• 센서학회지
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• 제28권4호
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

• 한국터널지하공간학회 논문집
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• 제12권3호
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• pp.215-222
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• 2010

본 연구에서는 도로터널 화재 시 지하 및 지상 환기소의 방재 효율을 검토하기 위해 터널 축소모형실험을 실시하였다. 터널 모형은 Froude 상사를 기본으로 도로터널을 1/50로 축소하여 20 m의 모형 터널을 제작하였다. 방재 효율 분석에 적용된 연직갱은 설제 터널 설계시 고려된 두 가지 모형으로서 실터널 560, $280\;m^3/s$의 배연량을 1/50으로 상사하여 적용하였다. 결과로 모두 연직갱을 통한 CO 가스의 전량 배출이 가능한 것으로 분석되었다. 두 환기소의 CO 농도는 지상 환기소가 지하 환기소 보다 2.23~2.73 ppm 작게 배출되었다. 그리고 지상 환기소의 경우 터널 벽면의 냉각효과로 인해 화재 후 온도의 상승이 지하 환기소보다 $0.53{\sim}0.94^{\circ}C$ 낮게 나타났다. 이상의 축소모형 환기소 내 CO농도 및 온도변화의 분석 결과, 방재적인 측면에서 볼 때 도로터널 내 환기소의 위치는 지하보다 지상에 위치하는 것이 유리할 것으로 판단되었다.

• 한국항공우주학회지
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• 제49권9호
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• pp.801-811
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• 2021

낙뢰는 짧은 시간 동안 다량의 에너지를 항공기에 전달하여 치명적인 결과를 초래할 수 있다. 특히 낙뢰는 고온의 열과 전류를 동반하여 항공기 표면 손상과 내부 전자장비에 영향을 미쳐 비행의 안전에 심각한 영향을 미칠 수 있다. 이를 분석하기 위한 낙뢰 시험에는 미항공우주원고서 SAE ARP 5412B에 규정된 최대전류 200kA인 Component A 파형이 사용된다. 하지만 실제 낙뢰 크기는 대부분 35kA 내외로 발생하며 전기체 대상으로 하는 낙뢰 간접 시험에서 내부 전자장비 손상 예방을 위해 파형을 축소하여 시험을 진행한다. 본 연구에서는 기존 Component A 축소 파형을 도식화하는 방법을 알아보고 그 한계를 분석하였다. 나아가 항공기 낙뢰 Component A 파형의 보정계수를 조절하는 방식의 신규 축소 파형 도식 방법을 제안한다. 마지막으로 전자기 해석 소프트웨어 EMA3D를 활용하여 EC-155B 헬리콥터 내부 케이블 하네스의 파형 감소비에 따른 내부 유도 전류 크기 감소비를 비교하였다.

• Nuclear Engineering and Technology
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• 제41권5호
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• pp.691-708
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• 2009

In order to analyze thermal hydraulic phenomena during a DVI (Direct Vessel Injection) line break LOCA (Loss-of-Coolant Accident) in the APR1400 (Advanced Power Reactor 1400 MWe), we performed experimental studies with the SNUF (Seoul National University Facility), a reduced-height and reduce-pressure integral test loop with a scaled down APR1400. We performed experiments dealing with eight test cases under varied tests. As a result of the experiment, the primary system pressure, the coolant temperature, and the occurrence time of the downcomer seal clearing were affected significantly by the thermal power in the core and the SI flow rate. The break area played a dominant role in the vent of the steam. For our analytical investigation, we used the MARS code for simulation of the experiments to validate the calculation capability of the code. The results of the analysis showed good and sufficient agreement with the results of the experiment. However, the analysis revealed a weak capability in predicting the bypass flow of the SI water toward the broken DVI line, and it was insufficient to simulate the streamline contraction in the broken side. We, hence, need to improve the MARS code.

• Asian-Australasian Journal of Animal Sciences
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• 제29권8호
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• pp.1075-1082
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• 2016

Modern livestock production became highly intensive and large scaled to increase production efficiency. This production environment could add stressors affecting the health and growth of animals. Major stressors can include environment (air quality and temperature), nutrition, and infection. These stressors can reduce growth performance and alter immune systems at systemic and local levels including the gastrointestinal tract. Heat stress increases the permeability, oxidative stress, and inflammatory responses in the gut. Nutritional stress from fasting, antinutritional compounds, and toxins induces the leakage and destruction of the tight junction proteins in the gut. Fasting is shown to suppress pro-inflammatory cytokines, whereas deoxynivalenol increases the recruitment of intestinal pro-inflammatory cytokines and the level of lymphocytes in the gut. Pathogenic and viral infections such as Enterotoxigenic E. coli (ETEC) and porcine epidemic diarrhea virus can lead to loosening the intestinal epithelial barrier. On the other hand, supplementation of Lactobacillus or Saccharaomyces reduced infectious stress by ETEC. It was noted that major stressors altered the permeability of intestinal barriers and profiles of genes and proteins of pro-inflammatory cytokines and chemokines in mucosal system in pigs. However, it is not sufficient to fully explain the mechanism of the gut immune system in pigs under stress conditions. Correlation and interaction of gut and systemic immune system under major stressors should be better defined to overcome aforementioned obstacles.

• 터널과지하공간
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• 제8권2호
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• pp.107-117
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• 1998

In the case of a fire disaster in a uni-directional road tunnel, it is important to determine the critical ventilation velocity to prevent the backflow travelling toward the tunnel exit where vehicles are stopped. The critical ventilation velocity is horizontal velocity to prevent hot smoke from moving toward the tunnel exit. According to Froude modelling, the model tunnel whcih was 300mm in diameter and 21 m in length was made of acryl tubes. Inner section of acryl tubes was clothed with polycarbonate. 1/20 scaled model vehicles were installed to simulate the situation that vehicles are stopped in the tunnel exit. Methanol in a pool type burner was burned in the middle of tunnel to simulate a fire hazard. In this study, the basis of determining the critical ventilation velocity is the ventilation flow rate that is able to maintain the allowable CO concentration in the tunnel section. We assumed that the allowable CO concentration was backflow dispersion index. Futhermore, We intended to find out CO distribution and temperature distribution according as we changed ventilation velocity. The results of this study were that no backflow happened when ventilation velocity was 0.52 m/s in the case of 5.75 kW. If we adapt these results of a fire disaster releasing 10MW heat capacity in real tunnel which is 400m in length, no backflow happens when ventilation velocity is 2.31m/s. After we figured out dimensionless heat release rate and dimensionless ventilation velocity of model test and those of real test to verify experimental correctness, we tried to find out correlation between experimental results of model tunnel and those of real tunnel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).