• Journal of Korean Philosophical Society
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• v.123
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• pp.165-187
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• 2012

Our freedom is natural, however we are amazed at the fact that we don't sometimes have the freedom. we have to have a freedom and must be a freedom. But we think our life is restrained. Why do we think that? This is due to epistemological thinking. Also critic of Sartre' freedom is due to that. Especially Merleau-Ponty's researchers say that Sartre is an epistemologist on the problem of the freedom and his freedom is an absolute freedom. Aim of this paper is to find out problem of the critic. To achieve this, first we need to exmaine what absoulte freedom is. It is abstract and ideological. According to Merleau-Ponty, it dosen't exist. This paper argues that Sartre's freedom is not epistemoligical but ontological. It is going to come out in relation between '$l^{\prime}{\hat{e}}tre-en-soi$' and '$l^{\prime}{\hat{e}}tre-en-soi$'. Then, on the problem of the freedom, we can discover that Sartre and Merleau-Ponty are no different from each other. Finally, As I argue about Merleau-Ponty's freedom, I will show that it is 'a freedom of situation' and 'a freedom of choice'. Also, This freedom is Sartre's freedom. Sartre showes a situation is my freedom.

• Water Engineering Research
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• v.2 no.2
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• pp.139-148
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• 2001

The teleconnections between El Nino/Southern Oscillation (ENSO) and droughts in Korea and the continental United States(U.S.) are investigated using cross analysis. For this purpose, monthly ENSO data and Palmer Drought Severity Index (PDSI) for Korea and for seven states in the U.S. are used. This study shows that there are significant statistical associations between ENSO indices and PDSI for Korea; however, the associations are very weak. It is found that dry conditions in Korea are positively correlated with El Nino, while wet conditions with La Nina. SOI, SSt in the Nino 4 and Ship track 6 regions among ENSO indices are more strongly correlated with PDSI than the other ENSO indices when using the original standardized data, but the SST Nino 3, SST Nino 4, and Darwin SSP exhibit abetter correlations with PDSI when using filtered data to be removed autocorrelation components of the original standardized data. The response time lag for maximum correlation between ENSO indices and PDSI appears to be affected by filtering the data. This is expecially true for Korea than for state analyzed in U.S. In addition, it is found that the PDSI in the continental U.S. is more strongly correlated wiht ENSO than in Korea. Furthermore, in analyzing the El Nino and La Nina aggregate composite data, it is found that the dry anomalies in Korea occur from the year following El Nino to about tow years after while the wet anomalies occur from La Nina year for a period of about two years.

• Journal of Power System Engineering
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• v.3 no.4
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• pp.57-62
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• 1999

The microaccelerometer using a tunnelling current effect concept has the potential of high performance, although it requires slightly complex signal-processing circuit for servo-system. The paddle of micro accelerometer is pulled to have the gap width of about 2nm which almost allows the flow tunnelling current. This paper demonstrates at capacitor of microaccelerometer the use of the coupled thermo-electric analysis for voltage, current, heat flux and Joule heating then tunnelling current flows. Two electrodes are applied to the microaccelerometer producing a unform difference of temperature gradient and electric potential between the paddle and the substrate.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.291-294
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• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.308-311
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• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1057-1060
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• 2003

This paper is about the optimized fabricated parameter in the EDMOSFET(Extended drain MOSFET) with a various temperature. As we know, the two important factors of EDMOSFET parameters are breakdown voltage and on Resistance. So, we have aims of the power EDMOSFET design to have high breakdown voltage and low on resistance. Thus in this paper, we will show the figure of merit in LDMOS (BV/Ron) in accordance with increase in temperature(300K-500K, step:50K), and measure electronic characteristics of power EDMOSFET. As a result, the important factors in design of EDMOS are temperature and Lg.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• Journal of Power System Engineering
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• v.5 no.1
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• pp.73-79
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• 2001

정전기력을 이용하는 마이크로가속도계 센서는 단결성 실리콘 SOI(Silicon On Insulator) 웨이퍼의 기판에 절전재료 적층과 등방성 및 이방성 부식공정으로 제작한다. 마이크로가속도 센서 개발에는 3차원 미소구조체의 제작공정에서 가열 및 냉각공정의 온도구배로 야기되는 포핑업과 같은 열변형 해석이 최적 형상설계에 중요한 요건이다. 본 연구에서는 양자역학적 현상인 턴널링전류 원리로 승용차 에어백의 검침부 역할을 하는 마이크로가속도 센서의 제조공정에서 소착현상을 방지하는 부가 비임과 턴널갭의 FIB 절단가공과 백금 적층공정의 열적 거동을 해석한다. 마이크로머시닝 공정에서 온도의존성을 고려하여 연성해석하고 유한요소법의 상용코드인 MARC K6.1로 분석한 결과를 단결정 실리콘 웨이퍼로 가공하는 마이크로가속도 센서의 최적공정 및 형상설계를 위한 기초자료로 활용될 수 있을 것으로 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.692-696
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• 2005

In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).

• Proceedings of the Korea Water Resources Association Conference
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• 2022.05a
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• pp.8-12
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• 2022

Water loss is one of the typical but challenging problems in water management. To reduced water loss or increase water efficiency, the pilot projects were implemented in the TTD's irrigation area. Modern soil moisture technology and local level water user training were conducted together as a mean to achieve improved water efficiency. In terms of technology, soil moisture sensors and monitoring system were used to estimate crop water requirement to reduce unnecessary irrigation. This was found to save 16.47% of irrigated water and 25.20% of irrigation supply. Further improvement of water efficiency was gained by means of local level water user training in which stakeholders were engaged in the network of communications and co-planning. The lessons learnt from the TTD pilot project was translated into good water management practices at local level.