• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.42.2-42.2
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• 2011

$TiO_2$ films were modified by adding a glass frit as a light scattering particle and applied to an anode electrode in dye-sensitized solar cells (DSSCs) to enhance the adhesion between $TiO_2$ and fluorine doped transparent oxide (FTO). Low melting point glass frits at contents of (3 to 7wt%) were added to the nano crystalline $TiO_2$ films. The light scattering properties, photovoltaic properties and microstructures of the photo electrodes were examined to determine the role of the low glass transition temperature ($T_g$) glass frit. Electrochemical impedance spectroscopy, Brunauer-Emmett-Teller method and scratch test were conducted to support the results. The DSSC with the $TiO_2$ film containing 3wt% low Tg glass frit showed optimal performance (5.1%, energy conversion efficiency) compared to the $TiO_2$-based one. The photocurrent density slightly decreased by adding 3wt% of the frit due to its large size and non conductivity. However, the decrease of current density followed by the decrease of electron transfer due to the large frit in $TiO_2$ electrode was compensated by the scattering effect, high surface area and reduced the electron transfer impedance at the electrolyte-dye-$TiO_2$ interface. The stability of the photo electrodes was improved by the frit, which chemically promoted the sintering of $TiO_2$ at relatively low temperature ($450^{\circ}C$).

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.143-146
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• 2005

A new method of x-ray photon correlation spectroscopy (XPCS) using coherent x-rays is developed recently for probing the dynamics of surface height fluctuations as a function of lateral length scale. This emerging technique applies the principles of dynamic light scattering in the x-ray regime. The short wavelength and slow time scales characteristic of XPCS extend the phase space accessible to scattering studies beyond some restrictions by light and neutron. In this paper, we demonstrate XPCS to study the dynamics of surface fluctuations in thin supported polymer films. We present experimental verification of the theoretical predictions for the wave vector and temperature dependence of the capillary wave relaxation times for the supported polymer films at melt for the film thicknesses thicker than 4 times of the radius of gyration of polymer. We observed a deviation from the conventional capillary wave predictions in thinner films. The analysis will be discussed in terms of surface tension, viscosity and effective interactions with the substrate.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.88-94
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• 2019

Triplet-triplet annihilation upconversion (TTA-UC) is a photochemical process wherein two or more low-energy photons are converted to a high-energy photon through a special energy transfer mechanism. Herein, we report a strategy to enhance the efficiency of TTA-UC through the light-scattering effect induced by silica microparticles (SM) embedded in polymeric thin films. By incorporating monodisperse uniform silica microparticles with a uniform size of 950 nm synthesized by $St{\ddot{o}}ber$-based seeded growth method into UC polymeric thin films, the UC intensity in the 430-570 nm range was enhanced by as much as 64% when irradiated by 635 nm laser. Analyzing the lifetime of PdTPBP phosphorescence revealed that the presence of SM in the UC layer does not affect triplet-triplet energy transfer (TTET) between sensitizers and acceptors, supporting the enhancement of TTA-UC originated from the light-scattering effect. On the other hand, the incorporation of SM in UC layer is shown to enhance the triplet-triplet annihilation (TTA) efficiency, which results in a 1.5-fold increase of the ${\Phi}_{UC}$, by scattering light source and thus increasing the number of excited photons to be utilized in TTA-UC process.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.38-43
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• 2011

We have developed a simple model of a bright-room contrast ratio (BRCR) measurement system for plasma display panels (PDPs) adopting a contrast enhancement film (CEF) by using an illumination design tool. Only four model parameters were used, namely, total ambient illumination power delivered by fluorescent lamps, a panel scattering rate, illuminance of PDP white patterns, and the absorption coefficient of a color adjusting film. These parameters were determined by simple optical measurements and matching simulations. The proposed model was employed to predict the BRCR values of four different CEF samples, and the simulated ones were found to be in agreement with measured ones within about 10% relative-error.

• Journal of Magnetics
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• v.4 no.4
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• pp.111-114
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• 1999

Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.

• Journal of Surface Science and Engineering
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• v.35 no.2
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• pp.107-112
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• 2002

We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.395-395
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• 2010

RIS(Reactive Ion Scattering)은 저 에너지 이온 빔을 쏘아 표면을 분석하는 방법이다. 분자 동력학 계산(MD simulation) 결과에 따르면 $Cs^+$이온은 두꺼운 얼음 표면에서 산란이 거의 일어나지 않는다. 본 연구에서는 이와 달리 Pt(111)과 Ru(0001) 표면에 생성시킨 두꺼운 얼음 표면에서 $Cs^+$이온 산란 실험이 가능함을 보였다. 한편, RIS signal은 얼음 층이 쌓인 구조나 두께에 따라 영향을 받는데, Ru(0001)과 Pt(111)의 표면에 생성시킨 crystalline water ice에서 시간과 water ice film의 두께가 RIS signal에 어떠한 영향을 미치는지도 조사하였다.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.