• Analytical Science and Technology
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• v.21 no.5
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• pp.397-402
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• 2008

Uranium dioxide was dissolved with nitric acid and a trace amount of HF. The analytical conditions of a spectrophotometer were investigated to determine a trace amount of silicon in the uranium matrices without a separation process. The effects of a trace amount of HF on the determination of silicon were examined. Boric acid was used to eliminate HF the interference in the colorimetric process. The recovery of silicon in the presence of a trace amount of HF in uranium solutions with or without saturated boric acid was $103.3{\pm}0.8$ and $76.6{\pm}6.8%$, respectively. The amount of saturated boric acid did not affect the recovery of the silicon. Therefore it was possible for this procedure to measure a trace amount of silicon in a uranium matrix without a separation by a UV-VIS spectrophotometry.

• Corrosion Science and Technology
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• v.12 no.2
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• pp.85-92
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• 2013

This work is concerned with an evaluation of dynamic boric acid corrosion (BAC) of low alloy steel for reactor pressure vessel of a pressurized water reactor (PWR). Mockup test method was newly established to investigate dynamic BAC of the low alloy steel under various conditions simulating a primary water leakage incident. The average corrosion rate was measured from the weight loss of the low alloy steel specimen, and the maximum corrosion rate was obtained by the surface profilometry after the mockup test. The corrosion rates increased with the rise of the leakage rate of the primary water containing boric acid, and the presence of oxygen dissolved in the primary water also accelerated the corrosion. From the specimen surface analysis, it was found that typical flow-accelerated corrosion and jet-impingement occurred under two-phase fluid of water droplet and steam environment. The maximum corrosion rate was determined as 5.97 mm/year at the leakage rate of 20 cc/min of the primary water with a saturated content of oxygen within the range of experimental condition of this work.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.414-418
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• 1999

Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.