 연구 (Nanotribology of PMMA Thin Films Using an AFM)

  • 김승현;김용석
    • 소성∙가공
    • /
    • 제13권1호
    • /
    • pp.59-64
    • /
    • 2004
  • Nano-scratch tests were performed on PMMA thin films spin-coated on a Si substrate using an atomic force microscopy (AFM) with loads ranging form 10nN to 100nN. At low loads, a ridge pattern was formed on the PMMA thin film surface. No wear particles were observed during the pattern-forming mild wear. At high loads, severe wear by plowing occurred, accompanied by wear particles. The film with the highest hardness showed the highest wear resistance. Friction force generated during the scratching was measured, which was closely related with surface deformation of the film. A simple empirical equation to deduce scratch hardness of the film from a linear fixed-distance scratch test was proposed, and scratching-speed dependency of the scratch hardness was displayed.

ILD CMP 공정중 발생하는 Scratch 발생기구에 관한 연구 (Formation mechanism of scratches on ILD CMP)

  • 김인곤;최재건;박진구
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.119-120
    • /
    • 2008
  • ILD CMP process has been well accepted for the planarization of the dielectric oxide film and becomes a critical process in ULSI manufacturing due to the rapid shrinkage of the design rule for the device. In total manufacturing process steps for a device, the proportion of ILD CMP process has been gradually increased. Ever since ILD CMP has been introduced, the scratches have been a major defects on polished surfaces which cause the electrical shorts between vias or metal lines [1,2]. It was reported that micro-scratches are caused by large, irregularly shaped particles during CMP process. Therefore, most of the CMP users have used < 5 m POU filter to remove and reduce the scratch source from the slurry. However, the scratch has always been the biggest concern in ILD polishing whatever preventive actions are taken. Silica and ceria slurries are widely used for ILD CMP process. There are not much differences in generated scratches and their formation mechanism. In this study, the scratches were investigated as a function of polishing conditions with possible explanation on formation mechanism in ILD CMP.

  • PDF

Utilizing Advanced Pad Conditioning and Pad Motion in WCMP

  • Kim, Sang-Yong;Chung, Hun-Sang;Park, Min-Woo;Kim, Chang-Il;Chang, Eui-Goo
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
    • /
    • pp.171-175
    • /
    • 2001
  • Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion- usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder type conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usually scraped. Figure 1 shows the typical shape of scratch damaged from diamond. e suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning. so new designed Flat stripper was introduced.

  • PDF

Glucosylsphingosine Induces Itch-Scratch Responses in Mice

  • Kim, Hyoung-June;Kim, Kwang-Mi;Noh, Min-Soo;Yoo, Hye-Jin;Lee, Chang-Hoon
    • Biomolecules & Therapeutics
    • /
    • 제18권3호
    • /
    • pp.316-320
    • /
    • 2010
  • Pruritus is one of major symptoms in atopic dermatis. The pathophysiological mechanism of pruritus is unclear. The search for pruritogen is important in elucidating the pathophysiological mechanism of pruritus in atopic dermatitis. Glucosylsphingosine (Gsp) is upregulated in the strateum corneum of atopic dermatitis patients. We investigated to determine whether Gsp induces itch-scratch responses (ISRs) in mice. Intradermal administration of Gsp induces ISRs. Gsp dose-dependently induced scratching response at 50-500 nmol/site range. Pretreatment with naltrexone, an opioid $\mu$ receptor antagonist, and capsaicin, a TrpV1 receptor agonist, inhibited Gsp-induced ISRs. Additionally, Gsp-induced ISRs were also suppressed by cyproheptadine, an antagonist of serotonin receptor. These findings suggest that Gsp-induced scratching might be at least partly mediated by capsaicin-sensitive primary afferents, and the opioids receptor systems might be involved in transmission of itch signaling in the central nervous system. Furthermore, our findings suggest that Gsp-induced ISRs may be attributable to the serotonin-mediated pathways and Gsp is not any more one of byproducts of abnormal skin barrier but can lead to induce pruritus, one of typical symptoms of atopic dermatitis.

