• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.95-102
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• 2001

Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$〉$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.21-28
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• 2007

In this paper, in order to derive the two-dimensional field effect of n-InAlAs/InGaAs HEMTs, we suggested analytical model by solving the two-dimensional Poisson's equation in both InAlAs and InGaAs regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing within the quantum well shaped channel. Derived expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the threshold voltage decreases as drain voltage increases. Compared with the conventional model, the present model may offer more reasonable explanation for the drain-induced threshold voltage roll-off, the Early effect, and the channel length modulation effect. Furthermore, it is expected that the proposed model would provide more reasonable theoretical basis for analyzing various long and short channel InAlAs/InGaAs HEMT devices.

• The Journal of the Acoustical Society of Korea
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• v.33 no.3
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• pp.184-190
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• 2014

Although it is ideal that the sound with the range of 20 ~ 20,000 Hz is produced by the loudspeaker system composing of only one loudspeaker unit, it is almost impossible now. Therefore, the audible frequency range is now produced by the loudspeaker system, which is consisted of more than two loudspeaker units. The multi-way loudspeaker system certainly requires a crossover filter, which is divided the audible frequency into low and high frequency ranges. The crossover frequency of filter usually is in the range of 1 ~ 4 kHz, the frequency range can largely affect to the sound articulation and quality. It is an example that the phase and amplitude at the crossover frequency can be different from each other, due to the variously reasons. Conversely, they can not produce the smooth frequency response due to the different distance between the two loudspeaker units and electrical properties. As a result, the sound articulation and quality can be degraded. Therefore, the phase and amplitude response at the crossover frequency has to be deeply considered, in order to exactly match the woofer and tweeter. In this study, it is proposed the methods which are the flat frequency and phase response to be obtained by adjusting of the delay time between loudspeaker units, and the choice of filter to be considered the roll-off properties of each unit. It is achieved the frequency response with ${\pm}1$ dB, and the sound articulation is also improved.

• Journal of Biomedical Engineering Research
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• v.34 no.1
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• pp.8-13
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• 2013

Persons with sensorineural hearing impairment have troubles in hearing at noisy environments because of their deteriorated hearing levels and low-spectral resolution of the auditory system and therefore, they use hearing aids to compensate weakened hearing abilities. Various algorithms for hearing loss compensation and environmental noise reduction have been implemented in the hearing aid; however, the performance of these algorithms vary in accordance with external sound situations and therefore, it is important to tune the operation of the hearing aid appropriately in accordance with a wide variety of sound situations. In this study, a sound classification algorithm that can be applied to the hearing aid was suggested. The proposed algorithm can classify the different types of speech situations into four categories: 1) speech-only, 2) noise-only, 3) speech-in-noise, and 4) music-only. The proposed classification algorithm consists of two sub-parts: a feature extractor and a speech situation classifier. The former extracts seven characteristic features - short time energy and zero crossing rate in the time domain; spectral centroid, spectral flux and spectral roll-off in the frequency domain; mel frequency cepstral coefficients and power values of mel bands - from the recent input signals of two microphones, and the latter classifies the current speech situation. The experimental results showed that the proposed algorithm could classify the kinds of speech situations with an accuracy of over 94.4%. Based on these results, we believe that the proposed algorithm can be applied to the hearing aid to improve speech intelligibility in noisy environments.

• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.469-475
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• 2005

An integrated photonic microwave bandpass filter has been proposed and demonstrated incorporating a coherently coupled microring resonator in low-loss polymers. The proposed device may feature compact site, simple structure, tuning via the thermooptic and electrooptic effect, and flexible integration with other electrical and optical devices. The resonator was designed to have an extremely small bandwidth so that it could be used to selectively pass the optical signal carrying the microwave signal to attain efficient bandpass filtering. We made and tested two resonators with a single ring and double rings, and performed a theoretical fitting of their measured transfer curves to predict the performance of the microwave filters based on them precisely. It was found that as the number of the rings used for the resonator increases, the bandwidth gets smaller, the rolloff sharper, and the band rejection higher. Finally our filter exhibited the center frequency of 10GHz, the 3-dB bandwidth of 1.0GHz, the corresponding quality (Q) factor of 10, and the rejection outside of the passband of more than 25dB.