• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.391-394
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• 2001

A new type plasma reactor is proposed to decompose CF4 diluted with N2 gas in atmospheric pressure. The arc plasmas is surrounded with a waterwall which acts as a source of water vapor, the solvent of HF, resultant product after decomposition, and conveyer to take away fluorine compound from exhaust gas. Abatement more than 99% is achieved by small size plasmas such as 1 cm in diameter, 25cm in length and 3.4KW of DC discharge power in such gas as the mixture of 100 sccm of CF4 and 15 slm of N2. Reactors of this type are to be expanded to such a system as Nitrogen flow of 50 slm with 200 sccm of CF4 and 7-8 KW discharge power.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.52-52
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• 2003

Gbit급 DRAM 커패시터의 고유전물질로 각광받고 있는 (Ba,Sr)TiO$_3$〔BST〕의 하부전극 물질로서 (Ba,Sr)RuO$_3$〔BSR〕의 적용 가능성을 연구하였다. BSR은 BST와의 구조적, 화학적 유사성으로 인하여, BST와 하부전극사이의 저유전 계면반응 충의 생성을 최소화함으로서 향상된 전기적 특성을 구현 할 수 있다. 본 연구에서는 methoxyethoxytetramethylheptanedionate(METHD) 소스를 적용한 유기 화학 기상 증착법(MOCVD)법을 이용하여 BSR을 증착하였으며, 증착된 BSR의 특성을 x-ray photoelectron spectroscopy(XPS) 분석법으로 기화기 온도 변화에 따른 BSR박막의 특성을 분석하였다. 증착온도 55$0^{\circ}C$에서 소스의 기화효율에 영향을 미치는 기화기온도를 변화시켜가며 BSR박막의 증착실험을 진행하였으며 소스 유입 속도 0.075sccm, 증착 온도 55$0^{\circ}C$, Ar/O2 = 200/350 sccm일 때 기화기 온도를 260~28$0^{\circ}C$까지 1$0^{\circ}C$간격의 변화로 증착실험을 수행하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.57-58
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• 2008

Microcrystalline (${\mu}c$) silicon thin films were prepared on glass by plasma-enhanced-chemical-vapor-deposition (PECVD) at various substrate temperature, and dilution ratio of $H_2$ with $SiH_4$. The structural and optical properties of. the ${\mu}c-Si$ thin films were investigated using XRD and UV-VIS spectrophotometer. The ${\mu}c-Si$ thin film with 42 nm grain size was grown at optimal condition of 2.5 Torr, spacing between electrodes of 3cm, deposition time of 3000s, RF power of 200W, substrate temperature of $350^{\circ}C$, $SiH_4$ ($20%SiH_4$+80%He) of 50sccm, and $H_2$ of 100sccm.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.122-129
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• 1994

MWPECVD법으로 CH3CHO-H2 계와 CH4-H2-O2 계로부터 Si 기판 위에 다이아몬드박막을 성장 시키고 성장된 박막을 SEM XRD 및 Raman 분광기로 평가하고 박막과 입자의 성장률을 조사하였다. 마이크로 판전력 950W 반응관압력 80torr 수소유량 200sccm 기판온도 95$0^{\circ}C$ 및 CH3CHO농도 3.5%로 5시간 성장시킨 다이아몬드의 박막성장율은 $4mu$m/hr가 되어고 12%$960^{\circ}C$로 Si기판 위에 5시간 성장시킨 다이아몬드의 박막성장율은 3.2$\mu$m/hr가 되었다.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.470-475
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• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1393-1395
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• 2001

DLC films are deposited by using a modified FCVA system. Carbon amorphous network, surface roughness, internal compressive stress, resistivity, and Hall mobility are studied as a function of nitrogen flow rate (0 $\sim$ 10 sccm). As the nitrogen content is increased in the carbon network, the size of $sp^2$ clusters is increased, the internal compressive stress is decreased, and the resistivity is remarkably decreased. The RMS values of the surface roughness are measured to be in the range of 0.2$\sim$0.5nm. The Hall mobility of DLC film with 3 sccm of nitrogen added is 3.22 $cm^2/V{\cdot}$s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.385-385
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• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.766-769
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• 2008

Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.215-215
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• 1999

상용의 PS가 가지는 소수 특성을 아르곤, 수소, 산소 이온을 이온 보조 반응법을 이용하여 PS의 표면에 조사하여 PS의 표면을 친수성을 증대시켰으며 이때의 친수성의 변화는 각 이온의 비율과 전류의 세기 및 전압의 변화에 따라 측정하였다. 이온 소스는 직경 5cm의 cold hollow cathod ion gun을 이용하였으며 이온 조사량은 5$\times$1014 ~ 1$\times$1017까지 변화시키고 산소의 유량은 0~6sccm까지 변화시키고 수소의 유량 또한 0~6sccm 까지 변화시키면서 극성 용매인 물과의 접촉각을 정적 접촉각 측정기를 이용하여 측정하였다. 또한 일정 조건에서 이온의 조사 후 대기와 물속에서 시간에 따른 물의 접촉각의 변화를 측정하였다. 표면에 형성된 극성 그룹을 조사하기 위하여 XPS를 측정하였다. XPS 측정결과 표면에 C-O, C=O, (C=O)-O와 같은 극성 작용기가 형성되었음을 확인하였으나 PS 표면에 생성된 정확한 작용기를 구분하기 어려웠다. 따라서 좀더 세밀한 조사를 위하여 FT-IR을 이용하여 이온 조사 조건에 따른 PS 표면의 분자단의 Peak 변화를 관찰하였다.