폐기물매립지에서 표면결함이 있는 지오멤브레인의 열적 안정성 및 응력균열저항성 평가 (The Evaluations of Thermal Stability and Stress Crack Resistance of Geomembranes with Surface Defects in the Landfill)

  • 전한용;이광열;이재영
    • 한국지하수토양환경학회지:지하수토양환경
    • /
    • 제6권1호
    • /
    • pp.53-62
    • /
    • 2001
  • 표면결함이 고밀도 폴리에틸렌 지오멤브레인의 열적 안정성과 응력균열저항성에 미치는 영향을 온도와 표면 결함 부여조건을 달리한 환경조건에서 역학적 특성, 화학저항성 및 피로시간을 측정하여, 조사하였다. 특별 고안된 장치를 사용하여 인위적으로 지오멤브레인 표면에 결함을 부여하였다. 표면결함은 표면결함 유도매체의 전단속도 100mm/min에서 표면결함 유도매체의 크기가 작을수록, 표면결함 부여횟수가 커질수록 증가하였다. 또한 이 조건에서 인장강도는 감소하였지만 인장신도는 증가하였다. 표면결함 부여조건이 같을 경우 고온으로 갈수록 그리고 침지시간이 길어질수록 인장강도는 감소되고 인장신도는 증가하여 표면결함이 부여된 지오멤브레인의 화학저항성은 저하되었다. 끝으로 응력균열저항성 시험 결과 온도가 높아질수록 표면결함이 부여된 지오멤브레인의 피로시간은 단시간 영역으로 이동되었다.

  • PDF

Utilizing Advanced Pad Conditioning and Pad Motion in WCMP

  • Kim, Sang-Yong;Chung, Hun-Sang;Park, Min-Woo;Kim, Chang-Il;Chang, Eui-Goo
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
    • /
    • pp.171-175
    • /
    • 2001
  • Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

  • PDF

용융 붕사욕 침지법에 의해 금형용 강에 형성된 VC coating층의 밀착성과 내마모성에 관한 연구 (A study on Adhesion and Wear Resistance of Vanadium Carbide Coating on Die Steels by Immersing in Molten Borax Bath)

  • 이병권;남태운
    • 열처리공학회지
    • /
    • 제13권2호
    • /
    • pp.71-84
    • /
    • 2000
  • A study on adhesion and wear resistance of VC(vanadium carbide) coating on die steels, STD11 and STD61, has been carried out. The VC coating on the die steels was made by immersing them in molten borax bath, a kind of TRD(thermo-reactive deposition and diffusion). Adhesion strength and wear resistance were investigated using scratch test, indentation test and plate-disc test(Ogoshi type) respectively. The influence of sliding distance on the amount of wear has been determined and dominant wear mechanisms has been characterized using optical microscopy, scanning electron microscopy and EDS spectroscopy. The critical adhesion strength($L_c$) between VC coating layer and substrate(STD11) was increased to 60N($L_c$) in the scratch test. In the case of STD61, the strength increased to 24N. The wear resistance of VC coated die steels was excellent because the diffusion layer formed just below the coating layer. The dominant wear mechanism was identified as adhesive wear for VC coating die steels which were worn by combination of cracking and plucking of VC fragments and disc.

  • PDF

스크래치 가공기술 개발에 따른 잉여 진동 성분 분석에 관한 연구 (A Study on the Redundant Vibration Analysis for the Development of Scratch Processing Technology)

  • 전찬대;차진훈;윤신일;한상보
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2005년도 춘계학술대회 논문집
    • /
    • pp.1660-1663
    • /
    • 2005
  • Unwanted vibrations are inevitably induced in other directions when pure unidirectional vibration motion is desired for the vertical scratching mechanism. Pure vertical vibration motion of the scratching machine can be obtained by driving identical two motors with symmetrically positioned eccentric unbalance masses. The desired optimal condition for driving pure vertical vibration for the scratching machine is assumed to be the resonance condition in that direction. Imposing the flexibility of the scratching machine in the horizontal direction, we can find out the amount of horizontal vibration component while maintaining the resonance in vertical direction. The desired stiffness in horizontal direction which produces the minimum vibration in horizontal direction are defined which can be used as a guide line to design the supporting structure of the scratching machine.

  • PDF